1CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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ISL2110, ISL2111
100V, 3A/4A Peak, High Frequency
Half-Bridge Drivers
The ISL2110, ISL2111 are 100V, high frequency, half-bridge
N-Channel power MOSFET driver ICs. They ar e based on
the popular HIP2100, HIP2101 hal f-bridge drivers, but offer
several performance improvements. Peak output pull-up/
pull-down current has been increased to 3A/4A, whic h
significantly reduces switching power losses and eliminates
the need for external totem-pole buffers in many
applications. Also, the low end of the VDD operational supply
range has been extended to 8VDC. The ISL2110 has
additional input hysteresis for superior operation in noisy
environments and the inputs of the ISL2111, like those of the
ISL2110, can now safely swing to the VDD supply rail.
Features
Drives N-Channel MOSFET Half-Bridge
SOIC, DFN and TDFN Package Options
SOIC, DFN and TDFN Packages Compliant with 100V
Conductor Spacing Guidelines per IPC-2221
Pb-Free (RoHS Compliant)
Bootstrap Supply Max Voltage to 114VDC
On-Chip 1W Bootstrap Diode
Fast Propagation Times for Multi-MHz Circuits
Drives 1nF Load with Typical Rise/Fall Times of 9ns/7.5ns
CMOS Compatible Input Thresholds (ISL2110)
3.3V/TTL Compatible Input Thresholds (ISL2111)
Independent Inputs Provide Flexibility
No Start-Up Problems
Outputs Unaffected by Supply Glitches, HS Ringing Below
Ground or HS Slewing at High dv/dt
Low Power Consumption
Wide Supply Voltage Range (8V to 14V)
Supply Undervoltage Protection
1.6W/1W Typical Output Pull-Up/Pu ll-Down Resistance
Applications
Telecom Half-Bridge DC/DC Converters
Telecom Full-Bridge DC/DC Converters
Two-Switch Forward Converters
Active-Clamp Forward Converters
Class-D Audio Amplifiers
Ordering Information
PART
NUMBER
(Notes 1, 2) PART
MARKING
TEMP
RANGE
(°C) PACKAGE
(Pb-Free) PKG.
DWG. #
ISL2110ABZ 2110 ABZ -40 to +125 8 Ld SOIC M8.15
ISL2110AR4Z 211 0AR4Z -40 to +125 12 Ld 4x4 DFN L12.4x4A
ISL2111ABZ 2111 ABZ -40 to +125 8 Ld SOIC M8.15
ISL2111AR4Z 211 1AR4Z -40 to +125 12 Ld 4x4 DFN L12.4x4A
ISL2111ARTZ 211 1ARTZ -40 to +125 10 Ld 4x4 TDFN L10.4x4
ISL2111BR4Z 211 1BR4A -40 to +125 8 Ld 4x4 DFN L8.4x4
NOTES:
1. Add “-T*” suffix for t ape and reel. Please refer to TB347 for details
on reel specifications.
2. These Intersil Pb-free plastic packaged products employ special
Pb-free material sets, molding compounds/die attach materials,
and 100% matte tin plate plus anneal (e3 termination finish, which
is RoHS compliant and compatible with both SnPb and Pb-free
soldering operations). Intersil Pb-free products are MSL classified
at Pb-free peak reflow temperatures that meet or exceed the
Pb-free requirements of IPC/JEDEC J STD-020.
3. For Moisture Sensitivity Level (MSL), please see device information
page for ISL2110, ISL2111. For more information on MSL please
see techbrief TB363.
Data Sheet March 8, 2012 FN6295.6
2FN6295.6
March 8, 2012
Application Block Diagram
Pinouts ISL2111ARTZ
(10 LD 4x4 TDFN)
TOP VIEW
ISL2110AR4Z, ISL2111AR4Z
(12 LD 4x4 DFN)
TOP VIEW
ISL2110ABZ, ISL2111ABZ
(8 LD SOIC)
TOP VIEW
ISL2111BR4Z
(8 LD 4x4 DFN)
TOP VIEW
2
3
4
1
5
9
8
7
10
6
VDD
HB
HO
HS
NC
LO
VSS
LI
HI
NC
VDD
NC
NC
HB
HO
LO
VSS
NC
NC
LI
HS HI
2
3
4
1
5
11
10
9
12
8
6 7
EPAD*
*EPAD = Exposed PAD
5
6
8
7
4
3
2
1
VDD
HB
HO
HS
LO
LI
HI
VSS 2
3
4
1
7
6
5
8
VDD
HB
HO
HS
LO
VSS
LI
HI
EPAD*
*EPAD = EXPOSED PAD
SECONDARY
CIRCUIT
+100V
CONTROL
CONTROLLER
PWM
LI
HI HO
LO
VDD
HS
HB
+12V
VSS
REFERENCE
AND
ISOLATION
DRIVE
LO
DRIVE
HI
ISL2110
ISL2111
ISL2110, ISL2111
3FN6295.6
March 8, 2012
Functional Block Diagram
UNDER
VOLTAGE
VDD
HI
LI
VSS
DRIVER
DRIVER
HB
HO
HS
LO
LEVEL SHIFT
UNDER
VOLTAGE
EPAD (DFN Package Only)
ISL2111
ISL2111
*EP AD = Exposed Pad. The EPAD is electrically isolated from all other pins. For
best thermal performance connect the EPAD to the PCB power ground plane.
SECONDARY
ISOLATION
PWM
+48V
+12V
CIRCUIT
FIGURE 1. TWO-SWITCH FORWARD CONVERTER
ISL2110
ISL2111
SECONDARY
CIRCUIT
ISOLATION
PWM
+48V
+12V
FIGURE 2. FORWARD CONVERTER WITH AN ACTIVE-CLAMP
ISL2110
ISL2111
ISL2110, ISL2111
4FN6295.6
March 8, 2012
Absolute Maximum Ratings Thermal Information
Supply Voltage, VDD, VHB - VHS (Notes 4, 5) . . . . . . . .-0.3V to 18V
LI and HI Voltages (Note 5) . . . . . . . . . . . . . . . .-0.3V to VDD + 0.3V
Voltage on LO (Note 5) . . . . . . . . . . . . . . . . . . .-0.3V to VDD + 0.3V
Voltage on HO (Note 5) . . . . . . . . . . . . . . VHS - 0.3V to VHB + 0.3V
Voltage on HS (Continuous) (Note 5) . . . . . . . . . . . . . . -1V to 110V
Voltage on HB (Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .118V
Average Current in VDD to HB Diode . . . . . . . . . . . . . . . . . . 100mA
Maximum Recommended Operating Conditions
Supply Voltage, VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V to 14V
Voltage on HS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1V to 100V
Voltage on HS . . . . . . . . . . . . . . .(Repetitive Transient) -5V to 105V
V olt age on HB. . . . .V HS+7V to VHS+14V and VDD - 1V to VDD+100V
HS Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <50V/ns
Thermal Resistance (Typical) θJA (°C/W) θJC (°C/W)
8 Ld SOIC (Notes 6, 10). . . . . . . . . . . . 95 46
10 Ld TDFN (Notes 7, 8) . . . . . . . . . . . 42 5.5
12 Ld DFN (Notes 7, 8) . . . . . . . . . . . . 40 5.5
8 Ld DFN (Notes 7, 8) . . . . . . . . . . . . . 40 4.0
Max Power Dissip ation at +2 5°C in Free Air
8 Ld SOIC (Notes 6, 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W
10 Ld TDFN (Notes 7, 8). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0W
12 Ld DFN (Notes 7, 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1W
8 Ld DFN (Notes 7, 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1W
Storage Temperature Range . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Junction Temperature Range. . . . . . . . . . . . . . . . . .-55°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
4. The ISL2110 and ISL2111 are capable of derated operation at supply voltages exceeding 14V. Figure 22 shows the high-side voltage derating
curve for this mode of operation.
5. All voltages referen ced to VSS unless othe rwise specified.
6. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board. See Tech Brief TB379 for details.
7. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
8. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
9. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. T emperature limits established by characterization
and are not production tested.
10. For θJC, the “case temp” location is taken at the package top center.
Electrical Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, unless otherwise specified.
PARAMETERS SYMBOL TEST CONDITIONS
TJ = +25°C TJ = -40°C to +12 5°C
UNITSMIN TYP MAX MIN
(Note 9) MAX
(Note 9)
SUPPLY CURRENTS
VDD Quiescent Current IDD ISL2110; LI = HI = 0V - 0.1 0.25 - 0.3 mA
VDD Quiescent Current IDD ISL2111; LI = HI = 0V - 0.3 0.45 - 0.55 mA
VDD Operating Current IDDO ISL2110; f = 500kHz - 3.4 5.0 - 5.5 mA
VDD Operating Current IDDO ISL2111; f = 500kHz - 3.5 5.0 - 5.5 mA
Total HB Quiescent Current IHB LI = HI = 0V - 0.1 0.15 - 0.2 mA
Total HB Operating Current IHBO f = 500kHz - 3.4 5.0 - 5.5 mA
HB to VSS Current, Quiescent IHBS LI = HI = 0V; VHB = VHS = 114V - 0.05 1.5 - 10 µA
HB to VSS Current, Operating IHBSO f = 500kHz; VHB = VHS = 114V - 1.2 - - - mA
INPUT PINS
Low Level Input Voltage Threshold VIL ISL2110 3.7 4.4 - 3.5 - V
Low Level Input Voltage Threshold VIL ISL2111 1.4 1.8 - 1.2 - V
High Level Input Voltage Threshold VIH ISL2110 - 6.6 7.4 - 7.6 V
High Level Input Voltage Threshold VIH ISL2111 - 1.8 2.2 - 2.4 V
Input Voltage Hysteresis VIHYS ISL2110 - 2.2 - - - V
Input Pull-Down Resistance RI- 210 - 100 500 kΩ
ISL2110, ISL2111
5FN6295.6
March 8, 2012
UNDERVOLTAGE PROTECTION
VDD Rising Threshold VDDR 6.1 6.6 7.1 5.8 7.4 V
VDD Threshold Hysteresis VDDH -0.6- - - V
HB Rising Threshold VHBR 5.5 6.1 6.8 5.0 7.1 V
HB Threshold Hysteresis VHBH -0.6- - - V
BOOT STRAP DIODE
Low Current Forward Voltage VDL IVDD-HB = 100µA - 0.5 0.6 - 0.7 V
High Current Forward Voltage VDH IVDD-HB = 100mA - 0.7 0.9 - 1 V
Dynamic Resistance RDIVDD-HB = 100mA - 0.7 1 - 1.5 Ω
LO GATE DRIVER
Low Level Output Voltage VOLL ILO = 100mA - 0.1 0.18 - 0.25 V
High Level Output Voltage VOHL ILO = -100mA, VOHL = VDD - VLO - 0.16 0.23 - 0.3 V
Peak Pull-Up Current IOHL VLO = 0V - 3 - - - A
Peak Pull-Down Current IOLL VLO = 12V - 4 - - - A
HO GATE DRIVER
Low Level Output Voltage VOLH IHO = 100mA - 0.1 0.18 - 0.25 V
High Level Output Voltage VOHH IHO = -100mA, VOHH = VHB - VHO - 0.16 0.23 - 0.3 V
Peak Pull-Up Current IOHH VHO = 0V - 3 - - - A
Peak Pull-Down Current IOLH VHO = 12V - 4 - - - A
Electrical Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, unless otherwise specified. (Continued)
PARAMETERS SYMBOL TEST CONDITIONS
TJ = +25°C TJ = -40°C to +12 5°C
UNITSMIN TYP MAX MIN
(Note 9) MAX
(Note 9)
Switching Specifications VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO, unless otherwise specified.
PARAMETERS SYMBOL TEST
CONDITIONS
TJ = +25°C TJ = -40°C
to +125°C
UNITSMIN TYP MAX MIN
(Note 9) MAX
(Note 9)
Lower T urn-Off Propagation De lay (LI Falling to LO Falling) tLPHL - 32 50 - 60 ns
Upper T urn-Off Propagation Delay (HI Falling to HO Falling) tHPHL - 32 50 - 60 ns
Lower Turn-On Prop agation Delay (LI Risin g to LO Risin g) tLPLH - 39 50 - 60 ns
Upper Turn-On Prop a gation Delay (HI Rising to HO Rising ) tHPLH - 38 50 - 60 ns
Delay Matching: Upper Turn-Off to Lower Turn-On tMON 1 8 - - 16 ns
Delay Matching: Lower Turn-Off to Upper Turn-On tMOFF 1 6 - - 16 ns
Either Output Rise Time (10% to 90%) tRC CL = 1nF - 9 - - - ns
Either Output Fall Time (90% to 10%) tFC CL = 1nF - 7.5 - - - ns
Either Output Rise Time (3V to 9V) tR CL = 0.1µF - 0.3 0.4 - 0.5 µs
Either Output Fall Time (9V to 3V) tF CL = 0.1µF - 0.19 0.3 - 0.4 µs
Minimum Input Pulse Width that Changes the Output tPW - - - - 50 ns
Bootstrap Diode Turn-On or Turn-Off Time tBS -10- - - ns
ISL2110, ISL2111
6FN6295.6
March 8, 2012
Timing Diagrams
Pin Descriptions
SYMBOL DESCRIPTION
VDD Positive supply to lower gate driver. Bypass this pin to VSS.
HB High-side bootstrap supply. External bootstrap capacitor is required. Connect positive side of bootstrap capacitor to this pin.
Bootstrap diode is on-chip.
HO High-side output. Connect to gate of high-side power MOSFET.
HS High-side source connection. Connect to source of high-side power MOSFET. Connect negative side of bootstrap capacitor to this
pin.
HI High-side input.
LI Low-side input.
VSS Chip negative supply, which will generally be ground.
LO Low-side output. Connect to gate of low-side power MOSFET.
NC No Connect.
EPAD Exposed pad. Connect to ground or float. The EPAD is electrically isolated from all other pins.
FIGURE 3. PROPAGATION DELAYS FIGURE 4. DELAY MATCHING
tHPLH,
tLPLH tHPHL,
tLPHL
HI, LI
HO
,
LO tMON tMOFF
LI
HI
LO
HO
Typical Performance Curves
FIGURE 5. ISL2110 IDD OPERATING CURRENT vs
FREQUENCY FIGURE 6. ISL2 1 1 1 IDD OPERA TING CURRENT vs
FREQUENCY
0.1
1.0
10.0
FREQUENCY (Hz)
IDDO (mA)
T = +25°C
T = -40°C
T = +125°C
T = +150°C
10k 100k 1.103k10k 100k 1.103k
0.1
1.0
10.0
FREQUENCY (Hz)
IDDO (mA)
T = +25°C
T = -40°C
T = +150°C
T = +125°C
ISL2110, ISL2111
7FN6295.6
March 8, 2012
FIGURE 7. IHB OPERATING CURRENT vs FREQUENCY FIGURE 8. IHBS OPERATING CURRENT vs FREQUENCY
FIGURE 9. HIGH LEVEL OUTPUT VOLTAGE vs TEMPERATURE FIGURE 10. LOW LEVEL OUTPUT VOL TAGE vs
TEMPERATURE
FIGURE 1 1. UNDERVOL TAGE LOCKOUT THRESHOLD vs
TEMPERATURE FIGURE 12. UNDERVOL TAGE LOCKOUT HYSTERESIS vs
TEMPERATURE
Typical Performance Curves (Continued)
FREQUENCY (Hz)
IHBO (mA)
0.01
1.0
10.0
T = +25°C
T = -40°C
T = +125°C
T = +150°C
10k 100k 1.103k
0.1
FREQUENCY (Hz)
IHBSO (mA)
0.01
1.0
10.0
T = -40°C
T = +125°C
T = +150°C
10k 100k 1.103k
0.1
T = +25°C
-50 0 50 100 150
50
100
150
200
250
300
TEMPERATURE (°C)
VOHL, VOHH (mV)
VDD = VHB = 12V
VDD = VHB = 14V
VDD = VHB = 8V
-50 0 50 100 150
50
100
150
200
VOLL, VOLH (mV)
TEMPERATURE (°C)
VDD = VHB = 12V
VDD = VHB = 14V
VDD = VHB = 8V
VDDR, VHBR (V)
-50 0 50 100 150
6.7
TEMPERATURE (°C)
VHBR
VDDR
6.5
6.3
6.1
5.9
5.7
5.5
5.3
VDDH, VHBH (V)
-50 0 50 100 150
0.70
TEMPERATURE (°C)
VHBH
VDDH
0.65
0.60
0.55
0.50
0.45
0.40
ISL2110, ISL2111
8FN6295.6
March 8, 2012
FIGURE 13. ISL21 10 PROP AGA TION DELAYS vs
TEMPERATURE FIGURE 14. ISL21 1 1 PROP AGATION DELAYS vs
TEMPERATURE
FIGURE 15. ISL2110 DELAY MATCHING vs TEMPERATURE FIGURE 16. ISL2111 DELAY MATCHING vs TEMPERATURE
FIGURE 17. PEAK PULL-UP CURRENT vs OUTPUT VOLTAGE FIGURE 18. PEAK PULL-DOWN CURRENT vs OUTPUT
VOLTAGE
Typical Performance Curves (Continued)
25
30
35
40
45
50
55
tLPLH, tLPHL, tHPLH, tHPHL (ns)
-50 0 50 100 150
TEMPERATURE (°C)
tLPHL
tHPHL
tLPLH
tHPLH
25
30
35
40
45
50
55
tLPLH, tLPHL, tHPLH, tHPHL (ns)
-50 0 50 100 150
TEMPERATURE (°C)
tLPHL
tHPHL
tLPLH
tHPLH
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
tMON, tMOFF (ns)
-50 0 50 100 150
TEMPERATURE (°C)
tMOFF
tMON
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
tMON, tMOFF (ns)
-50 0 50 100 150
TEMPERATURE (°C)
tMOFF
tMON
0481012
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VLO, VHO (V)
IOHL, IOHH (A)
26 0481012
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VLO, VHO (V)
IOHL, IOHH (A)
26
1.0
0.5
ISL2110, ISL2111
9
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No lice nse is gran t ed by i mpli catio n or other wise u nder an y p a tent or patent right s of Int ersi l or it s sub sidi aries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN6295.6
March 8, 2012
FIGURE 19. ISL2110 QUIESCENT CURRENT vs VOLTAGE FIGURE 20. ISL2111 QUIESCENT CURRENT vs VOLTAGE
FIGURE 21. BOOTSTRAP DIODE I-V CHARACTERISTICS FIGURE 22. VHS VOLTAGE vs VDD VOLTAGE
Typical Performance Curves (Continued)
0 5 10 15 20
0
10
20
30
40
50
60
70
80
90
100
110
120
VDD, VHB (V)
IDD, IHB (µA)
IHB
IDD
0 5 10 15 20
VDD, VHB (V)
IDD, IHB (µA)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
320
IHB
IDD
0.3 0.4 0.5 0.6 0.7 0.8
1.10-3
0.01
0.10
1.00
FORWARD VOLTAGE (V)
FORWARD CURRENT (A)
1.10-4
1.10-5
1.10-6
12 13 14 15 16
0
20
40
60
80
100
120
V
HS
TO V
SS
VOLTAGE (V)
V
DD
TO V
SS
VOLTAGE (V)
ISL2110, ISL2111
10 FN6295.6
March 8, 2012
ISL2110, ISL2111
Package Outline Drawing
L10.4x4
10 LEAD THIN DUAL FLAT NO-LEAD PLASTIC PACKAGE
Rev 1, 1/08
TYPICAL RECOMMENDED LAND PATTERN
DETAIL "X"
SIDE VIEW
TOP VIEW
BOTTOM VIEW
located within the zone indicated. The pin #1 identifier may be
Unless otherwise specified, tolerance : Decimal ± 0.05
Tiebar shown (if present) is a non-functional feature.
The configuration of the pin #1 identifier is optional, but must be
between 0.15mm and 0.30mm from the terminal tip.
Dimension b applies to the metallized terminal and is measured
Dimensions in ( ) for Reference Only.
Dimensioning and tolerancing conform to AMSE Y14.5m-1994.
6.
either a mold or mark feature.
3.
5.
4.
2.
Dimensions are in millimeters.1.
NOTES:
4.00 2.60
0.15
( 3.80)
(4X)
( 10X 0 . 30 )
( 8X 0 . 8 )
0 .75
BASE PLANE
C
SEATING PLANE
0.08
C
0.10
C
10 X 0.30
SEE DETAIL "X"
0.10
4
CAMB
INDEX AREA
6
PIN 1
4.00
A
B
PIN #1 INDEX AREA BSC
3.2 REF
8X 0.80
6
( 10 X 0.60 )
0 . 00 MIN.
0 . 05 MAX.
C
0 . 2 REF
10X 0 . 40
3.00
( 2.60)
( 3.00 )
0.05 M C
6
5
10
1
11 FN6295.6
March 8, 2012
ISL2110, ISL2111
Package Outline Drawing
L12.4x4A
12 LEAD DUAL FLAT NO-LEAD PLASTIC PACKAGE
Rev 1, 3/11
TYPICAL RECOMMENDED LAND PATTERN DETAIL "X "
SIDE VIEW
TOP VIEW
BOTTOM VIEW
located within the zone indicated. The pin #1 identifier may be
Unless otherwise specified, tolerance : Decimal ± 0.05
Tiebar shown (if present) is a non-functional feature.
The configuration of the pin #1 identifier is optional, but must be
between 0.15mm and 0.30mm from the term inal tip.
Lead width applies to the metalli zed terminal and is measured
Dimensions in ( ) for Reference Only.
Dimensioning and tolerancing conform to AMSE Y14.5m-1994.
6.
either a mold or mark feature.
3.
5.
4.
2.
Dimensions are in mi llimeters.1.
NOTES:
4.00 1.58
0.15
( 3.80)
(4X)
( 12X 0 . 25)
( 10X 0 . 5 )
1.00 MAX
BASE PLANE
C
SEATING PLANE
0.08
C
0.10 C
12 X 0.25
SEE DETAIL "X"
0.10
4
CAMB
INDEX AREA
6
PIN 1
4.00
A
B
PIN #1 INDEX AREA 3.2 REF
10X 0.50 BSC
6
( 12 X 0.65 )
0 . 00 MIN.
0 . 05 MAX.
C
0 . 2 REF
12X 0 . 45
2.80
( 1.58)
( 2.80 )
0.05 M C
7
6
12
1
12 FN6295.6
March 8, 2012
ISL2110, ISL2111
Package Outline Drawing
M8.15
8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
Rev 3, 3/11
DETAIL "A"
TOP VIEW
INDEX
AREA
123
-C-
SEATING PLANE
x 45°
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1982.
2. Package length does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
3. Package width does not include interlead flash or protrusions. Inte rlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
4. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatche d area.
5. Terminal numbers are shown for reference only.
6. The lead width as measured 0.36mm (0.014 inch) or greater abov e the
seating plane, shall not exceed a maximum value of 0.61mm (0. 024 inch) .
7. Controlling dimension: MILLIMETER. Converted inch dimensions are not
necessarily exact.
8. This outline conforms to JEDEC publication MS-012-AA ISSUE C.
SIDE VIEW “A
SIDE VIEW “B”
1.27 (0.050)
6.20 (0.244)
5.80 (0.228)
4.00 (0.157)
3.80 (0.150)
0.50 (0.20)
0.25 (0.01)
5.00 (0.197)
4.80 (0.189) 1.75 (0.069)
1.35 (0.053)
0.25(0.010)
0.10(0.004)
0.51(0.020)
0.33(0.013)
0.25 (0.010)
0.19 (0.008)
1.27 (0.050)
0.40 (0.016)
1.27 (0.050)
5.20(0.205)
1
2
3
45
6
7
8
TYPICAL RECOMMENDED LAND PATTERN
2.20 (0.087)
0.60 (0. 023)
13 FN6295.6
March 8, 2012
Package Outline Drawing
L8.4x4
8 LEAD DUAL FLAT NO-LEAD PLASTIC PACKAGE
Rev 0, 11/09
TYPICAL RECOMMENDED LAND PATTERN DETAIL "X"
SIDE VIEW
TOP VIEW
BOTTOM VIEW
located within the zone indicated. The pin #1 identifier may be
Unless otherwise specified, tolerance : Decimal ± 0.05
Tiebar shown (if present) is a non-functional feature.
The configuration of the pin #1 identifier is optional, but must be
between 0.15mm and 0.30mm from the terminal tip.
Dimension applies to the metallized terminal and is measured
Dimens ion s in ( ) for Referen ce O n ly.
Dimensioning and tolerancing conform to ASME Y14.5m-1994.
6.
either a mold or mark feature.
3.
5.
4.
2.
Dimensions are in millimeters.1.
NOTES:
4.00 2.50 ± 0.10
0.15
( 3.80)
(4X)
( 8X 0 . 30 )( 6X 0 . 8 )
0 .9 ± 0.10
BASE PLANE
C
SEATING PLANE
0.08
C
0.10 C
8 X 0.30
SEE DETAIL "X"
0.10
4
CAMB
INDEX AREA
6
PIN 1
4.00
A
B
PIN #1 INDEX AREA BSC
2.4 REF
6X 0.80
6
( 8 X 0.60 )
8X 0 . 40 ± 0.10
3.45 ± 0.10
( 2.50)
( 3.45 )
0.05 M C
5
4
8
1
0 . 00 MIN.
0 . 05 MAX.
C
0 . 2 REF
ISL2110, ISL2111