1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP
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Revision: 11-Dec-13 1Document Number: 88513
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Junction Plastic Rectifier
FEATURES
Superectifier structure for high reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current
High forward surge capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters, and freewheeling diodes application.
MECHANICAL DATA
Case: DO-204AC, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Note
(1) JEDEC® registered values
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 200 V, 400 V, 600 V, 800 V
IFSM 50 A
IR5.0 μA
VF1.2 V
TJ max. 175 °C
Package DO-204AC (DO-15)
Diode variations Single die
DO-204AC (DO-15)
SUPERECTIFIER
®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNIT
Maximum repetitive peak reverse voltage VRRM (1) 200 400 600 800 V
Maximum RMS voltage VRMS 140 280 420 560 V
Maximum DC blocking voltage VDC (1) 200 400 600 800 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 75 °C IF(AV) (1) 1.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM (1) 50 A
Maximum full load reverse current, full cycle
average 0.375" (9.5 mm) lead length at
TA = 25 °C IR(AV) (1) 5.0 μA
TA = 75 °C 150
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP
www.vishay.com Vishay General Semiconductor
Revision: 11-Dec-13 2Document Number: 88513
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) JEDEC registered values
Note
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNIT
Max. instantaneous forward voltage 1.0 A TA = 75 °C VF (1) 1.2 V
Maximum DC reverse current at rated
DC blocking voltage
TA = 25 °C IR (1) 5.0 μA
TA = 175 °C 300
Typical reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 2.0 μs
Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP UNIT
Typical thermal resistance RJA (1) 45 °C/W
RJL (1) 20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N5061GP-E3/54 0.425 54 4000 13" diameter paper tape and reel
1N5061GP-E3/73 0.425 73 2000 Ammo pack packaging
1N5061GPHE3/54 (1) 0.425 54 4000 13" diameter paper tape and reel
1N5061GPHE3/73 (1) 0.425 73 2000 Ammo pack packaging
0
25 50 75 100 125 150 175 200
0.2
0.4
0.6
0.8
1.0
Average Forward Rectied Current (A)
Ambient Temperature (°C)
60 Hz
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
1 10 100
10
20
30
40
50
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
A
= 100 °C
8.3 ms Single Half Sine-Wave
(JEDEC Method)
1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP
www.vishay.com Vishay General Semiconductor
Revision: 11-Dec-13 3Document Number: 88513
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
0
0.01
0.1
1
10
60 80 10020 40
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
TJ = 125 °C
TJ = 25 °C
TJ = 75 °C
100
1
10
100
Reverse Voltage (V)
110
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)
0.01 0.1 101 100
0.1
10
100
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
DIA.
0.140 (3.6)
0.104 (2.6)
DIA.
1.0 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
MIN.
Legal Disclaimer Notice
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Revision: 13-Jun-16 1Document Number: 91000
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