TSM2N7000K
60V N-Channel MOSFET
1/6
Version: B12
TO
-
92
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω) I
D
(mA)
60 5 @ V
GS
= 10V 100
5.5 @ V
GS
= 5V 100
Features
● Low On-Resistance
● ESD Protection
● High Speed Switching
● Low Voltage Drive
Ordering Information
Part No. Package
Packing
TSM2N7000KCT B0 TO-92 1Kpcs / Bulk
TSM2N7000KCT A3 TO-92 2Kpcs / Ammo
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
60 V
Gate-Source Voltage V
GS
±20 V
Drain Current Continuous @ T
A
=25ºC
I
D
300 mA
Pulsed I
DM
700
Drain Reverse Current Continuous @ T
A
=25ºC
I
DR
300 mA
Pulsed I
DMR
700
Maximum Power Dissipation P
D
400 mW
Operating Junction Temperature T
J
+150
o
C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150
o
C
Thermal Performance
Parameter Symbol Limit Unit
Lead Temperature (1/8” from case) T
L
10 S
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
357 ºC/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
Block Diagram
N-Channel MOSFET
Pin
Definition
:
1. Source
2. Gate
3. Drain
TSM2N7000K
60V N-Channel MOSFET
2/6
Version: B12
Electrical Specifications
(Ta = 25
o
C, unless otherwise noted)
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 10µA BV
DSS
60 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250µA V
GS(TH)
1.0 -- 2.5 V
Gate Body Leakage V
GS
= ±20V, V
DS
= 0V I
GSS
-- -- ±10 uA
Zero Gate Voltage Drain Current V
DS
= 60V, V
GS
= 0V I
DSS
-- -- 1.0 uA
Drain-Source On-State Resistance V
GS
= 10V, I
D
= 100mA R
DS(ON)
-- 3 5 Ω
V
GS
= 5V, I
D
= 100mA -- 3.6 5.5
Forward Transconductance V
DS
= 10V, I
D
= 200mA g
fs
100 -- -- mS
Diode Forward Voltage I
S
= 300mA, V
GS
= 0V V
SD
-- 0.9 1.2 V
Dynamic
b
Total Gate Charge V
DS
= 10V, I
D
= 250mA,
V
GS
= 4.5V
Q
g
-- 0.4 -- nC
Input Capacitance V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 7.32 --
pF
Output Capacitance C
oss
-- 3.42 --
Reverse Transfer Capacitance C
rss
-- 7.63 --
Switching
c
Turn-On Delay Time V
DD
= 30V, R
G
= 10Ω
I
D
= 100mA, V
GEN
= 10V,
t
d(on)
-- 25 -- nS
Turn-Off Delay Time t
d(off)
-- 35 --
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
TSM2N7000K
60V N-Channel MOSFET
3/6
Version: B12
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Forward Transfer Admittance vs. Drain Current
On-Resistance vs. Gate-Source Voltage
Power Derating Curve
TSM2N7000K
60V N-Channel MOSFET
4/6
Version: B12
TO-92 Mechanical Drawing
Marking Diagram
Y
= Year
Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
TO-92 DIMENSION
DIM
MILLIMETERS INCHES
MIN MAX MIN MAX
A 4.30 4.70 0.169 0.185
B 4.30 4.70 0.169 0.185
C 13.53 (typ) 0.532 (typ)
D 0.39 0.49 0.015 0.019
E 1.18 1.28 0.046 0.050
F 3.30 3.70 0.130 0.146
G 1.27 1.31 0.050 0.051
H 0.33 0.43 0.013 0.017
TSM2N7000K
60V N-Channel MOSFET
5/6
Version: B12
TO-92 Ammo Pack Mechanical Drawing
TSM2N7000K
60V N-Channel MOSFET
6/6
Version: B12
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
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