IRLML2803PbF-1 HEXFET(R) Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25C) 30 V 0.25 3.3 nC 1.2 A G 1 3 D S 2 Micro3TM Features Industry-standard pinout SOT-23 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRLML2803TRPbF-1 Micro3TM (SOT-23) Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRLML2803TRPbF-1 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS EAS dv/dt TJ ,TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak diode Recovery dv/dt Junction and Storage Temperature Range mW 4.3 20 3.9 mW/C V mJ 5.0 -55 to + 150 V/ns C c d g Units 1.2 0.93 7.3 540 A Thermal Resistance Parameter RJA 1 Maximum Junction-to-Ambient f www.irf.com (c) 2014 International Rectifier Typ. Max. Units --- 230 C/W Submit Datasheet Feedback October 28, 2014 IRLML2803PbF-1 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) g fs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 30 1.0 0.87 Typ. 0.029 3.3 0.48 1.1 3.9 4.0 9.0 1.7 85 34 15 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.25 VGS = 10V, ID = 0.91A 0.40 VGS = 4.5V, ID = 0.46A V VDS = VGS, ID = 250A S VDS = 10V, ID = 0.46A 1.0 VDS = 24V, VGS = 0V A 25 VDS = 24V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V 5.0 ID = 0.91A 0.72 nC VDS = 24V 1.7 VGS = 10V, See Fig. 6 and 9 VDD = 15V ID = 0.91A ns RG = 6.2 RD = 16, See Fig. 10 VGS = 0V pF VDS = 25V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units 0.54 7.3 26 22 1.2 40 32 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 0.91A, VGS = 0V TJ = 25C, IF = 0.91A di/dt = 100A/s D G Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 0.91A, di/dt 120A/s, VDD V(BR)DSS, TJ 150C 2 Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 5sec. Limited by TJmax, starting TJ = 25C, L = 9.4mH, RG = 25, IAS = 0.9A. www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback October 28, 2014 S IRLML2803PbF-1 10 10 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 1 3.0V 20s PULSE WIDTH TJ = 25C A 0.1 0.1 1 1 3.0V 20s PULSE WIDTH TJ = 150C A 0.1 10 0.1 1 V DS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 10 TJ = 25C TJ = 150C 1 0.1 3.0 V DS = 10V 20s PULSE WIDTH 3.5 4.0 4.5 5.0 5.5 6.0 A 6.5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 10 V DS, Drain-to-Source Voltage (V) www.irf.com (c) 2014 International Rectifier I D = 0.91A 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback A 100 120 140 160 October 28, 2014 IRLML2803PbF-1 160 120 V GS , Gate-to-Source Voltage (V) 140 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 12 Coss 80 60 Crss 40 V DS = 24V V DS = 15V 16 Ciss 100 I D = 0.91A 20 0 1 10 100 8 4 0 0.0 A VDS , Drain-to-Source Voltage (V) 1.0 2.0 3.0 4.0 A 5.0 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) FOR TEST CIRCUIT SEE FIGURE 9 TJ = 150C 1 TJ = 25C 10 10s 100s 1 1ms VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 A 1.4 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 www.irf.com (c) 2014 International Rectifier TA = 25C TJ = 150C Single Pulse 0.1 1 10ms A 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback October 28, 2014 IRLML2803PbF-1 10V QGS RD V DS QG VGS QGD D.U.T. RG VG + - VDD 10V Pulse Width 1 s Duty Factor 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 50K 90% .2F 12V .3F + V - DS D.U.T. 10% VGS VGS 3mA td(on) IG tr t d(off) tf ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 0.05 10 0.02 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) 1 0.1 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback October 28, 2014 IRLML2803PbF-1 15V EAS, Single Pulse Avalanche Energy (mJ) D.U.T RG VGS 20V DRIVER L VDS 18 + V - DD IAS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp ID 0.57A 0.75A BOTTOM 0.90A 16 TOP 14 12 10 8 6 4 2 0 25 50 75 100 125 150 Starting T J, Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy vs. Drain Current Fig 12b. Unclamped Inductive Waveforms D.U.T Driver Gate Drive + - P.W. + D.U.T. ISD Waveform Reverse Recovery Current + * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - Period V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 13. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs 6 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback October 28, 2014 IRLML2803PbF-1 Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are shown in millimeters (inches) S Y M B O L 6 5 D 3 6 1 ccc 2 B e A A1 A2 b c E E1 DIME NSIONS MILLIME T ERS MAX MIN 1.12 0.89 0.10 0.01 1.02 0.88 0.50 0.30 0.20 0.08 3.04 2.80 2.64 2.10 1.40 1.20 0.95 BSC 1.90 BSC 0.40 0.60 0.25 BS C 0 8 0.10 0.20 0.15 C B A D E E1 e 5 e1 L L1 0 aaa e1 bbb ccc 4 INCHES MIN MAX .036 .044 .0004 .0039 .035 .040 .0196 .0119 .0078 .0032 .119 .111 .103 .083 .048 .055 .0375 BSC .075 BSC .0158 .0236 .0118 BSC 0 8 .004 .008 .006 H A A2 L1 3X b A1 aaa C bbb C A B 3 S URF 0 7 3X L RECOMMENDED FOOT PRINT NOT ES 1. DIMENS IONING AND T OLERANCING PER ASME Y14.5M-1994. 0.972 3X [.038] 2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES . 3. CONT ROLLING DIMENS ION: MILLIMET ER. 2.742 [.1079] 4 DATUM PLANE H IS LOCATED AT T HE MOLD PART ING LINE. 5 DATUM A AND B T O B E DET ERMINED AT DAT UM PLANE H. 6 DIMENS IONS D AND E1 ARE MEAS URED AT DAT UM PLANE H. 7 DIMENS ION L IS T HE LEAD LENGTH FOR S OLDERING T O A S UBS T RATE. 8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB. 0.95 [.0375] 0.802 3X [.031] 1.90 [.075] Micro3 (SOT-23 / TO-236AB) Part Marking Information W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR DATE CODE PART NUMBER LEAD FREE INDUS TRIAL VERS ION Cu WIRE HALOGEN FREE LOT CODE X = PART NUMBER CODE REFERENCE: A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0100 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML9301 R = IRLML9303 S = IRLML6244 T = IRLML6246 U = IRLML6344 V = IRLML6346 W = IRFML8244 X = IRLML2244 Y = IRLML2246 Z = IRFML9244 Note: A line above the work week (as s hown here) indicates Lead - Free. YEAR 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK W 01 02 03 04 A B C D 24 25 26 X Y Z W = (27-52) IF PRECEDED BY A LETTER YEAR 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback October 28, 2014 IRLML2803PbF-1 Micro3TM Tape & Reel Information (Dimensions are shown in millimeters (inches)) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.32 ( .051 ) 1.12 ( .045 ) 1.85 ( .072 ) 1.65 ( .065 ) 4.1 ( .161 ) 3.9 ( .154 ) TR 3.55 ( .139 ) 3.45 ( .136 ) FEED DIRECTION 4.1 ( .161 ) 3.9 ( .154 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package Qualification information Industrial Qualification level (per JEDE C JE S D47F Moisture Sensitivity Level Micro3TM (SOT-23) RoHS compliant guidelines) MS L1 (per JEDE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release Revision History Date 10/28/2014 Comment * Updated partmarking to reflect Industrial partmarking on page 7. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback October 28, 2014