© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 4
1Publication Order Number:
MJB41C/D
MJB41C,
NJVMJB41CT4G (NPN),
MJB42C,
NJVMJB42CT4G (PNP)
Complementary Silicon
Plastic Power Transistors
D2PAK for Surface Mount
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Electrically the Same as TIP41 and T1P42 Series
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
PbFree Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Voltage
ÎÎÎ
ÎÎÎ
VCEO
ÎÎÎÎ
ÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorBase Voltage
ÎÎÎ
ÎÎÎ
VCB
ÎÎÎÎ
ÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
EmitterBase Voltage
ÎÎÎ
ÎÎÎ
VEB
ÎÎÎÎ
ÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current Continuous
Peak
ÎÎÎ
ÎÎÎ
IC
ÎÎÎÎ
ÎÎÎÎ
6.0
10
ÎÎÎ
ÎÎÎ
Adc
Base Current IB2.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
ÎÎÎ
ÎÎÎ
ÎÎÎ
PD
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
65
0.52
ÎÎÎ
ÎÎÎ
ÎÎÎ
W
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
PD
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
2.0
0.016
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
W
W/_C
Unclamped Inductive Load Energy (Note 1) E 62.5 mJ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎ
ÎÎÎ
TJ, Tstg
ÎÎÎÎ
ÎÎÎÎ
65 to +150
ÎÎÎ
ÎÎÎ
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎ
ÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, JunctiontoCase
ÎÎÎ
ÎÎÎ
RqJC
ÎÎÎÎ
ÎÎÎÎ
1.92
ÎÎÎ
ÎÎÎ
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance,
JunctiontoAmbient
ÎÎÎ
ÎÎÎ
ÎÎÎ
RqJA
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
62.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance,
JunctiontoAmbient (Note 2)
ÎÎÎ
ÎÎÎ
RqJA
ÎÎÎÎ
ÎÎÎÎ
50
ÎÎÎ
ÎÎÎ
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Maximum Lead Temperature for Soldering
Purposes, 1/8 from Case for 10 Seconds
ÎÎÎ
ÎÎÎ
ÎÎÎ
TL
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
260
ÎÎÎ
ÎÎÎ
ÎÎÎ
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
Device Package Shipping
ORDERING INFORMATION
D2PAK
CASE 418B
STYLE 1
MARKING
DIAGRAM
J4xCG
AYWW
COMPLEMENTARY SILICON
POWER TRANSISTORS
6 AMPERES,
100 VOLTS, 65 WATTS
J4xC = Specific Device Code
x = 1 or 2
A = Assembly Location
Y = Year
WW = Work Week
G= PbFree Package
MJB41CT4G D2PAK
(PbFree)
800 / Tape &
Reel
http://onsemi.com
MJB42CT4G D2PAK
(PbFree)
800 / Tape &
Reel
MJB42CG D2PAK
(PbFree)
50 Units / Rail
MJB41CG D2PAK
(PbFree)
50 Units / Rail
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NJVMJB41CT4G D2PAK
(PbFree)
800 / Tape &
Reel
NJVMJB42CT4G D2PAK
(PbFree)
800 / Tape &
Reel
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Sustaining Voltage (Note 3) (IC = 30 mAdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
VCEO(sus)
100
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
ICEO
0.7
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current (VCE = 100 Vdc, VEB = 0)
ÎÎÎÎ
ÎÎÎÎ
ICES
100
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
IEBO
50
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
hFE
30
15
75
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CollectorEmitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc)
ÎÎÎÎ
ÎÎÎÎ
VCE(sat)
1.5
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
BaseEmitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
VBE(on)
2.0
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
CurrentGain Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
ÎÎÎÎ
ÎÎÎÎ
fT
3.0
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎ
ÎÎÎÎ
hfe
20
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
Figure 1. Power Derating
T, TEMPERATURE (°C)
0 100
0
20
160
40
60
60 80
40 140
80
Figure 2. Switching Time Test Circuit
0.06
Figure 3. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
0.02
0.4 6.0
0.07
1.0
4.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
t, TIME (s)μ
0.5
0.3
0.1
0.05
0.1 0.6 1.0
td @ VBE(off) 5.0 V
0.03
0.7
2.0
0.2 2.0
tr
20 120
PD, POWER DISSIPATION (WATTS)
TC
TC
0
1.0
2.0
3.0
4.0
TA
TA
+11 V
25 ms
0
-9.0 V
RB
-4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf 10 ns
DUTY CYCLE = 1.0%
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
0.2
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
http://onsemi.com
3
t, TIME (ms)
1.0
0.01
0.01
0.1
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 1.0 100
ZqJC(t) = r(t) RqJC
RqJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.2
0.05
DUTY CYCLE, D = t1/t2
Figure 4. Thermal Response
0.1
0.05
0.02
0.01
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10 205.0 60 100
Figure 5. ActiveRegion Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
THERMAL LIMITATION @ TC = 25°C
(SINGLE PULSE)
1.0ms
2.0
1.0
10
5.0
IC, COLLECTOR CURRENT (AMP)
0.5ms
CURVES APPLY BELOW RATED VCEO
3.0
0.3
40 80
5.0ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1 0.4 0.6 4.00.06 1.0 2.00.2
IC, COLLECTOR CURRENT (AMP)
Figure 6. TurnOff Time
5.0
t, TIME (s)μ
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
6.0 1.0 3.0 5.0 200.5 102.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
C, CAPACITANCE (pF)
200
100
70
50
30
30 50
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2 Cib
Cob
3.0
ts
tf
TJ = 25°C
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
http://onsemi.com
4
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
103
-0.3
101
100
10-2
102
10-1
10-3
10M
100k
10k
0.1k
1.0M
1.0k
IB, BASE CURRENT (mA)IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
300
500
0.1 0.2 0.4 6.00.06
100
70
50
30
10
7.0
0.3
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 10. “On” Voltages
VCE = 2.0 V
5.0 1.0 2.00.6
1.6
2.0
20 30 100 100010
0.8
0.4
50
0300 500200
25°C
TJ = 150°C
-55°C
1.2
2.0
0.06
IC, COLLECTOR CURRENT (AMP)
1.6
0.8
1.2
0.4
00.1 0.2 0.3 0.4 0.6 1.0
+2.5
IC = 1.0 A
20 60 80 100 120 16014040
V, VOLTAGE (VOLTS)
TJ = 25°C
2.5 A 5.0 A
2.0 3.0 4.0 6.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 10
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.0
+1.5
+1.0
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
*APPLIES FOR IC/IB hFE/4
*qVC FOR VCE(sat)
qVB FOR VBE
Figure 11. Temperature Coefficients
, COLLECTOR CURRENT (A)μIC
-0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
Figure 12. Collector CutOff Region Figure 13. Effects of BaseEmitter Resistance
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
IC = ICES
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
VCE = 30 V
IC = 10 x ICES
IC ICES
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
200
20
4.0
0.06 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 6.0
+25°C to +150°C
-55°C to +25°C
+25°C to +150°C
-55°C to +25°C
+0.7
TJ = 25°C
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
http://onsemi.com
5
PACKAGE DIMENSIONS
SEATING
PLANE
S
G
D
T
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
B
M
B
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B01 THRU 418B03 OBSOLETE,
NEW STANDARD 418B04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
M
L
F
M
L
F
VARIABLE
CONFIGURATION
ZONE RN P
U
VIEW WW VIEW WW VIEW WW
123
D2PAK 3
CASE 418B04
ISSUE K
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
8.38
5.080
DIMENSIONS: MILLIMETERS
PITCH
2X
16.155
1.016
2X
10.49
3.504
MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP)
http://onsemi.com
6
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