NPN General Purpose Amplifier 3 * This device is designed for general purpose amplifier applications at collector currents to 300mA. * Sourced from process 10. 2 TO-92 1 1. Emitter 2. Base 3. Collector SOT-23 Mark: N1/N1A 1. Base 2. Emitter 3. Collector 1 Absolute Maximum Ratings* TC=25C unless otherwise noted Symbol VCEO Collector-Emitter Voltage Parameter Value 45 Units V VCBO VEBO Collector-Base Voltage 75 V Emitter-Base Voltage 6.0 IC Collector current V 500 mA TJ, Tstg Junction and Storage Temperature -55 ~ +150 C - Continuous * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics TC=25C unless otherwise noted Symbol Parameter Off Characteristics Collector-Base Breakdown Voltage BVCBO Test Condition Min. Max. Units IC = 10A, IB = 0 75 V BVCEO Collector-Emitter Breakdown Voltage * IC = 1mA, IE = 0 45 V BVEBO Emitter-Base Breakdown Voltage IC = 10A, IC = 0 6.0 ICBO Emitter Cutoff Current VCB = 60V ICES Collector Cutoff Current IEBO Emitter Cutoff Current V 50 nA VCE = 40V 50 nA VEB = 4V 50 nA On Characteristics hFE DC Current Gain IC = 100A, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V* IC = 150mA, VCE = 5.0V * 100 100A 100 100A 100 100A 80 240 100 300 100 100 100 450 600 350 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 200mA, IB = 20mA 0.2 0.4 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA IC = 200mA, IB = 20mA 0.85 1.0 V V Small Signal Characteristics fT Current Gain Bandwidth Product VCE = 20V, IC = 20mA Cobo Output Capacitance VCB = 5.0V, f = 1.0MHz NF Noise Figure IC = 100A, VCE = 5.0V RG = 2.0k, f = 1.0KHz 250 100 100A MHz 4.5 pF 5.0 4.0 dB dB * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN100/PN100A/MMBT100/MMBT100A PN100/PN100A/MMBT100/MMBT100A Max. Symbol Parameter PN100 PN100A 625 5.0 PD Total Device Dissipation Derate above 25C RJC Thermal Resistance, Junction to Case 83.3 RJA Thermal Resistance, Junction to Ambient 200 *MMBT100 *MMBT100A 350 2.8 Units mW mW/C C/W 357 C/W * Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06." (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN100/PN100A/MMBT100/MMBT100A Thermal Characteristics TA=25C unless otherwise noted Vce = 5V 125 C 300 25 C 200 - 40 C 100 0 10 20 30 50 100 200 300 I C - COLLECTOR CURRENT (mA) 500 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN 400 1 0.8 - 40 C 25 C 0.6 125 C 0.4 = 10 0.2 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) = 10 0.3 25 C 0.2 125 C 0.1 - 40 C 1 300 - 40 C 0.8 0.6 25 C 125 C 0.4 V CE = 5V 0.2 1 10 100 I C - COLLECTOR CURRENT (mA) 500 Figure 4. Base-Emitter On Voltage vs Collector Current 100 10 f = 1.0 MHz CAPACITANCE (pF) VCB = 60V 1 0.1 25 400 1 Figure 3. Base-Emitter Saturation Voltage vs Collector Current I CBO - COLLE CTOR CURRENT (nA) 10 100 I C - COLLECTOR CURRENT (mA) Figure 2. Collector-Emitter Saturation Voltage vs Collector Current VBEON - BASE-EMITTER ON VOLTAGE (V) VBESAT - COLLECTOR-EMITTER VOLTAGE (V) Figure 1. Typical Pulsed Current Gain vs Collector Current 0.4 50 75 100 125 TA - AMBIE NT TEMP ERATURE ( C) Figure 5. Collector Cutoff Current vs Ambient Temperature (c)2002 Fairchild Semiconductor Corporation 150 10 Cib Cob 1 0.1 0.1 1 10 Vce - COLLECTOR VOLTAGE (V) 100 Figure 6. Input and Output Capacitance vs Reverse Voltag Rev. B, November 2002 PN100/PN100A/MMBT100/MMBT100A Typical Characteristics (Continued) 300 P D - POWER DISSIPATION (mW) 700 270 ts 240 TIME (nS) 210 180 IB1 = IB2 = Ic / 10 V cc = 10 V 150 120 90 tf 60 30 0 10 tr td 20 30 50 100 200 I C - COLLECTOR CURRENT (mA) Figure 7. Switching Times vs Collector Current (c)2002 Fairchild Semiconductor Corporation 300 600 500 TO-92 SOT-23 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 Figure 8. Power Dissipation vs Ambient Temperature Rev. B, November 2002 PN100/PN100A/MMBT100/MMBT100A Typical Characteristics PN100/PN100A/MMBT100/MMBT100A Package Dimensions TO-92 +0.25 4.58 0.20 4.58 -0.15 0.10 14.47 0.40 0.46 1.27TYP [1.27 0.20] 1.27TYP [1.27 0.20] 0.20 (0.25) +0.10 0.38 -0.05 1.02 0.10 3.86MAX 3.60 +0.10 0.38 -0.05 (R2.29) Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. B, November 2002 PN100/PN100A/MMBT100/MMBT100A Package Dimensions (Continued) 0.10 0.10 2.40 0.40 0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 0.03 +0.05 0.12 -0.023 0.96~1.14 0.97REF 2.90 0.10 0.95 0.03 0.95 0.03 1.90 0.03 0.508REF Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. 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Around the world.TM The Power FranchiseTM Programmable Active DroopTM ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2002 Fairchild Semiconductor Corporation Rev. I1