©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
PN100/PN100A/MMBT100/MMBT100A
Absolute Maximum Ratings* TC=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 45 V
VCBO Collector-Base Voltage 75 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector current - Continuous 500 mA
TJ, Tstg Junction and Storage Temperature -55 ~ +150 °C
Symbol Parameter Test Cond ition Min. Max. Units
Off Characteristics
BVCBO Collect or-B ase Break down Voltage IC = 10µA, IB = 0 75 V
BVCEO Collect or-E mit ter Brea kdown Voltage * IC = 1mA, IE = 0 45 V
BVEBO Emitter-Base Breakdown Voltage IC = 10µA, IC = 0 6.0 V
ICBO Emitter Cutoff Current VCB = 60V 50 nA
ICES Collector Cutoff Current VCE = 40V 50 nA
IEBO Emitter Cutoff Current VEB = 4V 50 nA
On Characteristics
hFE DC Current Gain IC = 100µA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V*
IC = 150mA, VCE = 5.0V *
100
100A
100
100A
100
100A
80
240
100
300
100
100
100
450
600
350
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 200mA, IB = 20mA 0.2
0.4 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 200mA, IB = 20mA 0.85
1.0 V
V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product VCE = 20V, IC = 20mA 250 MHz
Cobo Output Capacitance VCB = 5.0V, f = 1.0MHz 4.5 pF
NF Noise Figure IC = 100µA, VCE = 5.0V
RG = 2.0kΩ, f = 1.0KHz 100
100A 5.0
4.0 dB
dB
PN100/PN100A/MMBT100/MMBT100A
NPN General Purpose Amplifier
• This device is designed for general purpose amplifier
applications at collector currents to 300mA.
• Sourced from process 10.
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: N1/N1A
TO-92
1
1. Emitter 2. Base 3. Collector
©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
PN100/PN100A/MMBT100/MMBT100A
Thermal Charac teris tics TA=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06."
Symbol Parameter Max. Units
PN100
PN100A *MMBT100
*MMBT100A
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
PN100/PN100A/MMBT100/MMBT100A
Typical Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Vo ltage
vs Collector Current Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature Figure 6. Input and Output Capacitance
vs Reverse Voltag
10 20 30 50 100 200 300 500
0
100
200
300
400
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
Vce = 5V
β
110100400
0.1
0.2
0.3
0.4
I - CO LLECTOR CUR RE NT (m A)
V - COLL ECTOR- EMITTER VOL TAGE ( V)
C
CESAT
25 °C
- 4 0 °C
125 °C
β = 10
0.1 1 10 100 300
0.2
0.4
0.6
0.8
1
I - COLLE C TOR CUR RE NT ( m A)
V - COLL EC TOR-EM ITTER VO L TA GE ( V)
β
β
= 10
C
BESAT
25 °C
- 40 °C
125 °C
β
110100500
0.2
0.4
0.6
0.8
1
I - CO LLEC TO R CURRENT (m A)
V - B AS E-EMI TTER ON VO L TAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40 °C
125 °C
β
25 50 75 100 125 150
0.1
1
10
T - A MBIENT TEMPERAT UR E ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
V = 60V
°
CB
β
0.1 1 10 100
0.1
1
10
100
V - C OLLECT O R VOLTAG E (V)
CA PACITANCE (pF)
Cib
Cob
f = 1.0 MHz
ce
©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
PN100/PN100A/MMBT100/MMBT100A
Typical Characteristics (Continued)
Figure 7. Switching Times vs
Collector Current Figu r e 8. Power Dissipation v s
Ambient Temperature
10 20 30 50 100 200 300
0
30
60
90
120
150
180
210
240
270
300
I - COLLECTOR CURRENT (mA)
TIME (n S)
IB1 = IB2 = Ic / 10
V = 10 V
C
cc
ts
td
tftr
β
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
β
Package Dimensions
PN100/PN100A/MMBT100/MMBT100A
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
©2002 Fairchild Semiconductor Corporation Rev. B, November 2002
PN100/PN100A/MMBT100/MMBT100A
Package Dimensions (Continued)
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. I1
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device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
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Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
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