2 Motorola Bipolar Power Transistor Device Data
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ELECTRICAL CHARACTERISTICS (TC = 25
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C unless otherwise noted)
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Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0) MJ15023
MJ15025
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Collector Cutoff Current
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc) MJ15023
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc) MJ15025
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Collector Cutoff Current
(VCE = 150 Vdc, IB = 0) MJ15023
(VCE = 200 Vdc, IB = 0) MJ15025
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Emitter Cutoff Current
(VCE = 5 Vdc, IB = 0) Both
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Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 0.5 s (non–repetitive))
(VCE = 80 Vdc, t = 0.5 s (non–repetitive))
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DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
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Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
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Base–Emitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)
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Current–Gain — Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
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Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
pF
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
v
2%.
100
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.5 10 1 k
20
TC = 25
°
C
50 250
0.1
IC, COLLECTOR CURRENT (AMPS)
0.2
1.0
5.0
50
500100
10
20
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the powerhandling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200
_
C; TC is
variable depending on conditions. At high case temper-
atures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.