HEXFET® Power MOSFET
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
A
= 25°C
Continuous Drain Current, VGS @ 10V
I
D
@ T
A
= 70°C
Continuous Drain Current, VGS @ 10V
I
DM Pulsed Drain Current
c
P
D
@T
A
= 25°C
Power Dissipation
Linear Derating Factor mW/°C
V
GS Gate-to-Source Voltage
V
E
AS Single Pulse Avalanche Energy
g
mJ
dv/dt Peak diode Recovery dv/dt
d
V/ns
T
J ,
T
STG Junction and Storage Temperature Range °C
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θJA Maximum Junction-to-Ambient
f
–––
230
°C/W
3.9
A
5.0
540
4.3
±20
Max.
1.2
0.93
7.3
-55 to + 150
D
S
G
3
1
2
Micro3™
IRLML2803PbF-1
Features Benefits
Industry-standard pinout SOT-23 Package ⇒Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant, Halogen-Free Environmentally Friendlier
MSL1, Industrial qualification Increased Reliability
Form Quantity
IRLML2803TRPbF-1 Micro3
™
(SOT-23) Tape and Reel 3000 IRLML2803TRPbF-1
Package Type
Standard Pack
Orderable Part NumberBase Part Number
VDS 30 V
RDS(on) max
(@V
GS
= 10V)
0.25
Qg (typical) 3.3 nC
ID
(@T
A
= 25°C)
1.2 A
Ω
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 28, 2014
IRLML2803PbF-1
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 28, 2014
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30   V VGS = 0V, ID = 250µA
ΔV(BR)DSS/ΔT
JBreakdown Voltage Temp. Coefficient  0.029 V/°C Reference to 25°C, ID = 1mA
  0.25 VGS = 10V, ID = 0.91A
  0.40 VGS = 4.5V, ID = 0.46A
VGS(th) Gate Threshold Voltage 1.0   V VDS = VGS, ID = 250µA
gfs Forward Transconductance 0.87   S VDS = 10V, ID = 0.46A
  1.0 VDS = 24V, VGS = 0V
  25 VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage   -100 VGS = -20V
Gate-to-Source Reverse Leakage   100 VGS = 20V
QgTotal Gate Charge  3.3 5.0 ID = 0.91A
Qgs Gate-to-Source Charge  0.48 0.72 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge  1.1 1.7 VGS = 10V, See Fig. 6 and 9
td(on) Turn-On Delay Time  3.9  VDD = 15V
trRise Time  4.0  ID = 0.91A
td(off) Turn-Off Delay Time  9.0  RG = 6.2Ω
tfFall Time  1.7  RD = 16Ω, See Fig. 10
Ciss Input Capacitance  85  VGS = 0V
Coss Output Capacitance  34  pF VDS = 25V
Crss Reverse Transfer Capacitance  15   = 1.0MHz, See Fig. 5
Ω
µA
nA
ns
IGSS
IDSS Drain-to-Source Leakage Current
RDS(on) Static Drain-to-Source On-Resistance
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage   1.2 V TJ = 25°C, IS = 0.91A, VGS = 0V
trr Reverse Recovery Time  26 40 ns TJ = 25°C, IF = 0.91A
Qrr Reverse RecoveryCharge  22 32 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
A
  7.3
  0.54
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 0.91A, di/dt ≤ 120A/µs, VDD ≤ V
(BR)DSS,
TJ ≤ 150°C
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Limited by TJmax, starting TJ = 25°C, L = 9.4mH, RG = 25Ω, IAS = 0.9A.
Surface mounted on FR-4 board, t ≤ 5sec.
IRLML2803PbF-1
3 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 28, 2014
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
0.1 1 10
20μs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
0.1
1
10
0.1 1 10
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20μs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 0.91A
D
0.1
1
10
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 10V
20μs PULSE WIDTH
DS
IRLML2803PbF-1
4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 28, 2014
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
20
40
60
80
100
120
140
160
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0.0 1.0 2.0 3.0 4.0 5.0
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
I = 0.91A
V = 24V
V = 15V
D
DS
DS
0.1
1
10
0.4 0.6 0.8 1.0 1.2 1.4
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
0.1
1
10
100
1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150°C
Single Pulse
1ms
10ms
A
A
J
100μs
10μs
IRLML2803PbF-1
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 28, 2014
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
VDS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
+
-
Fig 9a. Basic Gate Charge Waveform
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Q
G
Q
GS
Q
GD
V
G
Charge
10V
Fig 9b. Gate Charge Test Circuit
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRLML2803PbF-1
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 28, 2014
Fig 13. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150
Starting TJ, Junction Temperature (°C)
0
2
4
6
8
10
12
14
16
18
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 0.57A
0.75A
BOTTOM 0.90A
IRLML2803PbF-1
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 28, 2014
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
0.08
0.88
0.01
0.89
0.95 B S C
MI L L IME T E R S
MIN
e
E
E1
D
L
A
A1
A2
c
M
O
B
S
Y
MI NMAX MAX
.036
.0375 B S C
DIME NS IONS
INCHE S
b0.30
bbb
0.15
.008
ccc .006
0.25 BS CL1
L 0.40 0.60
.0118 B S C
aaa
0.20
.004
0° 8° 8°0°
2.80
1.20
0
E1
E
D5
6
3
12 ccc C B A
B5
6
e
e1
A2
A
A1
bbb C A B
3X b aaa C
3 S URF 0
3X L
L1
H4
7
2.10
e1 1.90 B S C .075 B S C
.0119
.0032
.111
.083
.048 .055
.119
.103
.0196
.0078
.0039
.044
.0004
.035 .040
.0236.0158
1.02
0.20
0.50
2.64
3.04
1.40
1.12
0.10
0.10
1.90
[.075]
0.95
[.0375]
0.972
[.038]
2.742
[.1079]
0.802
[.031]
R E COMME NDE D F OOT PR INT
3X
3X
NOT E S
1. DIME NS IONING AND T OL E RANCING PE R ASME Y14. 5M-1 994.
4 DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5 D AT U M A AND B T O B E DE T E RMI N E D AT DAT U M P L AN E H .
6 D I ME NS I ON S D AND E 1 AR E ME AS UR ED AT DAT U M P L ANE H .
2. DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES.
3. CONTROLLING DIMENSION: MILLIMETER.
7 DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUT LI NE CONFORMS TO JE DE C OU T LINE T O- 236AB.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
F = IRLML6401
AA27
LOT CODE
LEAD FREE
DATE CODE
E = IRLML6402
X = PART NUMBER CODE REFERENCE:
D = IRLML5103
C = IRLML6302
B = IRLML2803
A = IRLML 2402
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
W = (27-52) IF PRECEDED BY A LETTER
Y
8
3
1
2
5
4
7
6
0
9
Y
C03
WORK
WE E K
01
02
A
W
B
04 D
24
26
25
X
Z
Y
WORK
WE E K W
H = IRLML5203
G = IRLML2502
K
H
G
F
E
D
C
B
J
Y51
29
28
30
C
B
D
50 X
52 Z
Note: A li ne above th e wor k week
(as shown here) indicates Lead - Free.
I = IRLML0030
J = IRL ML2030
L = IRLML0060
M = IRLML0040
K = IRLML0100
N = IRLML2060
P = IRLML9301
R = IRLML9303
Cu WI R E
HALOGEN FREE
PART NUMBER
X = IRLML2244
W = IRF ML8244
V = IR L ML6346
U = IRLML6344
T = IRLML6246
S = IRLML6244
Z = IR FML9244
Y = IRLML2246
INDUSTRIAL VERS ION
2007
YEAR
2003
2001
2002
2005
2004
2006
2007
2009
2008
2010
2003
2001
YEAR
2002
2005
2004
2006
2009
2008
2010
2017
2013
2011
2012
2015
2014
2016
2017
2019
2018
2020
2013
2011
2012
2015
2014
2016
2019
2018
2020
IRLML2803PbF-1
8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 28, 2014
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Micro3™ Tape & Reel Information (Dimensions are shown in millimeters (inches))
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
MS L 1
(per JE DEC
J-S T D-020D
††
)
RoHS c ompliant
Yes
Qualification information
†
Qualification level
Industrial
(per JEDEC JESD47F
††
guidelines)
Moisture Sensitivity Level Micro3™ (SOT-23)
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Revision History
Date Comment
10/28/2014
•
Updated partmarking to reflect Industrial partmarking on page 7.