2N3632 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N3632 is Designed for Class A,B,C Amplifier, Oscillator and Driver Applications Covering 130 to 400 MHz. PACKAGE STYLE TO- 60 FEATURES INCLUDE: * Emitter Ballasted * Common Emitter Package MAXIMUM RATINGS IC 3.0 A VCE 40 V PDISS 23 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C JC O O O O O O 1 = EMITTER 3 = COLLECTOR 7.6 C/W CHARACTERISTICS 2 = BASE CASE = EMITTER O TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS 40 V 65 V 65 V BVCEO IC = 200 mA BVCEX IC = 200 mA BVCBO IC = 500 A ICEO VCE = 30 V 250 A IEBO VEB = 4.0 V 250 A hFE VCE = 5.0 V Cob VCB = 30 V ft VCE = 28 V Pout GP C VCE = 28 V VBE = -1.5 V IC = 1.0 A --- 5.0 f = 1.0 MHz IC = 150 mA 20 f = 100 MHz f = 175 MHz 400 13.5 5.8 70 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. pF MHz W dB % REV. A 1/1