New Product P6SMB Series Vishay General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional and bi-directional * 600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % * Excellent clamping capability DO-214AA (SMB) * Very fast response time * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS VBR uni-directional 6.8 V to 540 V VBR bi-directional 6.8 V to 220 V PPPM 600 W PD 5.0 W IFSM (uni-directional only) 100 A TJ max. 150 C * Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MECHANICAL DATA DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional use C or CA suffix (e.g. P6SMB10CA). Electrical characteristics apply in both directions. Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Peak power dissipation with a 10/1000 s Peak pulse current with a 10/1000 s waveform (1)(2) (fig. 1) waveform (1) Power dissipation on infinite heatsink TA = 50 C Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range SYMBOL VALUE UNIT PPPM 600 W IPPM See next table A PD 5.0 W IFSM 100 A TJ, TSTG - 65 to + 150 C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2 A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Document Number: 89283 Revision: 20-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product P6SMB Series Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PART NUMBER P6SMB6.8A P6SMB7.5A P6SMB8.2A P6SMB9.1A P6SMB10A P6SMB11A P6SMB12A P6SMB13A P6SMB15A P6SMB16A P6SMB18A P6SMB20A P6SMB22A P6SMB24A P6SMB27A P6SMB30A P6SMB33A P6SMB36A P6SMB39A P6SMB43A P6SMB47A P6SMB51A P6SMB56A P6SMB62A P6SMB68A P6SMB75A P6SMB82A P6SMB91A P6SMB100A P6SMB110A P6SMB120A P6SMB130A P6SMB150A P6SMB160A P6SMB170A P6SMB180A P6SMB200A P6SMB220A P6SMB250A P6SMB300A P6SMB350A P6SMB400A P6SMB440A P6SMB480A P6SMB510A P6SMB540A DEVICE MARKING CODE UNI 6V8A 7V5A 8V2A 9V1A 10A 11A 12A 13A 15A 16A 18A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A 51A 56A 62A 68A 75A 82A 91A 100A 110A 120A 130A 150A 160A 170A 180A 200A 220A 250A 300A 350A 400A 440A 480A 510A 540A BI 6V8C 7V5C 8V2C 9V1C 10C 11C 12C 13C 15C 16C 18C 20C 22C 24C 27C 30C 33C 36C 39C 43C 47C 51C 56C 62C 68C 75C 82C 91C 100C 110C 120C 130C 150C 160C 170C 180C 200C 220C - BREAKDOWN MAXIMUM STAND-OFF TEST VOLTAGE REVERSE VOLTAGE CURRENT VBR AT IT (1) LEAKAGE VWM IT (V) AT VWM (mA) (V) ID (3) (A) MIN. MAX. 6.45 7.14 10 5.80 1000 7.13 7.88 10 6.40 500 7.79 8.61 10 7.02 200 8.65 9.55 1.0 7.78 50 9.50 10.5 1.0 8.55 10 10.5 11.6 1.0 9.40 5.0 11.4 12.6 1.0 10.2 5.0 12.4 13.7 1.0 11.1 5.0 14.3 15.8 1.0 12.8 1.0 15.2 16.8 1.0 13.6 1.0 17.1 18.9 1.0 15.3 1.0 19.0 21.0 1.0 17.1 1.0 20.9 23.1 1.0 18.8 1.0 22.8 25.2 1.0 20.5 1.0 25.7 28.4 1.0 23.1 1.0 28.5 31.5 1.0 25.6 1.0 31.4 34.7 1.0 28.2 1.0 34.2 37.8 1.0 30.8 1.0 37.1 41.0 1.0 33.3 1.0 40.9 45.2 1.0 36.8 1.0 44.7 49.4 1.0 40.2 1.0 48.5 53.6 1.0 43.6 1.0 53.2 58.8 1.0 47.8 1.0 58.9 65.1 1.0 53.0 1.0 64.6 71.4 1.0 58.1 1.0 71.3 78.8 1.0 64.1 1.0 77.9 86.1 1.0 70.1 1.0 86.5 95.5 1.0 77.8 1.0 95.0 105 1.0 85.5 1.0 105 116 1.0 94.0 1.0 114 126 1.0 102 1.0 124 137 1.0 111 1.0 143 158 1.0 128 1.0 152 168 1.0 136 1.0 162 179 1.0 145 1.0 171 189 1.0 154 1.0 190 210 1.0 171 1.0 209 231 1.0 185 1.0 237 263 1.0 214 1.0 285 315 1.0 256 1.0 333 368 1.0 300 1.0 380 420 1.0 342 1.0 418 462 1.0 376 1.0 456 504 1.0 408 1.0 485 535 1.0 434 1.0 513 567 1.0 459 1.0 MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) 57.1 53.1 49.6 44.8 41.4 38.5 35.9 33.0 28.3 26.7 23.8 21.7 19.6 18.1 16.0 14.5 13.1 12.0 11.1 10.1 9.3 8.6 7.8 7.1 6.5 5.8 5.3 4.8 4.4 3.9 3.6 3.4 2.9 2.7 2.6 2.4 2.2 1.8 1.74 1.45 1.24 1.10 1.00 0.91 0.86 0.81 MAXIMUM MAXIMUM CLAMPING TEMPERATURE VOLTAGE COEFFICIENT AT IPPM OF VBR VC (V) (%/C) 10.5 0.057 11.3 0.061 12.1 0.065 13.4 0.068 14.5 0.073 15.6 0.075 16.7 0.078 18.2 0.081 21.2 0.084 22.5 0.086 25.2 0.088 27.7 0.090 30.6 0.092 33.2 0.094 37.5 0.096 41.4 0.097 45.7 0.098 49.9 0.099 53.9 0.100 59.3 0.101 64.8 0.101 70.1 0.102 77.0 0.103 85.0 0.104 92.0 0.104 103 0.105 113 0.105 125 0.106 137 0.106 152 0.107 165 0.107 179 0.107 207 0.108 219 0.108 234 0.108 246 0.108 274 0.108 328 0.108 344 0.110 414 0.110 482 0.110 548 0.110 602 0.110 658 0.110 698 0.110 740 0.110 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types having V WM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE C62.35 (5) For the bi-directional SMAJ5.0CA, the maximum V BR is 7.25 V (6) V = 3.5 V at I = 50 A (uni-directional only) F F www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89283 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product P6SMB Series Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT RJA (1) 100 C/W RJL 20 C/W Typical thermal resistance, junction to ambient air Typical thermal resistance, junction to leads Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE P6SMB6.8A-M3/52 0.064 61 1800 7" diameter plastic tape and reel P6SMB6.8A-M3/5B 0.064 5A 7500 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 150 IPPM - Peak Pulse Current, % IRSM PPPM - Peak Pulse Power (kW) 100 10 1 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 s 1.0 s 10 s 100 s 1.0 ms Peak Value IPPM 100 Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. td 0 10 ms 0 td - Pulse Width (s) 1.0 2.0 3.0 4.0 t - Time (ms) Fig. 1 - Peak Pulse Power Rating Curve Fig. 3 - Pulse Waveform 6000 100 CJ - Junction Capacitance (pF) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s 75 50 25 0 Measured at Zero Bias 1000 VR, Measured at Stand-Off Voltage VWM 100 Uni-Directional Bi-Directional TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 10 0 25 50 75 100 125 150 175 200 1 10 100 TJ - Initial Temperature (C) VWM - Reverse Stand-Off Voltage (V) Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Fig. 4 - Typical Junction Capacitance Document Number: 89283 Revision: 20-Apr-11 200 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product P6SMB Series Vishay General Semiconductor 200 Peak Forward Surge Current (A) Transient Thermal Impedance (C/W) 100 10 1.0 0.1 0.001 8.3 ms Single Half Sine-Wave Uni-Directional Only 100 10 0.01 0.1 1 10 100 1000 100 10 1 tp - Pulse Duration (s) Number of Cycles at 60 Hz Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Maximum Non-Repetitive Forward Surge Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Mounting Pad Layout Cathode Band 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.220 REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89283 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 20-Apr-11 This document is subject to change without notice. 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