May 2008 Rev 6 1/16
16
STB11NK50Z - STP11NK50ZFP
STP11NK50Z
N-channel 500 V, 0.48 Ω , 10 A TO-220, TO-220FP, D2PA K
Zener-protected SuperMESHTM Power MOSFET
Features
■Extremely high dv/dt capability
■100% avalanche tested
■Gate charge minimized
■Very low intrinsic capacitances
Application
■Switching applications
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Figure 1. Internal schematic diagram
Type VDSS
RDS(on)
max IDPw
STB11NK50Z 500 V < 0.52 Ω10 A 125 W
STP11NK50ZFP 500 V < 0.52 Ω10 A 30 W
STP11NK50Z 500 V < 0.52 Ω10 A 125 W TO-220FP
TO-220
D2PAK
123
12
3
1
3
Table 1. Device summary
Order codes Marking Package Packaging
STB11NK50ZT4 B11NK50Z D²PAK Tape and reel
STP11NK50ZFP P11NK50ZFP TO-220FP Tube
STP11NK50Z P11NK50Z TO-220 Tube
www.st.com
Contents STB11NK50Z - STP11NK50ZFP - STP11NK50Z
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Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STB11NK50Z - STP11NK50ZFP - STP11NK50Z Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220
D²PAK TO-220FP
VDS Drain-source voltage (VGS = 0) 500 V
VGS Gate-source voltage ± 30 V
IDDrain current (continuous) at TC = 25 °C 10 10(1)
1. Limited only by maximum temperature allowed
A
IDDrain current (continuous) at TC=100 °C 6.3 6.3(1) A
IDM(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 40 40(1) A
PTOT Total dissipation at TC = 25 °C 125 30 W
Derating factor 1 0.24 W/°C
VESD(G-S)
Gate source ESD (HBM-C= 100 pF,
R= 1.5 kΩ)4000 V
dv/dt(3)
3. ISD ≤ 10 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Peak diode recovery voltage slope 4.5 V/ns
VISO Insulation withstand voltage (DC) -- 2500 V
TJ
Tstg
Operating junction temperature
Storage temperature -55 to 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220
D²PAK TO-220FP
Rthj-case Thermal resistance junction-case max 1 4.2 °C/W
Rthj-a Thermal resistance junction-ambient max 62.5 °C/W
Tl
Maximum lead temperature for soldering
purpose 300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max) 10 A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID=IAR, VDD = 50 V) 190 mJ
Electrical characteristics STB11NK50Z - STP11NK50ZFP - STP11NK50Z
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2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown
voltage ID = 1 mA, VGS= 0 500 V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125 °C
1
50
µA
µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ±20 V ±10 µA
VGS(th) Gate threshold voltage VDS= VGS, ID = 100 µA 33.754.5 V
RDS(on) Static drain-source on
resistance VGS= 10 V, ID= 4.5 A 0.48 0.52 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs (1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance VDS =15 V, ID = 4.5 A 7.7 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz, VGS=0
1390
173
42
pF
pF
pF
Coss eq(2).
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance VGS=0, VDS =0 to 400 V 110 pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=400 V, ID = 11.4 A
VGS =10 V
(see Figure 18)
49
10
25
68 nC
nC
nC
STB11NK50Z - STP11NK50ZFP - STP11NK50Z Electrical characteristics
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Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD= 250 V, ID=5.5 A,
RG= 4.7 Ω, VGS=10 V
(see Figure 19)
14.5
18
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD = 250 V, ID=5.5 A,
RG = 4.7 Ω, VGS=10 V
(see Figure 19)
41
15
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=400 V, ID=11.4 A,
RG=4.7 Ω, VGS=10 V
(see Figure 19)
11.5
12
27
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ. Max Unit
ISD Source-drain current 10 A
ISDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) 40 A
VSD(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage ISD=10 A, VGS=0 1.6 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=10 A,
di/dt = 100 A/µs,
VDD=45 V, Tj=150 °C
308
2.4
16
ns
µC
A
Table 9. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
BVGSO(1)
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Gate-source breakdown voltage Igs=±1mA (open drain) 30 V
Electrical characteristics STB11NK50Z - STP11NK50ZFP - STP11NK50Z
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2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220 /
D²PAK
Figure 3. Thermal impedance for TO-220 /
D²PAK
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
Figure 6. Output characteristics Figure 7. Transfer characteristics
STB11NK50Z - STP11NK50ZFP - STP11NK50Z Electrical characteristics
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Figure 8. Transconductance Figure 9. Static drain-source on resistance
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
vs temperature
Figure 13. Normalized on resistance vs
temperature
Electrical characteristics STB11NK50Z - STP11NK50ZFP - STP11NK50Z
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Figure 14. Source-drain diode forward
characteristics
Figure 15. Normalized BVDSS vs temperature
Figure 16. Maximum avalanche energy vs
temperature
STB11NK50Z - STP11NK50ZFP - STP11NK50Z Test circuit
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3 Test circuit
Figure 17. Switching times test circuit for
resistive load
Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
switching and diode recovery times
Figure 20. Unclamped Inductive load test
circuit
Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
Package mechanical data STB11NK50Z - STP11NK50ZFP - STP11NK50Z
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4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
STB11NK50Z - STP11NK50ZFP - STP11NK50Z Package mechanical data
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TO-220 mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
b0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c0.480.70 0.0190.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F1.231.32 0.0480.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L1314 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
∅P3.75 3.85 0.147 0.151
Q2.65 2.95 0.104 0.116
Package mechanical data STB11NK50Z - STP11NK50ZFP - STP11NK50Z
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Dim. mm. inch
Min. Typ Max. Min. Typ. Max.
A 4.40 4.60 0.1730.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.017 0.027
F 0.75 1.00 0.0300.039
F1 1.15 1.50 0.045 0.067
F2 1.15 1.50 0.045 0.067
G4.955.200.1950.204
G1 2.40 2.70 0.094 0.106
H 10 10.40 0.393 0.409
L2 16 0.630
L328.6 30.6 1.126 1.204
L4 9.80 10.60 0.385 0.417
L5 2.93.6 0.114 0.141
L6 15.90 16.40 0.626 0.645
L7 99.300.354 0.366
Dia3 3.2 0.1180.126
TO-220FP mechanical data
L2
A
B
D
E
H
G
L6
F
L3
G1
123
F2
F1
L7
L4
L5
7012510-I
Dia
STB11NK50Z - STP11NK50ZFP - STP11NK50Z Package mechanical data
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D²PAK (TO-263) mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
A1 0.030.230.001 0.009
b0.70 0.93 0.027 0.037
b2 1.14 1.70 0.045 0.067
c 0.45 0.60 0.017 0.024
c2 1.231.360.0480.053
D8.959.350.352 0.368
D1 7.50 0.295
E 10 10.40 0.3940.409
E1 8.50 0.334
e 2.54 0.1
e1 4.88 5.280.1920.208
H15 15.850.5900.624
J1 2.492.690.099 0.106
L2.292.790.090 0.110
L1 1.27 1.40 0.05 0.055
L2 1.30 1.75 0.051 0.069
R 0.4 0.016
V2 0° 8°0° 8°
0079457_M
Packaging mechanical data STB11NK50Z - STP11NK50ZFP - STP11NK50Z
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5 Packaging mechanical data
TAPE AND REEL SHIPMENT
D2PAK FOOTPRINT
* on sales type
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0795
G 24.4 26.4 0.960 1.039
N100 3.937
T 30.4 1.197
BASE QTY BULK QTY
1000 1000
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0.065 0.073
F11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W23.7 24.3 0.933 0.956
TAPE MECHANICAL DATA
STB11NK50Z - STP11NK50ZFP - STP11NK50Z
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