Transistor 2SD0966 (2SD966) Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.90.2 4.90.2 Absolute Maximum Ratings (Ta=25C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V Peak collector current ICP 8 A Collector current IC 5 A Collector power dissipation PC 1 W Junction temperature Tj 150 C Storage temperature Tstg -55 ~ +150 C Electrical Characteristics 0.70.1 0.7+0.3 -0.2 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. 13.50.5 0.45+0.2 -0.1 0.45+0.2 -0.1 (1.27) (1.27) 1 2 3 (3.2) 8.60.2 Features 2.540.15 1:Emitter 2:Collector 3:Base EIAJ:SC-51 TO-92L-A1 Package (Ta=25C) Symbol Parameter Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 A Emitter cutoff current IEBO VEB = 7V, IC = 0 0.1 A Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10A, IC = 0 7 V hFE1 Forward current transfer ratio *1 VCE = 2V, IC = 0.5A*2 hFE2 VCE = 2V, IC = 2A*2 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.1A*2 Transition frequency fT VCB = 6V, IE = -50mA, f = 200MHz Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz 230 600 150 1 150 50 *2 *1h FE1 V MHz pF Pulse measurement Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 Note.) The Part number in the Parenthesis shows conventional part number. 570 2SD0966 Transistor PC -- Ta IC -- VCE 1.2 IC -- VBE 2.4 6 VCE=2V IB=7mA 2.0 0.8 0.6 0.4 0.2 6mA 1.6 5mA 4mA 1.2 3mA 0.8 2mA 0.4 0 40 60 80 100 120 140 160 Ambient temperature Ta (C) 0.4 1 Ta=75C 25C -25C 0.1 0.03 0.01 0.003 0.1 0.3 0.8 1.2 1.6 2.0 2 2.4 0 1 3 10 Collector current IC (A) 0.4 0.8 1.2 1.6 2.0 Base to emitter voltage VBE (V) fT -- I E 600 400 VCB=6V Ta=25C VCE=2V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 3 0.001 0.01 0.03 3 hFE -- IC IC/IB=30 0.3 4 Collector to emitter voltage VCE (V) VCE(sat) -- IC 10 -25C 0 0 Transition frequency fT (MHz) 20 Ta=75C 1 1mA 0 0 25C 5 Collector current IC (A) 1.0 Collector current IC (A) Collector power dissipation PC (W) Ta=25C 500 400 Ta=75C 300 25C -25C 200 100 350 300 250 200 150 100 50 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Emitter current IE (A) Cob -- VCB Collector output capacitance Cob (pF) 100 IE=0 f=1MHz Ta=25C 80 60 40 20 0 1 3 10 30 100 Collector to base voltage VCB (V) 571 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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