SEMICONDUCTOR BC549/550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURE *For Complementary with PNP Type BC559/560. MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT 30 BC549 VCBO Collector-Base Voltage V BC550 50 BC549 30 VCEO Collector-Emitter Voltage V BC550 45 VEBO 5 V Collector Current IC 100 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55150 Emitter-Base Voltage Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL Collector-Emitter BC549 Breakdown Voltage BC550 Collector-Base BC549 Breakdown Voltage BC550 V(BR)CEO V(BR)CBO Emitter-Base Breakdown Voltage Collector Cut-off Current TEST CONDITION MIN. TYP. MAX. 30 - - 45 - - 30 - - 50 - - IC=10mA, IB=0 UNIT V IC=10A, IE=0 V V(BR)EBO IE=10A, IC=0 5.0 - - V ICBO VCB=30V, IE=0 - - 15 nA hFE(Note) IC=2mA, VCE=5V 110 - 800 Base-Emitter Voltage VBE(ON) IC=2mA, VCE=5V 0.55 - 0.7 V Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=5mA - - 0.6 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=5mA - 0.9 - V IC=10mA, VCE=5V, f=100MHz - 300 - MHz VCB=10V, IE=0, f=1MHz - - 4.5 pF IC=200A, VCE=5V - - 4.0 Rg=10k, f=1kHz - - 10 DC Current Gain fT Transition Frequency Cob Collector Output Capacitance BC549 Noise Figure NF BC550 Note : hFE Classification A:110220, 1999. 11. 30 B:200450, Revision No : 2 dB C:420800 1/1