PD -96258 IRF7220GPbF HEXFET(R) Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Halogen-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -14V RDS(on) = 0.012 Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. Units -14 -11 -8.8 -88 2.5 1.6 0.02 110 12 -55 to + 150 V W/C mJ V C Max. Units 50 C/W A W Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient 1 07/10/09 IRF7220GPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -14 --- --- --- -0.60 8.4 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -5mA -0.006 --- V/C Reference to 25C, I D = -1mA .0082 0.012 VGS = -4.5V, ID = -11A .0125 0.020 VGS = -2.5V, ID = -8.8A --- --- V VDS = VGS, ID = -250A --- --- S VDS = -10V, ID = -11A --- -5.0 VDS = -11.2V, VGS = 0V A --- -100 VDS = -11.2V, VGS = 0V, TJ = 70C --- -100 VGS = -12V nA --- 100 VGS = 12V 84 125 ID = -11A 13 20 nC VDS = -10V 37 55 VGS = -5.0V 19 --- VDD = -10V 420 --- ID = -11A ns 140 --- RG = 6.2 1040 --- RD = 0.91 8075 --- VGS = 0V 4400 --- pF VDS = -10V 4150 --- = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units -2.5 -88 --- --- --- --- 160 147 -1.2 240 220 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V TJ = 25C, IF = -2.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. 2 When mounted on 1 inch square copper board, t<10 sec Starting TJ = 25C, L = 1.8mH RG = 25, IAS = 11A. (See Figure 10) www.irf.com IRF7220GPbF 1000 1000 VGS -4.5V -4.0V -3.0V -2.0V -1.8V -1.6V -1.4V BOTTOM -1.2V 100 100 10 -1.2V 1 20s PULSE WIDTH TJ = 25 C 0.1 0.1 1 10 -1.2V 1 10 T J = 25C T J = 150C VDS = -10V 250s PULSE WIDTH 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current () 100 2.0 10 Fig 2. Typical Output Characteristics 2.0 1.5 1 -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 20s PULSE WIDTH TJ = 150 C 0.1 0.1 -VDS , Drain-to-Source Voltage (V) 1.0 VGS -4.5V -4.0V -3.0V -2.0V -1.8V -1.6V -1.4V BOTTOM -1.2V TOP -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) TOP ID = -11A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -4.5V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) -V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7220GPbF 10000 -VGS , Gate-to-Source Voltage (V) 9000 C, Capacitance (pF) 10 V GS = 0V, f = 1kHz Ciss = Cgs + Cgd , Cds SHORTED Crss = C gd Coss = Cds + C gd Ciss 8000 7000 6000 Coss 5000 ID = -11A VDS =-10V 8 6 4 2 Crss 4000 1 10 0 A 0 20 80 100 120 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) -IID , Drain Current (A) -ISD , Reverse Drain Current (A) 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 TJ = 150C TJ = 25C 1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 -VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 40 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) A 2.5 100us 1ms 10 10ms TA = 25 C TJ = 150 C Single Pulse 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7220GPbF 300 EAS , Single Pulse Avalanche Energy (mJ) 12 -ID , Drain Current (A) 10 8 6 4 2 0 25 50 75 100 125 TC , Case Temperature ( C) 150 Fig 9. Maximum Drain Current Vs. Case Temperature ID -4.9A -8.8A BOTTOM -11A TOP 250 200 150 100 50 0 25 50 75 100 125 Starting TJ , Junction Temperature ( C) 150 Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 PDM 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7220GPbF SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' ',0 % $ + >@ ( $ 0,1 $ E F ' ( H %$6,& H ; H H ;E >@ $ $ 0,//,0(7(56 0$; $ ,1&+(6 0,1 0$; %$6,& %$6,& %$6,& + . / \ .[ & \ >@ & $ % ;/ ;F )22735,17 127(6 ',0(16,21,1* 72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7( ;>@ >@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7+,6,6$1,5)*3%) ,17(51$7,21$/ 5(&7,),(5 /2*2 ;;;; )* '$7(&2'( <:: 3 ',6*1$7(6/($')5(( 352'8&7 < /$67',*,72)7+(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$57180%(5 *'(6,*1$7(6 +$/2*(1)5(( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 6 www.irf.com IRF7220GPbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2009 www.irf.com 7