DVO) D alMKOXS [E17 IRF822,823 FIELD EFFECT POWER TRANSISTOR 500, 450 VOLTS Rps(ON) =400 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- ness and reliability. \a This design has been optimized to give superior performance = in most switching applications including: switching power =< s supplies, inverters, converters and solenoid/relay drivers. CASE STYLE T0-220AB as) Also, the extended safe operating area with good linear DIMENSION a o : 404(10,26) 551238 to914.83 transfer characteristics makes it well suited for many linear ~360(0.65) 4" OTS" 706.32) oy fe S551 SB} applications such as audio amplifiers and servo motors. it eo Opry BR) E Features : i rT TempERATURE Polysilicon gate Improved stability and reliability A geen fo zatDIA. f No secondary breakdown Excellent ruggedness | i | 72052) , . ole :908(0.18) e Ultra-fast switching Independent of temperature S i => BOT. Voltage controlled High transconductance ae waa e Low input capacitance Reduced drive requirement TERM3~| aa . e Excellent thermal stability Ease of paralleling SaIGS} Te ro pare 9561.98 el co 1016.39 22110.63) UNIT TYPE [Team iTERM.2 TERM.3 TAB POWER MOS FET T0-220-A6 GATE |ORAIN| SOURCE) DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF8&22 IRF8&23 UNITS Drain-Source Voltage / Voss 500 450 Volts Drain-Gate Voltage, Ras = 1M0 Vpar 500 450 Volts Continuous Drain Current @ To = 25C Ip 2.0 2.0 A Te = 100C 1.0 1.0 A Pulsed Drain Current lpm 8.0 8.0 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Pp 40 40 Watts Derate Above 25C - 0.32 0.32 w/e Operating and Storage , Junction Temperature Range Ty, Tsta -55 to 150 -55 to 150 c thermal characteristics Thermal Resistance, Junction to Case Raic 3.12 3.12 C/W Thermal Resistance, Junction to Ambient RaJa 80 80 C/W Maximum Lead Temperature for Soidering Purposes: % from Case for 5 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 223 electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL | MIN | TYP MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRF822 BVpss 500 _ _ Volts (Vgs = OV, Ip = 250 uA) IRF823 450 _ _ Zero Gate Voltage Drain Current Ipss (Vos = Max Rating, Vag = OV, To = 25C) _ _ 250 uA (Vps = Max Rating, 0.8, Vag = OV, To = 125C) ~ _ 1000 Ove poy Current lass _ _ +500 nA on characteristics* Gate Threshold Voltage To = 25C | Va@s(TH) 2.0 _ 4.0 Volts (Vps = Ves, Ip = 250 pA) On-State Drain Current (Vas = 10V, Vpg = 10V) ID(ON) 2 A Static Drain-Source On-State Resistance (Vag = 10V, Ip = 1.0A) Rps(ON) _ 3.5 4.0 Ohms Forward Transconductance (Vps = 10V, Ip = 1.0A) Sfs 8 Ww mhos dynamic characteristics Input Capacitance Vas = 10V Ciss ~ 380 400 pF Output Capacitance Vps = 25V Coss _ 60 150 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 10 40 pF switching characteristics* Turn-on Delay Time Vos = 225V ta(on) _ 15 _ ns Rise Time Ip = 1.0A, Vag = 16V tr _ 10 _ ns Turn-off Delay Time RGEN = 500, R@sg = 12.50 | _ ta(off) ~ 30 _ ns Fall Time (Res (Equiv.) = 100) tf 25 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ 2.0 A Pulsed Source Current Ism _ _ 8.0 A Diode Forward Voltage _ (To = 25C, Vag = OV, Ig = 2.0A) Vsp 1.0 18 Volts Reverse Recovery Time ter _ 410 _ ns (Ig = 2.5A, dl,/dt = 100A/usec, To = 125C) Qrar _ 2.4 _ uc *Pulse Test: Pulse width < 300 us, duty cycle < 2% 100 80 60 40 20 bane Ip. DRAIN CURRENT (AMPERES) IN THIS AREA MAY BE LIMITED BY R e 9o- b aM i SINGLE PULSE To 25C 0.2 O41 1 2 4 6 810 20 40 60 80100 Vps, DRAINSOURCE VOLTAGE (VOLTS} MAXIMUM SAFE OPERATING AREA 200 400 600 1000 224 2.4 22 CONDITIONS: Rps(On) CONDITIONS: Ip = 1.0 A, Vg = 10V 20 Ves(TH) CONDITIONS: ip = 250uA, Vos*Vas -- 1.8 1.6 1.4 12 1.0 0.8 0.6 Rosion) AND Vgseruy NORMALIZED 0.4 0.2 0 -40 0 40 80 Ty, JUNCTION TEMPERATURE (C) TYPICAL NORMALIZED Rogion; AND Vasirn VS. TEMP. 120 160