KSD-T0C061-000 2
2N5551CN
Absolute Maximum Ratings (Ta=25°C)
Characteristic Symbol Rating Unit
Collector-base voltage VCBO 180 V
Collector-emitter voltage VCEO 160 V
Emitter-base voltage VEBO 6 V
Collector current IC 600 mA
Collector power dissipation PC 400 mW
Junction temperature TJ 150
°C
Storage temperature range Tstg -55~150
°C
Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector-emitter breakdown voltage BVCEO I
C=1mA, IB=0 160 - - V
Collector cut-off current ICBO V
CB=180V, IE=0 - - 100 nA
Emitter cut-off current IEBO V
EB=6V, IC=0 - - 100 nA
DC current gain hFE (1) V
CE=5V, IC=1mA 80 - -
DC current gain hFE (2) V
CE=5V, IC=10mA 80 - 250 -
DC current gain hFE (3) V
CE=5V, IC=50mA 30 - -
Collector-emitter saturation voltage VCE(sat)(1)
* IC=10mA, IB=1mA - - 0.2 V
Collector-emitter saturation voltage VCE(sat)(2)
* IC=50mA, IB=5mA - - 0.5 V
Base-emitter saturation voltage VBE(sat)(1)
* IC=10mA, IB=1mA - - 1 V
Base-emitter saturation voltage VBE(sat)(2)* IC=50mA, IB=5mA - - 1 V
Base-emitter voltage VBE V
CE=5V, IC=10mA - 0.65 0.85 V
Transition frequency fT V
CE=10V, IC=10mA - 150 - MHz
Collector output capacitance Cob V
CB=10V, IE=0, f=1MHz - 3 - pF
* : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0%