SILICON POWER DARLINGTON TRANSISTORS (PNP) 2N6034
2N6035
2N6036
(NPN) 2N6037
2N6038
2N6039
TO126
Plastic Packa
e
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
2N6034,2N6037 ICEX VCE=40V,VBE(off)=1.5V 100 µA
2N6035, 2N6038 VCE=60V,VBE(off)=1.5V 100 µA
2N6036, 2N6039 VCE=80V,VBE(off)=1.5V 100 µA
Tc=125OC
2N6034,2N6037 VCE=40V,VBE(off)=1.5V 500 µA
2N6035, 2N6038 VCE=60V,VBE(off)=1.5V 500 µA
2N6036, 2N6039 VCE=80V,VBE(off)=1.5V 500 µA
Collector cut off Current 2N6034,2N6037 ICBO VCB=40, IE=0 0.5 mΑ
2N6035, 2N6038 VCB=60, IE=0 0.5 mΑ
2N6036, 2N6039 VCB=80, IE=0 0.5 mΑ
Emitter Cut off Current IEBO VBE=5V,IC=0 2.0 mA
DC Current Gain hFE IC=0.5A, VCE=3V 500
IC=2A, VCE=3V 750 15000
IC=4A, VCE=3V 100
Collector Emitter Saturation Voltage VCE
Sat
IC=2A,IB=8mA 2.0 V
IC=4A,IB=40mA 3.0 V
Base Emitter Saturation Voltage VBE(sat) IC=4A,IB=40mA 4.0 V
Base Emitter on Voltage VBE(on) IC=2A,IB=VCE=3V 2.8 V
Dynamic Characteristics
Small Signal Current Gain l hfe l IC=0.75A,VCE=10V 25
f=1MHz
Output Capacitance Cob VCB=10V, IE=0,
PNP f=0.1MHz 200 pF
NPN 100 pF
C
E
Continental Device India Limited Data Sheet Page 2 of 4