APT33GF120BR
052-6206 Rev D 3-2003
MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop • Ultra Low Leakage Current
• Low Tail Current
• RBSOA and SCSOA Rated
• High Freq. Switching to 20KHz
MIN TYP MAX
1200
4.5 5.5 6.5
2.7 3.2
3.3 3.9
0.5
5.0
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA)
Gate Threshold Voltage (VCE = VGE, IC = 700µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C)
Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V)
Symbol
BVCES
VGE(TH)
VCE(ON)
ICES
IGES
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
UNIT
Volts
mA
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
APT33GF120BR
1200
1200
±20
52
33
104
66
65
297
-55 to 150
300
APT33GF120BR
1200V 52A
TO-247
GCE
G
C
E
Symbol
VCES
VCGR
VGE
IC1
IC2
ICM
ILM
EAS
PD
TJ,TSTG
TL
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (RGE = 20KΩ)
Gate Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 105°C
Pulsed Collector Current 1 @ TC = 25°C
RBSOA Clamped Inductive Load Current @ RG = 11Ω TC = 125 °C
Single Pule Avalanche Energy 2
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
UNIT
Volts
Amps
mJ
Watts
°C
Fast IGBT
APT33GF120BR
052-6206 Rev D 3-2003
Symbol
Cies
Coes
Cres
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
gfe
DYNAMIC CHARACTERISTICS (IGBT)
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Test Conditions
Capacitance
VGE = 0V
VCE = 25V
f = 1 MHz
Gate Charge
VGE = 15V
VCC = 0.5VCES
IC = IC2
Resistive Switching (25°C)
VGE = 15V
VCC = 0.8VCES
IC = IC2
RG =10Ω
Inductive Switching (150°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10Ω
TJ = +150°C
Inductive Switching (25°C)
VCLAMP(Peak) = 0.66VCES
VGE = 15V
IC = IC2
RG = 10Ω
TJ = +25°C
VCE = 20V, IC = 25A
MIN TYP MAX
1855
230
110
170
19
100
24
85
170
125
25
60
210
74
2.8
2.8
5.6
27
65
190
70
5.2
8.5 20
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
1Repetitive Rating: Pulse width limited by maximum junction temperature.
2IC = IC2, VCC = 50V, RGE = 25Ω, L = 120µH, Tj = 25°C
3See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
UNIT
°C/W
oz
gm
MIN TYP MAX
0.42
40
0.22
5.90
Characteristic
Junction to Case
Junction to Ambient
Package Weight
Symbol
RΘJC
RΘJA
WT
APT33GF120BR
052-6206 Rev D 3-2003
C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES)
TC =+25°C
TJ =+150°C
SINGLE PULSE
250µSec. Pulse Test
VGE = 15V
IC = IC2
TJ = +25°C
f = 1MHz
8V
Cies
Cres
10V
9V
7V
Coes
VGE=17, 15 & 13V
TC=-55°C
TC=+150°C
OPERATION
LIMITED
BY
VCE (SAT)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C) Figure 2, Typical Output Characteristics (TJ = 150°C)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V Figure 4, Maximum Forward Safe Operating Area
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage Figure 6, Gate Charges vs Gate-To-Emitter Voltage
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
VCE=240V
60
40
20
0
80
60
40
20
0
3,000
1,000
100
10
TC=+25°C
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
0.05
D=0.5
0.2
0.01
SINGLE PULSE
ZθJC, THERMAL IMPEDANCE (°C/W)
0.1
0.02
0.5
0.1
0.05
0.01
0.005
0.001
0 4 8 12 16 20 0 4 8 12 16 20
0 2 4 6 8 1 10 100 1200
.01 0.1 1.0 10 50 0 50 100 150 200 250
10-5 10-4 10-3 10-2 10-1 1.0 10
60
40
20
0
100
10
1
20
16
12
8
4
0
VCE=960V
VCE=600V
11V
12V
8V
10V
9V
7V
VGE=17, 15 & 13V
11V
12V
100µs
1ms
10ms
APT33GF120BR
052-6206 Rev D 3-2003
VCC = 0.66 VCES
VGE = +15V
TJ = +25°C
IC = IC2
VCC = 0.66 VCES
VGE = +15V
TJ = +125°C
RG = 10 Ω
VCC = 0.66 VCES
VGE = +15V
RG = 10 Ω
IC1
0.5 IC2
IC2
IC1
Eon
Eoff
Eon
Eoff
0.5 IC2
IC2
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature Figure 9, Maximum Collector Current vs Case Temperature
TJ, JUNCTION TEMPERATURE (°C) RG, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature Figure 11, Typical Switching Energy Losses vs Gate Resistance
TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature Figure 13, Typical Switching Energy Losses vs Collector Current
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
-50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100
-50 -25 0 25 50 75 100 125 150 0 10 20 30 40
0.1 1.0 10 100 1000
60
40
20
0
16
12
8
4
0
4
3
2
1
0
For Both:
Duty Cycle = 50%
TJ = +125°C
Tsink = +90°C
Gate drive as specified
Power dissapation = 83W
ILOAD = IRMS of fundamental
IC, COLLECTOR CURRENT (AMPERES) TOTAL SWITCHING ENERGY LOSSES (mJ) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VCE(SAT), COLLECTOR-TO-EMITTER
VOLTAGE (NORMALIZED) SATURATION VOLTAGE (VOLTS)
SWITCHING ENERGY LOSSES (mJ) SWITCHING ENERGY LOSSES (mJ) IC, COLLECTOR CURRENT (AMPERES)
5.0
4.0
2.0
1.5
1.0
1.2
1.1
1
0.9
0.8
0.7
20
1
0.1
100
10
1
APT33GF120BR
052-6206 Rev D 3-2003
T0-247 Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Collector
Collector
Emitter
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
*DRIVER SAME TYPE AS D.U.T.
V
CC
= 0.66 V
CES
E
ts
= E
on
+ E
off
V
CE
(on)
t
d
(off)
t
d
(on) t
f
t
r
1
Figure 15, Switching Loss Test Circuit and Waveforms
Figure 16, Resistive Switching Time Test Circuit and Waveforms
2
V
CC
R
G
R
L
=
.5 V
CES
I
C2
10%
90%
V
GE
(on)V
CE
(off)
V
GE
(off)
2
1
From
Gate Drive
Circuitry
D.U.T.
B
I
C
I
C
90%
10%
90%
10%
10%
90%
E
off
t
f
t
d
(off)
t
d
(on)
t
r
E
on
I
C
V
CLAMP
100uH
V
CHARGE
A
A
B
D.U.T.
DRIVER*
V
C
A
R
G
V
C
V
C
D.U.T.
V
CE
(SAT)
t=2us
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
