LESHAN RADIO COMPANY, LTD.
M26–1/5
1
3
2
MMBTA13LT1
MMBTA14LT1
2
EMITTER
3
COLLECTOR
1
BASE
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
Darlington Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CES 30 Vdc
Collector–Base V oltage V CBO 30 Vdc
Emitter–Base V oltage V EBO 10 Vdc
Collector Current — Continuous I C300 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P D225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R θJA 556 °C/W
Total Device Dissipation P D300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R θJA 417 °C/W
Junction and Storage Temperature T J , T stg –55 to +150 °C
DEVICE MARKING
MMBTA13L T1 = 1M; MMBTA14LT1 = 1N
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage V (BR)CEO 30 — Vdc
(I C = 100 µAdc, V BE = 0)
Collector Cutoff Current I CBO — 100 nAdc
( V CB = 30Vdc, I E = 0)
Emitter Cutoff Current I EBO — 100 nAdc
( V EB = 10Vdc, I C = 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.