NTNS3A91PZ Small Signal MOSFET -20 V, -223 mA, Single P-Channel, 0.62 x 0.62 x 0.4 mm XLLGA3 Package Features * * * * * Single P-Channel MOSFET Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm) Low RDS(on) Solution in 0.62 x 0.62 mm Package 1.5 V Gate Voltage Rating These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MOSFET RDS(on) MAX V(BR)DSS 1.6 W @ -4.5 V 2.4 W @ -2.5 V -20 V -223 mA 3.3 W @ -1.8 V Applications * * * * ID MAX 4.5 W @ -1.5 V Small Signal Load Switch Analog Switch High Speed Interfacing Optimized for Power Management in Ultra Portable Products P-Channel MOSFET D (3) MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage VDSS -20 V Gate-to-Source Voltage VGS 8.0 V ID -223 mA Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25C TA = 85C -161 t5s TA = 25C -240 Steady State TA = 25C t5s TA = 25C Pulsed Drain Current PD mW 121 140 3 XLLGA3 CASE 713AB 2 1 -669 mA TJ, TSTG -55 to 150 C Source Current (Body Diode) IS -121 mA Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C Operating Junction and Storage Temperature S (2) MARKING DIAGRAM IDM tp = 10 ms G (1) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient - Steady State (Note 1) RJA 1035 C/W Junction-to-Ambient - t 5 s (Note 1) RJA 895 1 DM D = Specific Device Code M = Date Code ORDERING INFORMATION Device Package Shipping NTNS3A91PZT5G XLLGA3 (Pb-Free) 8000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1. Surface Mounted on FR4 Board using the minimum recommended pad size, (or 2 mm2), 1 oz Cu. 2. Pulse Test: pulse width 300 ms, duty cycle 2%. (c) Semiconductor Components Industries, LLC, 2012 November, 2012 - Rev. 1 1 Publication Order Number: NTNS3A91PZ/D NTNS3A91PZ ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min -20 Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 mA Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = -250 mA, ref to 25C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = -20 V Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = 8.0 V VGS(TH) VGS = VDS, ID = -250 mA V 11 TJ = 25C mV/C -1.0 mA 2.0 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ -0.4 -1.0 2.1 RDS(on) VGS = -4.5 V, ID = -100 mA 1.1 1.6 VGS = -2.5 V, ID = -50 mA 1.5 2.4 VGS = -1.8 V, ID = -20 mA 2.0 3.3 4.5 VGS = -1.5 V, ID = -10 mA 2.5 Forward Transconductance gFS VDS = -5 V, ID = -100 mA 0.41 Source-Drain Diode Voltage VSD VGS = 0 V, IS = -10 mA -0.6 V mV/C W S -1.0 V CHARGES & CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 41 VGS = 0 V, f = 10 kHz, VDS = -15 V 4.6 4.1 1.1 VGS = -4.5 V, VDS = -15 V, ID = -200 mA pF nC 0.1 0.2 0.23 SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 41 VGS = -4.5 V, VDD = -15 V, ID = -200 mA, RG = 2 W tf 97 571 286 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTNS3A91PZ TYPICAL CHARACTERISTICS VGS = -4.5 V 0.9 -2.5 V -4.0 V 0.8 -3.5 V 0.7 0.6 -2.0 V 0.5 -1.8 V 0.4 0.3 -1.5 V 0.2 0.1 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.0 -3.0 V -1.2 V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.7 0.5 0.4 0.3 0.2 0 0.5 1.0 1.5 2.0 2.5 Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics TJ = 25C ID = -0.1 A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE VOLTAGE (V) 5.0 VGS = -1.5 V 4.5 4.0 VGS = -1.8 V 3.0 2.5 VGS = -2.5 V 2.0 1.5 VGS = -4.5 V 1.0 0.5 0 0 0.1 0.2 0.3 -IDSS, LEAKAGE (nA) VGS = -4.5 V ID = -100 mA 1.3 1.2 VGS = -1.8 V ID = -20 mA 1.1 0.5 0.6 0.7 0.8 0.9 1.0 -ID, DRAIN CURRENT (A) 1000 1.4 0.4 Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1.6 1.5 3.0 TJ = 25C 3.5 Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), NORMALIZED DRAIN-TO-SOURCE RESISTANCE TJ = 125C 0.6 -VGS, GATE-TO-SOURCE VOLTAGE (V) 4.5 1.0 TJ = 25C -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 5.0 0.5 TJ = -55C VDS = -5 V 0.8 0.1 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) -ID, DRAIN CURRENT (A) 0.9 -ID, DRAIN CURRENT (A) 1.0 1.0 0.9 TJ = 125C 100 TJ = 85C 10 0.8 0.7 -50 1 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 20 NTNS3A91PZ VGS = 0 V TJ = 25C f = 10 kHz C, CAPACITANCE (pF) 70 60 Ciss 50 40 30 20 10 0 2 Coss 4 6 8 10 12 14 16 18 20 12 3 9 QGS 2 QGD 0 6 VDS = -15 V TJ = 25C ID = -0.2 A 1 0 3 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 10 td(off) tr 100 td(on) VGS = -4.5 V VDD = -15 V ID = -0.2 A 1 10 TJ = 125C TJ = 25C 1 TJ = -55C 0.1 0.01 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 RG, GATE RESISTANCE (W) -VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 0.85 1 10 ms 0.75 -ID, DRAIN CURRENT (A) t, TIME (ns) VGS VDS QG, TOTAL GATE CHARGE (nC) tf -VGS(th), GATE-TO-SOURCE THRESHOLD VOLTAGE (V) 15 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1000 10 18 QT 4 -IS, SOURCE CURRENT (A) 0 Crss 5 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 80 -VGS, GATE-TO-SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS ID = -250 mA 0.65 0.55 0.45 0.35 -50 -25 0 25 50 75 100 125 150 100 ms 0.1 1 ms VGS -8 V Single Pulse TC = 25C 10 ms 0.01 0.001 RDS(on) Limit Thermal Limit Package Limit 0.1 1 dc 10 TJ, TEMPERATURE JUNCTION (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Threshold Voltage Figure 12. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 100 NTNS3A91PZ R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (C/W) TYPICAL CHARACTERISTICS 1200 1100 1000 RqJA Steady State = 1035C/W 900 800 700 600 Duty Cycle = 0.5 500 400 300 200 100 0 0.05 0.02 0.01 0.20 0.10 Single Pulse 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 t, TIME (s) Figure 13. FET Thermal Response MINIMUM RECOMMENDED SOLDER FOOTPRINT* 2X 0.20 0.60 1 3 2X 0.20 2 0.28 0.62 0.35 PITCH DIMENSIONS: MILLIMETERS *Dependent upon end user capabilities, this footprint could be used as a minimum. http://onsemi.com 5 1E+02 1E+03 NTNS3A91PZ PACKAGE DIMENSIONS XLLGA3, 0.62x0.62, 0.35P CASE 713AB ISSUE O A B D EE EE PIN ONE REFERENCE E 0.10 C 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. DIM A A1 b D D2 D3 E E2 e K L L2 TOP VIEW 0.10 C A 3X 0.10 C A1 C SIDE VIEW SEATING PLANE RECOMMENDED SOLDER FOOTPRINT* D3 e/2 e D2 2 E2 2X 0.10 M b C A B 0.05 M C 1 1 L2 K 2X PACKAGE OUTLINE 0.280 3 2X MILLIMETERS MIN MAX 0.340 0.440 0.000 0.030 0.100 0.200 0.620 BSC 0.175 BSC 0.205 BSC 0.620 BSC 0.400 0.600 0.350 BSC 0.200 REF 0.090 0.210 0.110 0.310 0.10 M C A B 0.05 M C 2X 0.200 2 0.350 PITCH L BOTTOM VIEW 0.600 3 0.350 0.760 DIMENSIONS: MILLIMETERS *Additional information concerning board mounting for this package may be found in Document AND9099/D, "Board Level Application Note for XLLGA 3-Lead 0.62x0.62 Package". For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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