131A Ae ee IA mE ane Fame on gem, -SAMSUNG SEMICONDUCTOR INC ME D Pescara goo0?e.99 BCW72 .NPN EPITAXIAL SILICON TRANSISTOR 2-29 -1F SOT-23 GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic - Symbol Rating Unit Collector-Base Voltage. Veo 50 Vv Collector-Emitter Voitage Veco 46 v Emitfer-Base Voltage Veco 5 Vv Collector Current ic 100 mA . Collector Dissipation Po 350 mW Storage Temperature Tstg 150 C * Refer to MMBT5088 for graphs 1, Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T,=25C) Characteristic Symbot Test Condition , Min Typ Max Unit i Collector-Base Breakdown Voltage BV ceo Ic=10pA, le=0 50 Vv : Collector-Emitter Breakdown Voltage | BVcco lc=2mA, lg=0 46 v ! Collector-Emitter Breakdown Voltage | BVces lc=2mA, Veg=O | 45 v j Emitter-Base Breakdown Voltage BVeso le=10pA, k=O 5 Vv } Collector Cutoff Current lego Vep=20V, le=O 100 | nA ; DC Current Gain bee Vce= SV, Ie=2mA 200 450 : Collector-Emitter Saturation Voltage Vce (Sat) | Ic=10mA, lp=O.5mA 0.25 Vv i . [c=50mA, Ip=2.5mMA 0.21 Vv : Base-Emitter Saturation Voltage Vee (sat) | le=50mA, lg=2.5mA 0.85 [: Vv : Base-Emitter On Voltage Vee (on) lc=2mA, Vce=5V > O06 0.75 Vv : Current Gain-Bandwidth Product - fr Ic= TOMA, Vce=5V 300 MHz : f=35MHz : ! Output Capacitance Cob Veo=10V, Ie=0 4 pF I . f=1MHz ! Noise Figure NF Ic=0.2mA, Vee=5V . 10 dB i As=2KQ, f=1KHz Marking A K 2 tS ce SAMSUNG SEMICONDUCTOR: 489