12. MISCELLANEOUS DIODES IN ORDER OF (1) USE and {2) TYPE No. 12) Y DESCRIPTIO LINE TYPE U DWE. | TECHNICAL DATA No. No. S | MAT No | ! \E : ' | 1 TVABT612AN29 19 1Si8 'S396b Mulitplier Diode;VB 160V min;Cj 5.0-8-OpF at 6.0V;Carrier Lifetime 150ns min 2 'VAB1613AN24 19 |Si8 IF116 Multiplier Diode;VB 120V min;Cj 3.0-5.0pF at 6.0V;Carrier Lifetime 100ns typ 3. VAB1613AN26 19 |Si iF49b Multiplier Diode; VB _120V_ min;Cj 3.0-5.OpF at 6.0V:Carrier Lifetime 100ns min 4 [VAB1613AN28 19 /Si8 FS9h Multiplier Diode;VB 120V min;Cj 3.0-5.0pF at 6.0V;Carrier Lifetime 100ns min 5 +VAB1613AN29 119 |Si8 S396b Multiplier Diode: VB 120V min;Cj 3.0-5.0pF at 6.0V;Carrier Lifetime 100ns min 6 |VAB1614AN20 19 [Sis |F27as iMultiplier Diode; VB 100V_ min;Cj 1.5-3.0pF at 6.0V;Carrier Lifetime 60ns min 7 VAB1614AN22 )19'Sis Fi02c {Multiplier Diode;VB TOOV min;C) 1.5-3.0pF Carrier Lifetime 6Ons min 8 VAB1616AN20 19 Sis F27as Multiplier Diode:VB 80V min;Cj 1.0-1.5pF;Carrier Lifetime 30ns min 9 'VAB1616AN22 19 | Sis F102c | Multiplier Diode:;VB_80V_min;C) 1.0-1.5pF;Carrier Lifetime 30ns_min 10 VAB1625N20 19 /Sis F27as Multiplier Diode;VB 7OV min;Cj 1.0-1.5pF;Carrier Lifetime 20ns min 11. 'VAB1625N22 19 |Si8 F102c Multiplier Diode;VB 7OV min;Cj 1.0-1.5pF;Carrier Lifetime 20ns min 12. 'VAB2411AN24 19 |Si8 F116 Multiplier Diode;VB_270V min;Cj 8.0-12pF at 6.0V;Carrier Lifetime 160ns typ 13 VAB2411AN26 19 'Si F49b Multiplier Diode;VB 270V min;Cj 8.0-12pF at 6.0V;Carrier Lifetime 160ns typ 14 VAB2411AN28 19 | Si8 F59h :Muitiplier Diode;VB 270V min;Cj 8.0-12pF at 6.0V;Carrier Lifetime 160ns typ 15. VAB2412AN24 19 :Si Fit iMultiplier Diode; VB 240V_ min;Cj 5.0-8.0pF at 6.0V;Carrier Lifetime 150ns typ 16 VAB2412AN26 19 1Sis F49b Multiplier Diode;VB 240V min;Cj 5.0-8.0pF at 6.0V:Carrier Lifetime 150ns typ 17 VAB2412AN28 119 | Sis F59h Multiplier Diode;VB 240V min;Cj 5.0-8.0pF at 6.0V:Carrier Lifetime 150ns typ 18 VAB2413AN24 119 | Sis F116 Multiplier Diode; VB_180V_ min:Ci 3.0-5.OpF at 6.0V;Carrier Lifetime 100ns typ 19 VAB2413AN26 119 [Sis F49b Multiplier Diode;VB 180V min;Cj 3.0-5.0pF at 6.0V;Carrier Lifetime 100ns typ 20 VAB2413AN28 19 | Sis F59h Multiplier Diode:VB 180V min:Cj 3.0-5.0pF at 6.0V;Carrier Lifetime 100ns typ 21 VAB3203N 100 lig Sis F117 Multiplier Diode; VB_240V min;Cj 2.0-3.0pF at 6.0V;Carrier Lifetime 100ns typ 22 VAB3204N 100 J19 Si8 F117 Multiplier Diode;VB 210V min;Cj 1.5-2.5pF at 6.0V:Carrier Lifetime 9Ons typ 23 VAB3205N99 /19 1 Si8 F118 Multiplier Diode;VB 120V min;Cj .50-pF at 6.0V;Carrier Lifetime 18ns typ 24 VAB3214N100 19 |Si8 EVV? Multiplier Diode: VB 180V_ min;C) 1.0-2. OpF at 6.0V:Carrier Lifetime 75ns typ 25 VAB3215N99 19 [Sis "F118 Multiplier Diode; VB 180V min;Cj .60-.90pF at 6.0V:Carrier Lifetime 75ns typ 26 VAB3221N99 19 |Sis F118 Multiplier Diode: VB 60V min;Cj .50-.70pF at 6.0V;Carrier Lifetime 9.Ons typ 27 VAB3225N99 19 [Si F118 _|Multiplier Diode:VB_150V_ min:Cj .60-.90pF at 6.0V;Carrier Lifetime 25ns typ 28 VAB3231N99 i 19 /Si F118 Multiplier Diode:VB 90V min;Cj .60-.80pF at 6.0V;Carrier Lifetime T1ns typ 29 VAB3241N99 119 | Sis F118 Multiplier Diode:VB 120V min;Cj .70-.90pF at 6.0V;Carrier Lifetime 16ns typ 30 1N3558 20 |Si Al Matched Pair of 1N751A;VZ 10.3V+3%;Temp.Coeff 0.02%/C_ max;Dyn.Imp 400. 31% JAAY43 20 | Geld M458 Diode quad arranged as ring modulator;Vr-25Veach;VF-.58V at IF-10ma. 32# |BAV39 20 |Si TO18 Dual element VF1 and VF2 matched + 10mV at 10mA. 33 BAW31 120 (Si 1TO72 Dual element IR max 5uA at VR 50V_ matched. 34% |BAW64 20 |Si# 'M773 Common Cathode Diode pair;VRWM 60V max;IF max 200mA;trr(max)4ns at IF 10mA;VR 5V;RL 500. 354 |BAW65 20 |Si# M713 Common Cathode Diode pair;VRWM 30V max:IF max 200mA;trr(max)4ns at IF 10mA;VR 5V;RL 500. 36% |BAW66 20 .Si#t M713 Common Anode Diode pair; VRWM 30V_ maxIF max 200mAtrr(max}4ns at 1F_ 10mA;VR 5V;RL 500. 37# |BAW67 20 | Sift M713 Common Cathode Diode pa