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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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©2007 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FGH30N60LSD Rev. C1
FGH30N60LSD — 600 V, 30 A PT IGBT
November 2013
FGH30N60LSD
600 V, 30 A PT IGBT
Features
• Low Saturation Voltage: VCE(sat) = 1.1 V @ IC = 30 A
• High Input Impedance
• Low Conduction Loss
Applications
• Solar Inverter, UPS
General Description
Using Fairchild's advanced PT technology, the FGA30N60LSD
IGBT offers superior conduction performances, which offer the
optimum performance for medium switching application such as
solar inverter, UPS applications where low conduction losses
are the most important factor.
Absolute Maximum Ratings
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Description Ratings Unit
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage 20 V
ICCollector Current @ TC = 25C60 A
Collector Current @ TC = 100C30 A
ICM (1) Pulsed Collector Current 90 A
IFSM Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave 150 A
PDMaximum Power Dissipation @ TC = 25C 480 W
Maximum Power Dissipation @ TC = 100C 192 W
TJ Operating Junction Temperature -55 to +150 C
Tstg Storage Temperature Range -55 to +150 C
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds 300 C
Symbol Parameter Typ. Max. Unit
RJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.26 C/W
RJC(Diode) Thermal Resistance, Junction-to-Case -- 0.92 C/W
RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W
G
C
E
G
C
E
TO-247
GCE
©2007 Fairchild Semiconductor Corporation 2www.fairchildsemi.com
FGH30N60LSD Rev. C1
FGH30N60LSD — 600 V, 30 A PT IGBT
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGH30N60LSDTU FGH30N60LSD TO-247 Tube N/A N/A 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 600 -- -- V
BVCES/
TJ
Temperature Coefficient of Breakdown
Voltage VGE = 0 V, IC = 250 uA -- 0.6 -- V/C
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V -- -- ±250 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 uA, VCE = VGE 4.0 5.5 7.0 V
VCE(sat) Collector to Emitter
Saturation Voltage
IC = 30 A, VGE = 15 V -- 1.1 1.4 V
IC = 30 A, VGE = 15 V,
TC = 125C-- 1.0 -- V
IC = 60 A, VGE = 15 V -- 1.3 -- V
Dynamic Characteristics
Cies Input Capacitance VCE = 30 V, VGE = 0 V,
f = 1 MHz
-- 3550 -- pF
Coes Output Capacitance -- 245 -- pF
Cres Reverse Transfer Capacitance -- 90 -- pF
Switching Characteristics
td(on) Turn-On Delay Time
VCC = 400 V, IC = 30 A,
RG = 6.8 , VGE = 15 V,
Inductive Load, TC = 25C
-- 18 -- ns
trRise Time -- 46 -- ns
td(off) Turn-Off Delay Time -- 250 -- ns
tfFall Time -- 1.3 2.0 us
Eon Turn-On Switching Loss -- 1.1 -- mJ
Eoff Turn-Off Switching Loss -- 21 -- mJ
td(on) Turn-On Delay Time
VCC = 400 V, IC = 30 A,
RG =6.8 , VGE = 15 V,
Inductive Load, TC = 125C
-- 17 -- ns
trRise Time -- 45 -- ns
td(off) Turn-Off Delay Time -- 270 -- ns
tfFall Time -- 2.6 -- us
Eon Turn-On Switching Loss -- 1.1 -- mJ
Eoff Turn-Off Switching Loss -- 36 -- mJ
QgTotal Gate Charge VCE = 600 V, IC = 30 A,
VGE = 15 V
-- 225 -- nC
Qge Gate-Emitter Charge -- 30 -- nC
Qgc Gate-Collector Charge -- 105 -- nC
LeInternal Emitter Inductance Measured 5mm from PKG -- 7 -- nH
©2007 Fairchild Semiconductor Corporation 3www.fairchildsemi.com
FGH30N60LSD Rev. C1
FGH30N60LSD — 600 V, 30 A PT IGBT
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Parameter Conditions Min. Typ. Max Unit
VFM IF = 15 A
IF = 15 A TC = 25 C
TC = 125 C-
-1.8
1.6 2.2
-V
V
IRM VR = 600 V TC = 25 C - - 100 A
trr IF =1 A, diF/dt = 100 A/s, VR = 30 V
IF =15 A, diF/dt = 100 A/s, VR = 390 V TC = 25 C
TC = 25 C-
--
-35
40 ns
ns
ta
tb
Qrr
IF =15 A, diF/dt = 100 A/s, VR = 390 V TC = 25 C
TC = 25 C
TC = 25 C
-
-
-
18
13
27.5
-
-
-
ns
ns
nC
©2007 Fairchild Semiconductor Corporation 4www.fairchildsemi.com
FGH30N60LSD Rev. C1
FGH30N60LSD — 600 V, 30 A PT IGBT
Typical Performance Characteristics
Figure 1.Typical Output Characteristics Fig ure 2. Ty pic al Satura tion Vo ltage
Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer characteristics
Characteritics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. Vge
Temperature at Variant Current Level
01234
0
30
60
90 TC = 25oCVGE = 20V
1 5 V
1 2 V
1 0 V
8 V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
01234
0
30
60
90 TC = 125oCVGE = 20V
15 V
12 V
10 V
8V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
024681012
0
30
60
90 Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Gate-Emitter Vo ltag e,V GE [V]
0123
0
30
60
90 Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
Collector Current, IC [A]
Colle cto r-E mitter Voltag e , VCE [V]
25 50 75 100 125
0.6
0.8
1.0
1.2
1.
4
60A
30A
IC = 15A
Com m on Em itter
VGE = 15V
Collector-Emitter Voltage, VCE [V]
Case Tem perature, TC [oC]
0 4 8 121620
0
4
8
12
16
20
IC = 1 5A
30A 60A
Comm on E m itter
TC = 25oC
Collector-Emitter Voltage, VCE [V]
Gate -E m itte r V olta g e, V GE [V]
©2007 Fairchild Semiconductor Corporation 5www.fairchildsemi.com
FGH30N60LSD Rev. C1
FGH30N60LSD — 600 V, 30 A PT IGBT
Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance characteristics
Figure 9. Gate Charge Characteristics Figure 10. SOA Characteeristics
Figure 11. Load Current Vs. Frequency Figure 12. Turn-On Characteristics vs.
Gate Resistance
0 4 8 12 16 20
0
4
8
12
16
20
IC = 15A
30A 60A
Comm on Emitter
TC = 125oC
Collector-Emitter Voltage, V CE [V]
Gate-Emitter Voltage, VGE [V]
0 5 10 15 20 25 30
100
1000
10000
13000
Comm on E m itter
VGE = 0V, f = 1MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Colle cto r-E mitter Volta g e, V CE [V ]
50
0 50 100 150 200 250
0
3
6
9
12
15 Comm on Em itter
IC = 30A
TC = 25oC
300V
200V
Vcc = 100V
Gate-Emitter Voltage, VGE [V]
Ga te Charg e , Q g [nC]
0.1 1 10 100 1000
0.1
1
10
100 50s
100s
DC Operation
1ms
Ic MAX (Continuous)
Ic MAX (Pulsed)
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]
300
0 1020304050
10
100
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
td(on)
tr
Switching Time [ns]
Gate Resistance, RG []
200
0.1 1 10 100 1000
0
10
20
30
40
50
60
70
80 Vcc = 400V
load C urrent : peak of square wav e
Duty cy cle : 50%
Tc = 100oC
Pow e D issipation = 192W
Collector Cu rre n t , IC [A]
Frequency, f [kHz]
©2007 Fairchild Semiconductor Corporation 6www.fairchildsemi.com
FGH30N60LSD Rev. C1
FGH30N60LSD — 600 V, 30 A PT IGBT
Typical Performance Characteristics (Continued)
Figure 13. Turn-Off Characteristics vs. Figure 14. Turn-On Characteristics vs.
Gate Resistance Collector Current
Figure 15. Turn-Off Charact eristics v s. Figure 16. Switchin g Los s vs
Collector Current Gate Resistance
Figure 17.Switching Loss vs Collec tor Current Figure 18. Turn-Off Switching
SOA Characteristics
0 1020304050
100
1000
Common Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
td(off)
tf
Switching Time [ns]
Gate Resistance, RG []
3000
20 30 40 50 60 70 80
10
100
Comm on Em itter
VGE = 15V, RG = 6.8
TC = 25oC
TC = 125oC
tr
td(on)
Switching Time [ns]
Collector Current, IC [A ]
500
20 30 40 50 60 70 80
100
1000 Common Emitter
VGE = 15V, RG = 6.8
TC = 25oC
TC = 125oC
td(off)
tf
Switching Time [ns]
Collector Current, IC [A]
6000
5 101520253035404550
1
10
100
Comm on Emitter
VCC = 400V, VGE = 15V
IC = 30A
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [mJ]
Gate Resistance, RG []
500
10 20 30 40 50 60 70 80
0.1
1
10
100
Common Emitter
VGE = 15V, RG = 6.8
TC = 25oC
TC = 125oC
Eon
Eoff
Switching Loss [mJ]
Collector Current, IC [A]
1 10 100 1000
1
10
100
Safe Operating Area
VGE = 15V, TC = 125oC
Collector Curren t , I C [A]
Collecto r-Em itter Voltag e, VCE [V ]
200
©2007 Fairchild Semiconductor Corporation 7www.fairchildsemi.com
FGH30N60LSD Rev. C1
FGH30N60LSD — 600 V, 30 A PT IGBT
Figure 19. Transient Thermal Impedance of IGBT
Figure 20. Forward Characteristics Figure 21. Reverse Current
Figure 22. Reverse Recovery Time
1E-5 1E-4 1E-3 0.01 0.1 1 10
1E-3
0.01
0.1
1
0.5
0.2
0.1
0.05
0.02
single pulse
Thermal Response [Zthjc]
Rectang u lar Pulse D u ration [s ec]
Dut y Fact o r , D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
t1
PDM
t2
0 100 200 300 400 500 600
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
TC = 25oC
TC = 75oC
REVERSE CURRENT, IR [A]
REVERSE VOLTAG E, VR [V]
TC = 125oC
0.00.40.81.21.62.02.42.83.2
0.1
1
10
100
TC=75oC
TC=25oC
FORWARD CU RRENT, IF [A]
FORW ARD VO LTAGE, VF [V ]
TC=125oC
100 200 300 400 500
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
190
200
TC = 125oC
TC = 75oC
REVERSE RECOV ERY TIME, trr [ns]
diF/d t [A / s]
TC = 25oC
IF = 15A
©2007 Fairchild Semiconductor Corporation 8www.fairchildsemi.com
FGH30N60LSD Rev. C1
FGH30N60LSD — 600 V, 30 A PT IGBT
Mechanical Dimensions
Figure 23. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB
Package drawings are provided as a service to customers consider ing Fairchild components. Drawings may change in any manner
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2007 Fairchild Semiconductor Corporation 9www.fairchildsemi.com
FGH30N60LSD Rev. C1
FGH30N60LSD — 600 V, 30 A PT IGBT
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