© Semiconductor Components Industries, LLC, 2015
November, 2015 − Rev. 9 1Publication Order Number:
MMBT3904WT1/D
MMBT3904WT1G, NPN,
SMMBT3904WT1G, NPN,
MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
General Purpose
Transistors
NPN and PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−323/SC−70 package which
is designed for low power surface mount applications.
Features
•S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
VCEO 40
−40
Vdc
Collector−Base Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
VCBO 60
−40
Vdc
Emitter−Base Voltage
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
VEBO 6.0
−5.0
Vdc
Collector Current − Continuous
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1, SMMBT3906WT1
IC200
−200
mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
@TA = 25°CPD150 mW
Thermal Resistance, Junction−to−Ambient RqJA 833 °C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
COLLECTOR
3
1
BASE
2
EMITTER
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Device Package Shipping†
ORDERING INFORMATION
xx = AM for MMBT3904WT1,
SMMBT3904WT
= 2A for MMBT3906WT1,
SMMBT3906WT1
M = Date Code*
G= Pb−Free Package
MMBT3906WT1G,
SMMBT3906WT1G SC−70/
SOT−323
(Pb−Free)
3000 / Tape &
Reel
MMBT3904WT1G,
SMMBT3904WT1G SC−70/
SOT−323
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
SC−70 (SOT−323)
CASE 419
STYLE 3
3
12
MARKING DIAGRAM
xx M G
G
1
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0) MMBT3904WT1, SMMBT3904WT1
(IC = −1.0 mAdc, IB = 0) MMBT3906WT1, SMMBT3906WT1
V(BR)CEO 40
−40 −
−
Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0) MMBT3904WT1, SMMBT3904WT1
(IC = −10 mAdc, IE = 0) MMBT3906WT1, SMMBT3906WT1
V(BR)CBO 60
−40 −
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0) MMBT3904WT1, SMMBT3904WT1
(IE = −10 mAdc, IC = 0) MMBT3906WT1, SMMBT3906WT1
V(BR)EBO 6.0
−5.0 −
−
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1
(VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3906WT1, SMMBT3906WT1
IBL −
−50
−50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1
(VCE = −30 Vdc, VEB = −3.0 Vdc) MMBT3906WT1, SMMBT3906WT1
ICEX −
−50
−50
nAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc) MMBT3904WT1, SMMBT3904WT1
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = −0.1 mAdc, VCE = −1.0 Vdc) MMBT3906WT1, SMMBT3906WT1
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
hFE 40
70
100
60
30
60
80
100
60
30
−
−
300
−
−
−
−
300
−
−
−
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1
(IC = −50 mAdc, IB = −5.0 mAdc)
VCE(sat) −
−
−
−
0.2
0.3
−0.25
−0.4
Vdc
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1
(IC = −50 mAdc, IB = −5.0 mAdc)
VBE(sat) 0.65
−
−0.65
−
0.85
0.95
−0.85
−0.95
Vdc
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT3904WT1, SMMBT3904WT1
(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz) MMBT3906WT1, SMMBT3906WT1
fT300
250 −
−
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1
(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3906WT1, SMMBT3906WT1
Cobo −
−4.0
4.5
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3904WT1, SMMBT3904WT1
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3906WT1, SMMBT3906WT1
Cibo −
−8.0
10.0
pF
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1
hie 1.0
2.0 10
12
k W
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1
hre 0.5
0.1 8.0
10
X 10−4
Small−Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1
hfe 100
100 400
400
−
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) MMBT3904WT1, SMMBT3904WT1
(VCE = −10 Vdc, IC = −1.0 mAdc, f = 1.0 kHz) MMBT3906WT1, SMMBT3906WT1
hoe 1.0
3.0 40
60
mmhos
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
MMBT3904WT1, SMMBT3904WT1
(VCE = −5.0 Vdc, IC = −100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
MMBT3906WT1, SMMBT3906WT1
NF
−
−5.0
4.0
dB
SWITCHING CHARACTERISTICS
Characteristic Condition Symbol Min Max Unit
Delay Time (VCC = 3.0 Vdc, VBE = −0.5 Vdc)
MMBT3904WT1, SMMBT3904WT1
(VCC = −3.0 Vdc, VBE = 0.5 Vdc)
MMBT3906WT1, SMMBT3906WT1
td−
−
35
35 ns
Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
(IC = −10 mAdc, IB1 = −1.0 mAdc)
MMBT3906WT1, SMMBT3906WT1
tr−
−
35
35
Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc)
MMBT3904WT1, SMMBT3904WT1
(VCC = −3.0 Vdc, IC = −10 mAdc)
MMBT3906WT1, SMMBT3906WT1
ts−
−
200
225 ns
Fall Time (IB1 = IB2 = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1
(IB1 = IB2 = −1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 tf−
−50
75
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
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MMBT3904WT1, SMMBT3904WT1
Figure 1. Delay and Rise Time
Equivalent Test Circuit Figure 2. Storage and Fall Time
Equivalent Test Circuit
+3 V
275
10 k
1N916 CS < 4 pF*
+3 V
275
10 k
CS < 4 pF*
< 1 ns
-0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
-9.1 V
+10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 ms
* Total shunt capacitance of test jig and connectors
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
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MMBT3904WT1, SMMBT3904WT1
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
Figure 4. Rise Time
IC, COLLECTOR CURRENT (mA)
TIME (ns)
1.0 2.0 3.0 10 20 70
5100
t , RISE TIME (ns)
Figure 5. Storage Time
IC, COLLECTOR CURRENT (mA)
Figure 6. Fall Time
IC, COLLECTOR CURRENT (mA)
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
r
t , FALL TIME (ns)
f
t , STORAGE TIME (ns)
s
′
VCC = 40 V
IC/IB = 10
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
IC/IB = 10
IC/IB = 20
IC/IB = 10
IC/IB = 20
t′s = ts - 1/8 tf
IB1 = IB2
MMBT3904WT1 MMBT3904WT1
MMBT3904WT1 MMBT3904WT1
TJ = 25°C
TJ = 125°C
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
Figure 7. Noise Figure
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 8. Noise Figure
RS, SOURCE RESISTANCE (k OHMS)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
SOURCE RESISTANCE = 500 W
IC = 100 mA
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
MMBT3904WT1 MMBT3904WT1
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
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MMBT3904WT1, SMMBT3904WT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
Figure 9. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 10. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , CURRENT GAIN
h , OUTPUT ADMITTANCE ( mhos)
Figure 11. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5
10
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k OHMS)
ie
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
2
1
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
fe
m
-4
MMBT3904WT1 MMBT3904WT1
MMBT3904WT1 MMBT3904WT1
TYPICAL STATIC CHARACTERISTICS
Figure 13. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
1000
10
1.0
TJ = 150°C
25°C
-55°C
hFE, DC CURRENT GAIN
10 100 1000
VCE = 1 V
MMBT3904WT1
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
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MMBT3904WT1, SMMBT3904WT1
Figure 14. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
MMBT3904WT1
Figure 15. Collector Emitter Saturation Voltage
vs. Collector Current Figure 16. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0
0.1
0.3
0.4
0.5
0.7
0.8
0.9
10.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 17. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
0.2
0.6
IC/IB = 10
150°C
−55°C
25°C
IC/IB = 10
150°C
−55°C
25°C
150°C
−55°C
25°C
VCE = 1 V
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
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MMBT3904WT1, SMMBT3904WT1
Figure 18. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
-0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100
COEFFICIENT (mV/ C)
200
-1.0
-1.5
-2.0
°
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
qVC FOR VCE(sat)
qVB FOR VBE(sat)
MMBT3904WT1
Figure 19. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
Cibo
Cobo
TJ = 25°C
TJ = 125°C
MMBT3904WT1
Figure 20. Current Gain Bandwidth Product
vs. Collector Current Figure 21. Safe Operating Area
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
10001001010.1
10
100
1000
1001010.1
0.001
0.01
0.1
1
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
IC, COLLECTOR CURRENT (A)
VCE = 1 V
TA = 25°C1 mS
Thermal Limit
1 S
100 mS 10 mS
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
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MMBT3906WT1, SMMBT3906WT1
Figure 22. Delay and Rise Time
Equivalent Test Circuit Figure 23. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916 CS < 4 pF*
3 V
275
10 k
CS < 4 pF*
< 1 ns
+10.6 V 300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t1
0
10 < t1 < 500 ms
* Total shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
Figure 24. Turn−On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
MMBT3906WT1
Figure 25. Fall Time
IC, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 200
10
30
7
20
t , FALL TIME (ns)
f
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
MMBT3906WT1
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50 mA
IC = 100 mA
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC = 100 mA
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
Figure 26.
f, FREQUENCY (kHz)
1.0
2.0
3.0
4.0
5.0
0.1
Figure 27.
RS, SOURCE RESISTANCE (kW)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0
100
4.0
6.0
8.0
10
2.0
12
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 100
NF, NOISE FIGURE (dB)
MMBT3906WT1 MMBT3906WT1
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
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MMBT3906WT1, SMMBT3906WT1
h PARAMETERS
hfe, CURRENT GAIN
Figure 28. Current Gain
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 29. Output Admittance
IC, COLLECTOR CURRENT (mA)
h , OUTPUT ADMITTANCE ( mhos)
Figure 30. Input Impedance
IC, COLLECTOR CURRENT (mA)
Figure 31. Voltage Feedback Ratio
IC, COLLECTOR CURRENT (mA)
30
100
70
10
30
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5
10
0.5
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k
ie
0.1 0.2 1.0 2.0 5.0 10
0.5
0.1 0.2 1.0 2.0 5.0 10
0.5
7.0
5.0
0.1 0.2 1.0 2.0 5.0 10
0.5
m
-4
(V
CE
= −10 Vdc, f = 1.0 kHz, T
A
= 25
°
C)
50
20
Ω)
MMBT3906WT1 MMBT3906WT1
MMBT3906WT1 MMBT3906WT1
0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0
0.3
0.7
3.0
7.0
0.3 0.7 3.0 7.0 0.3 0.7 3.0 7.0
STATIC CHARACTERISTICS
Figure 32. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
1000
10
1.0
TJ = 150°C
25°C
-55°C
hFE, DC CURRENT GAIN
10 100 1000
VCE = 1 V
MMBT3906WT1
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
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MMBT3906WT1, SMMBT3906WT1
Figure 33. Collector Saturation Region
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
MMBT3906WT1
Figure 34. Collector Emitter Saturation Voltage
vs. Collector Current Figure 35. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0
0.05
0.15
0.20
0.25
0.40
0.45
0.50
10.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 36. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
10.10.010.0010.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VBE(on), BASE−EMITTER VOLTAGE (V)
0.10
0.30
IC/IB = 10 150°C
−55°C
25°C
IC/IB = 10
150°C
−55°C
25°C
150°C
−55°C
25°C
VCE = 1 V
0.35
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
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12
MMBT3906WT1, SMMBT3906WT1
Figure 37. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
-0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 200
-1.0
-1.5
-2.0
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
qVC FOR VCE(sat)
qVS FOR VBE(sat)
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
MMBT3906WT1
Cibo
Cobo
Figure 38. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
TJ = 25°C
TJ = 125°C
MMBT3906WT1
Figure 39. Current Gain Bandwidth Product
vs. Collector Current Figure 40. Safe Operating Area
IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (V)
10001001010.1
10
100
1000
1001010.1
0.001
0.01
0.1
1
fT, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
IC, COLLECTOR CURRENT (A)
VCE = 1 V
TA = 25°C1 mS
Thermal Limit
1 S
100 mS 10 mS
MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP,
SMMBT3906WT1G, PNP
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13
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
AA2
De1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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