[INTERSIL MATCHED FET PAIRS FOR DIFFERENTIAL AMPLIFIERS Ig < 250 pA (25 nA at 100C) goss < 20 umhos (Ip = 700 uA) Matched Vas, AVas, and gts ABSOLUTE MAXIMUM RATINGS (25C) 2N3921, 2N3922 Dual Monolithic N-Channel JFET PIN CHIP CONFIGURATION TOPOGRAPHY TO-71 6017 ee oo | rt... t. * =... s D, G GATE an FMI @ 0D, ORDERING INFORMATION Gate-Drain or Gate-Source Voltage ............ 00 eee eee -50V Gate Current 2.0... ccc cece ccc e tenn ees aeeeeseneneceenaes 50 mA TO-71 WAFER DICE Total Device Dissipation (Derate 1.7 mW/G to 200C) ... 300 mw 2N3921. | 2N3921/W_| 2N3921/D Storage Temperature Range .................0 eee -65 to +200C 2N3922 | 2N3922/W | 2N3922/D ELECTRICAL CHARACTERISTICS TEST CONDITIONS: 25C unless otherwise noted CHARACTERISTIC MIN | MAX | UNIT TEST CONDITIONS -1 nA : jess Gate Reverse Current -1 pA Vas = -30V, Vos =0 |100C BVpGo Drain-Gate Breakdown Voltage 50 lo = 1A, Ils =0 Vasiott) Gate-Source Cutoff Voltage 3 Vv Vos = 10V, ln =1nA Ves Gate-Source Voltage 0.2 | -2.7 Vos = 10V, ip = 100uA -250 | pA Io Gate Operating Current 25 nA | VOG = 10V, Ip = 700unA Tigo G Ipss Saturation Drain Current (Note 1) 1 10 mA | Vos = 10V, Ves = 0 Qts Common-Source Forward Transconductance (Note 1)} 1500 | 7500 zmho Yos Common-Source Output Conductance 35 Vos =10V. Veg=0. |f=1kk: Ciss Common-Source Input Capacitance 18 F os = VGs = ~ 2 Crss Common-Source Reverse Transter Capacitance 6 p Ofs Common-Source Forward Transconductance 1500 mho = = = Goss Common-Source Output Conductance 20 # Voa = 10V, Ip = 700 pA 1 kHz NF Spot Noise Figure 2 dB | Vos = 10V, Vas = 0 f= 1 kHz, Re = 1 meg 2N3921 2N3922 CHARACTERISTIC MIN | MAX | MIN | MAX | UNIT TEST CONDITIONS {Vas1-Vasal Differential! Gate-Source Voltage 5 5 mV _ AlVas1-Vasal Gate-Source Differential Voltage 10 26 uv?C | Voge = 10V, Ta =0 C AT Change with Temperature: ip = 700 pA te = 100C Qts1/ Qts2 Transconductance Ratio 0.95 1.0 0.95 1.0 _ f = 1 kHz NOTE: 1. Pulse test duration = 2 ms. 1-58