TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors * High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A (Min.) * Industrial Use * Complement to TIP140T/141T/142T Equivalent Circuit C B 1 TO-220 1.Base 2.Collector Absolute Maximum Ratings * Symbol R1 3.Emitter R2 R1 8k R2 0.12k E TC=25C unless otherwise noted Parameter Value Units BVCBO Collector-Base Voltage : TIP145T : TIP146T : TIP147T - 60 - 80 - 100 V V V BVCEO Collector-Emitter Voltage : TIP145T : TIP146T : TIP147T - 60 - 80 - 100 V V V BVEBO Emitter-Base Voltage -5 V IC Collector Current (DC) - 10 A ICP Collector Current (Pulse) - 15 A IB Base Current (DC) - 0.5 A PC Collector Dissipation (TC=25C) 80 W TJ Junction Temperature 150 C TSTG Storage Junction Temperature Range - 65 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. (c) 2008 Fairchild Semiconductor Corporation TIP145T/146T/147T Rev. C www.fairchildsemi.com 1 TIP145T/146T/147T -- PNP Epitaxial Silicon Darlington Transistor August 2008 Symbol VCEO(sus) ICEO ICBO Parameter Collector-Emitter Sustaining Voltage : TIP145T : TIP146T : TIP147T Conditions IC = - 30mA, IB = 0 Min. Typ. Max - 60 - 80 - 100 Units V V V Collector Cut-off Current : TIP145T : TIP146T : TIP147T VCE = - 30V, IB = 0 VCE = - 40V, IB = 0 VCE = - 50V, IB = 0 -2 -2 -2 mA mA mA : TIP145T : TIP146T : TIP147T VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 -1 -1 -1 mA mA mA -2 mA Collector Cut-off Current IEBO Emitter Cut-off Current VBE = - 5V, IC = 0 hFE DC Current Gain VCE = - 4V, IC = - 5A VCE = - 4V, IC = - 10A VCE(sat) Collector-Emitter Saturation Voltage IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA -2 -3 V V VBE(sat) Base-Emitter Saturation Voltage IC = - 10A, IB = - 40mA - 3.5 V VBE(on) Base-Emitter On Voltage VCE = - 4V, IC = - 10A -3 V td Delay Time tr Rise Time VCC = - 30V, IC = - 5A IB1 = -20mA, IB2 = 20mA RL = 6 tstg tf 1000 500 0.15 s 0.55 s Storage Time 2.5 s Fall Time 2.5 s * Pulse Test: Pulse Width300s, Duty Cycle2% (c) 2008 Fairchild Semiconductor Corporation TIP145T/146T/147T Rev. C www.fairchildsemi.com 2 TIP145T/146T/147T -- PNP Epitaxial Silicon Darlington Transistor Electrical Characteristics * TC=25C unless otherwise noted -10 100000 VCE = -4V -8 IB = -2000A -7 -6 IB = -1800A IB = -1600A IB = -1400A IB = -1200A hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT -9 IB = -1000A -5 IB = -800A -4 IB = -600A -3 -2 10000 1000 IB = -400A -1 -0 -0 -1 -2 -3 -4 100 -0.1 -5 -1 Figure 1. Static Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 -100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC current Gain -1000 -10 f=0.1MHz IC=-500IB Cob[pF], CAPACITANCE VBE(sat) -1 VCE(sat) -0.1 -100 -10 -0.01 -0.1 -1 -10 -1 -100 IC[A], COLLECTOR CURRENT -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 120 -100 PC[W], POWER DISSIPATION -10 DC IC[A], COLLECTOR CURRENT 100 -1 TIP145T TIP146T 80 60 40 20 TIP147T 0 -0.1 -1 -10 -100 0 -1000 50 75 100 125 150 175 o VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating (c) 2008 Fairchild Semiconductor Corporation TIP145T/146T/147T Rev. C 25 www.fairchildsemi.com 3 TIP145T/146T/147T -- PNP Epitaxial Silicon Darlington Transistor Typical Characteristics TIP145T/146T/147T -- PNP Epitaxial Silicon Darlington Transistor Mechanical Dimensions TO220 (c) 2008 Fairchild Semiconductor Corporation TIP145T/146T/147T Rev. C www.fairchildsemi.com 4 TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor (c) 2008 Fairchild Semiconductor Corporation TIP145T/146T/147T Rev. C www.fairchildsemi.com 5