2N7002A
Document number: DS31360 Rev. 12 - 2 1 of 6
www.diodes.com July 2013
© Diodes Incorporated
2N7002A
NEW PRODUCT
N-CHANNEL ENHAN CEMENT MODE MOSFET
Product Summary
V(BR)DSS R
DS(ON) max ID max
T
A
= +25°C
60V 6 @ VGS = 5V 200mA
Description
This MOSFET has been designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
Motor Control
Power Management Functions
Features and Benefits
N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1.2kV HBM
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
2N7002A-7 SOT23 3,000/Tape & Reel
2N7002A-13 SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
SOT23
Top View Equivalent Circuit Top View
Pin-Out
D
GS
ESD PROTECTED TO 1.2kV
Source
Gate
Protection
Diode
Gate
Drain
e3
2N7002A
Document number: DS31360 Rev. 12 - 2 2 of 6
www.diodes.com July 2013
© Diodes Incorporated
2N7002A
NEW PRODUCT
Marking Information
Date Code Key
Year 2008 2009 2010 2011 2012 2013 2014 2015
Code V W X Y Z A B C
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current (Note 5) VGS = 10V Steady
State
TA = +25°C
TA = +85°C
TA = +100°C ID 180
130
115 mA
Continuous Drain Current (Note 6) VGS = 10V Steady
State
TA = +25°C
TA = +85°C
TA = +100°C ID 220
160
140 mA
Maximum Continuous Body Diode Forward Current (Note 6) IS 0.5 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 800 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) PD 370 mW
(Note 6) 540
Thermal Resistance, Junction to Ambient (Note 5) RθJA 348 °C/W
(Note 6) 241
Thermal Resistance, Junction to Case (Note 6) RθJC 91
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
MN1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T Site Chengdu A/T Site
Y
M
Y
MN1
YM
MN1
YM
2N7002A
Document number: DS31360 Rev. 12 - 2 3 of 6
www.diodes.com July 2013
© Diodes Incorporated
2N7002A
NEW PRODUCT
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 60 70 V VGS = 0V, ID = 10µA
Zero Gate Voltage Drain Current @ TC = +25°C
@ TC = +125°C IDSS 1.0
500 µA VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ±10 µA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(th) 1.2 2.0 V
VDS = VGS, ID = 250µA
Static Drain-Source On-Resistance @ TJ = +25°C
@ TJ = +125°C RDS(ON) 3.5
3.0 6
5 VGS = 5.0V, ID = 0.115A
VGS = 10V, ID = 0.115A
Forward Transconductance gFS 80 mS VDS = 10V, ID = 0.115A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance Ciss 23 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 3.4 pF
Reverse Transfer Capacitance Crss 1.4 pF
Gate Resistance RG  260 400 VDS = 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time tD(ON) 10 ns VDD = 30V, ID = 0.115A, RL = 150,
VGEN = 10V, RGEN = 25
Turn-Off Delay Time tD(OFF) 33 ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subjec t to product testing.
0
0.1
0.2
0.3
0.4
0.5
0.6
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOL TAGE (V)
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0.01
0.1
1
12345
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = 5V
Pulsed
DS
2N7002A
Document number: DS31360 Rev. 12 - 2 4 of 6
www.diodes.com July 2013
© Diodes Incorporated
2N7002A
NEW PRODUCT
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
1
2
3
4
5
6
7
8
9
0 0.1 0.2 0.3 0.4 0.5 0.6
V = 5V
GS
V = 10V
GS
0
0.5
1.0
1.5
2.0
2.5
Fig . 5 Gate Th re shold Variation vs. Am bi ent Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
V , GAT E THRESH OLD VOLTAGE ( V)
GS(TH)
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
1.0
I = 250µA
D
Fig. 6 Typical Total Capacitance
V , DRAIN-SOURCE VOL TAGE (V)
DS
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
1
10
100
0 5 10 15 20 25 30 35 40
C
iss
C
oss
C
rss
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
V , SOURCE-DRAIN VOLTAGE (V)
SD
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A)
S
0.0001
0.001
0.01
0.1
1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
2N7002A
Document number: DS31360 Rev. 12 - 2 5 of 6
www.diodes.com July 2013
© Diodes Incorporated
2N7002A
NEW PRODUCT
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
 0° 8° -
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
A
M
JL
D
F
BC
H
K
G
K1
XE
Y
C
Z
2N7002A
Document number: DS31360 Rev. 12 - 2 6 of 6
www.diodes.com July 2013
© Diodes Incorporated
2N7002A
NEW PRODUCT
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