HER201G THRU HER208G
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Yangzhou Yangjie Electronic Technology Co., Ltd.
S-A094
Rev. 2.5, 30-Jan-21
www.21yangjie.com
High Efficient Rectifier
Features
● High efficiency
● High current capability
● High Reliability
● High surge current capability
● Glass passivated chip junction
● Solder dip 275 °C max. 7 s, per JESD 22-B106
Mechanical Data
● Package: DO-204AC(DO-15)
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
● Polarity:Color band denotes cathode end
■Maximum Ratings (Ta=25℃ Unless otherwise specified)
PARAMETER SYMBOL UNIT HER201
G
HER202
G
HER203
G
HER204
G
HER205
G
HER206
G
HER207
G
HER208
G
Device marking code
HER201
G
HER202
G
HER203
G
HER204
G
HER205
G
HER206
G
HER207
G
HER208
G
Maximum Repetitive Peak Reverse Voltage VRRM V 50 100 200 300 400 600 800 1000
Maximum RMS Voltage VRMS V 35 70 140 210 280 420 560 700
Maximum DC blocking Voltage VDC V 50 100 200 300 400 600 800 1000
Average Forward Current
@60Hz sine wave, Resistance load, Ta=75℃ IF(AV) A 2.0
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Tj=25℃
IFSM A
60
Forward Surge Current (Non-repetitive)
@1ms, square wave, 1 cycle, Tj=25℃ 100
Current squared time
@1ms≤t8.3≤ms Tj=25℃,Rating of per diode I2t A2s 15
Typical junction capacitance
@Measured at 1MHz and Applied Reverse
Voltage of 4.0 V.D.C
Cj pF 28 17 12
Storage Temperature Tstg ℃ -55 ~ +150
Junction Temperature Tj ℃ -55 ~ +150
■Electrical Characteristics(Ta=25℃ Unless otherwise specified)
PARAMETER SYMBOL UNIT TEST CONDITIONS HER201
G
HER202
G
HER203
G
HER204
G
HER205
G
HER206
G
HER207
G
HER208
G
Maximum instantaneous
forward voltage drop per diode VF V IFM=2.0A 1.0 1.3 1.7
Maximum DC reverse current at
rated DC blocking voltage per
diode
IR μA
Tj =25℃ 2.5
Tj =125℃ 100
Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A,
Irr=0.25A 50 75
COMPLIANT
RoHS