international Rectifier PD-9.373H IRF540 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated . D *@ 175C Operating Temperature Fast Switching Ease of Paralleling @ Simple Drive Requirements Voss = 100V Rpsion) = 0.0770 Ip = 28A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings TO-220AB Parameter Max. Units lp @ To = 25C Continuous Drain Current, Vas @ 10 V 28 lo @ Tc = 100C | Continuous Drain Current, Ves @ 10 V 20 A lpm Pulsed Drain Current @ 110 Pp @ Tc =25C | Power Dissipation 150 Ww Linear Derating Factor 1.0 Were Ves Gate-to-Source Voltage +20 Vv Eas Single Pulse Avalanche Energy 230 md lar Avalanche Current 28 A Ear Repetitive Avalanche Energy 15 mJ dv/dt Peak Diode Recovery dv/dt @ 5.5 Vins Ty Operating Junction and -55 to +175 Tsta Storage Temperature Range C Soidering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibfein (1.1 Nem) Thermal Resistance Parameter Min. Typ. Max. Units Rac Junction-to-Case _ _ 1.0 Recs Case-to-Sink, Flat, Greased Surface 0.50 _ CW Resa Junction-to-Ambient _ _ 62 149IRF540 Electrical Characteristics @ Ty = 25C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Vierjoss Drain-to-Source Breakdown Voltage 100 _ _ V__| Vas=0V, Ip= 250uA AVeryoss/ATy| Breakdown Voltage Temp. Coefficient | 0.13 | | V/C | Reference to 25C, Ip= imA Ros(on) Static Drain-to-Source On-Resistance [0.077] Q |Ves=tOV, lp=17A @ Vasith) Gate Threshold Voltage 2.0 _ 4.0 V__| Vos=Ves, Ipb= 250A Ots Forward Transconductance 8.7 _ _ S| Vps=50V, lp=17A @ Ipss Drain-to-Source Leakage Current ca HA Vos=100V, Vas=0V _ _ 250 Vps=80V, Vas=0V, Ty=150C lass Gate-to-Source Forward Leakage _ | 100 nA Ves=20V Gate-to-Source Reverse Leakage _ | -100 Vaes=-20V Qg Total Gate Charge . _ = 72 Ip=17A Qgs Gate-to-Source Charge | | 11 | nC | Vos-80v Qoa Gate-to-Drain ("Miller") Charge _ _ 32 Vas=10V See Fig. 6 and 13 @ ta(on) Turn-On Delay Time | 11 ~~ Vop=50V tr Rise Time _ 44 _ ns Ip=17A tutor) _ | Turn-Off Delay Time 53 a Re=9.10 ti Fail Time 43 _ Ro=2.9Q See Figure 10 @ Lb Internal Drain Inductance _ 45 _ e mm (0. goad ) nH | from package fia Ls Internal Source Inductance | 75] and center of die contact 8 Ciss Input Capacitance | 1700} Vas=0V Coss Output Capacitance | 540 ]/ PF | Vpg=25V Crss Reverse Transfer Capacitance _ 120; f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter Min. | Typ. | Max. | Units Test Conditions ls Continuous Source Current _ _ 28 MOSFET symbol D (Body Diode) A showing the isu Pulsed Source Current _ _ 440 integral reverse a (Body Diode) p-n junction diode. $ Vsp Diode Forward Voltage _ _ 2.5 Vi | Ty=25C, Ig=28A, Vas=0V tr Reverse Recovery Time _ 180 | 360 ns | Ty=25C, tp=17A Qr Reverse Recovery Charge | 13 1 28 | uC jdi/dt=100A/Is @ ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp) Notes: @ Repetitive rating; pulse width limited by Isps28A, di/dt<170A/us, Vop<Viaaypss, max. junction temperature (See Figure 11) Tys175C Vpp=25V, starting Tj=25C, L=440nH Pulse width < 300 ps; duty cycle <2%. Ra=25Q, las=28A (See Figure 12) 150Ip, Drain Current (Amps) ip, Drain Current (Amps) 20us WIDTH Te = 26C to-t 404 Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25C Vos = 50V 20us PULSE WIDTH Vas, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Rpscon), Drain-to-Source On Resistance Ip, Drain Current (Amps) (Normalized) IRF540 20us WIOTH Te = 175C 107 Vps, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=175C Veg = 10 255 1 Ty, Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature 151IRF540 | t= Cgs + fgg Cas at ga 2400 Cas + 1800 1200 Capacitance (pF) 600 Ves, Gate-to-Source Voltage (volts) Crgg FIGURE 13 10 Vos, Drain-to-Source Voltage (volts) Qe, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs: Drain-to-Source Voltage Gate-to-Source Voltage 108 OPERATION IN THIS AREA LIMITED g 5 BY os (oN) e < g 2 3 ~ | 3 & o Cc 2 10 $ a os 4 T, - 2 Tj=1750C 4 Ves = OV SINGLE OO) : 4 6 012 5 4 2 5 49 2 5 422 5 432 5 404 Vsp, Source-to-Drain Voltage (volts) Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 162lp, Drain Current (Amps) IRF540 Vos WA D.U.T. K "Vop \Ft0Vv Pulse Width < tps Duty Factor < 0.1% L es 50 75 100 125 150 175 Me To, Case Temperature (C) taon) tr tao te Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 10 Thermat Response (Ze jc} 0.4 FS Pow it eel SINGLE PULSE NOTES: (THERMAL RESPONSE) 4. DUTY FACTOR, D=t41/t2 2. PEAK Tj=Ppm % Zthjc + Te 40 105 1074 103 10? 0.4 1 10 ty, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 153IRF540 | Vary tp to obtain Vps> required las 600 > 500 E > a 400 oO Cc Lu / . it 2 300 Fig 12a. Unclamped Inductive Test Circuit 2 ao 3 200 * 100 Ww = 25V Vos 0 25 50 75 100 425 150 4175 Starting Ty, Junction Temperature(C) as -7-T Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Current Regulator J 8 < z a an Oo & uF io 2 Gay ) As 10V Ve ig = | Charge Current Sampling hesietors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing See page 1509 Appendix C: Part Marking Information - See page 1516 International Appendix E: Optional Leadforms - See page 1525 Rectifi er 154