Datashee
t
○Product structure：Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays.
1/21 TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･14･001 21.Feb.2014 Rev.002
1.0A Variable Output
Industrial LDO Regulator
BDxxHC0MEFJ-LB
General Description
This is the product guarantees long time support in Industrial market.
BDxxHC0MEFJ-LB is a LDO regulator with output current 1.0A. The output accuracy is ±1% of output voltage. With
external resistance, it is available to set the output voltage at random (from 1.5V to 7.0V).It has package type: HTSOP-J8.
Over current protection (for protecting the IC destruction by output short circuit), circuit current ON/OFF switch (for setting
the circuit 0μA at shutdown mode), and thermal shutdown circuit (for protecting IC from heat destruction by over load
condition) are all built in. It is usable for ceramic capacitor and enables to improve smaller set and long-life.
Features
Long Time Support a Product for Industrial
Applications.
High accuracy reference voltage circuit
Built-in Over Current Protection circuit (OCP)
Built-in Thermal Shut Down circuit (TSD)
With shut down switch
Applications
Industrial Equipment
Key Specifications
Input power supply voltage range: 4.5V to 8.0V
Output voltage range(Variabl e type): 1.5V to 7.0V
Output voltage(Fixed type): 1.5V/1.8V/2.5V/3.0V/3.3V
5.0V/6.0V/7.0V
Output current: 1.0A (Max.)
Shutdown current: 0μA(Typ.)
Operating temperature range: -40℃ to +105℃
Typical Application Circuit
Package (Typ.) (Typ.) (Max.)
HTSOP-J8 4.90mm x 6.00mm x 1.00mm
HTSOP-J8
R1
VO VCC
EN
GND FIN R2
FB
COUT
CIN
CIN,COUT : Ceramic Capacitor
VO VCC
EN
GND FIN
VO_S COUTCIN
CIN,COUT : Ceramic Capacitor
2/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 21.Feb.2014 Rev.002
Ordering Information
B D x x H C 0 M E F J - L B H 2
Part
Number
Output
voltage
00:Variable
15:1.5V
18:1.8V
25:2.5V
30:3.0V
33:3.3V
50:5.0V
60:6.0V
70:7.0V
Voltage
resistance
H:10V
Output
current
C0:1.0A
High
Reliability
Grade
“M”：Mseries
Package
EFJ:HTSOP-J8
Product class
LB for Industrial applications
Packaging and forming specific ation
H2:Emboss tape reel
3/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 21.Feb.2014 Rev.002
Block Diagram
BD00HC0MEFJ-LB
BDxxHC0MEFJ-LB (Fixed type)
Pin Configuration
Pin Description
Pin No. Pin name Pin Function
1 VO Output pin
2 FB/Vo_s Feedback pin (Used to connect Vo)
3 GND GND pin
4 N.C. Non Connection (Used to connect GND or OPEN state.)
5 EN Enable pin
6 N.C. Non Connection (Used to connect GND or OPEN state.)
7 N.C. Non Connection (Used to connect GND or OPEN state.)
8 VCC Input pin
Reverse FIN Substrate(Connect to GND)
Figure 1. Block Diagram
Figure 2. Block Diagram (Fixed type)
TOP VIEW
VO
GND
N.C.
N.C.
N.C.
EN
VCC
FB/Vo_s
GND
EN
Ceramic
Capacitor
Vo
VCC
FB
R1
R2
Ceramic
Capacitor
≧ 1.0μF
≧ 1.0μF
1.5V to 7.0V
(VO+0.90) to 8.0V
TSD
8
1
3
5
2
OCP
SOFT
START
FIN
Body di
GND
EN
TSD
8
1
3
5
2
OCP
SOFT
START
FIN
Body di
Ceramic
Capacitor
Vo
VCC
Vo_s
Ceramic
Capacitor
≧ 1.0μF
≧ 1.0μF
4.5V～8.5V
4/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 21.Feb.2014 Rev.002
Absolute Maximum Ratings (Ta=25℃)
Parameter Symbol Limits Unit
Power supply voltage VCC -0.3 to +10.0 *1 V
EN voltage VEN 10.0 V
Power dissipation HTSOP-J8 Pd*2 2110
*2 mW
Operating Temperature Range Topr -40 to +105 ℃
Storage Temperature Range Tstg -55 to +150 ℃
Junction Temperature Tjmax +150 ℃
*1 Not to exceed Pd
*2 Reduced by 16.9mW/℃ for each increase in Ta of 1℃ over 25℃. (when mounted on a board 70mm×70mm×1.6mm glass-epoxy board, two layer)
Recommended Operating Ratings (Ta=25℃)
Parameter Symbol Min. Max. Unit
Input power supply voltage VCC 4.5 8.0 V
EN voltage VEN 0.0 8.0 V
Output voltage setting range VO 1.5 7.0 V
Output current IO 0.0 1.0 A
Electrical Characteristics (Unless otherwise noted, EN=3V, Vcc=6V, R1=43kΩ, R2=8.2kΩ)
Parameter Symbol Temp Min. Typ. Max. Unit Conditions
Circuit current at shutdown
mode ISD 25℃ - 0 5
μA VEN=0V, OFF mode
-40~105℃- - 5
Bias current ICC 25℃ - 600 900
μA
-40~105℃- - 1200
Line regulation Reg.I 25℃ -1.0 - 1.0
% VCC =( Vo+0.9V )→8.0V
-40~105℃-1.0 - 1.0
Load regulation Reg IO 25℃ -1.5 - 1.5
% IO=0→1.0A
-40~105℃-1.5 - 1.5
Minimum dropout Voltage1 VCO1 25℃ - 0.15 0.23
V VCC=5V, IO=250mA
-40~105℃- - 0.3
Minimum dropout Voltage2 VCO2 25℃ - 0.30 0.46
V VCC=5V, IO=500mA
-40~105℃- - 0.6
Minimum dropout Voltage3 VCO3 25℃ - 0.45 0.69
V VCC=5V, IO=750mA
-40~105℃- - 0.9
Minimum dropout Voltage4 VCO4 25℃ - 0.60 0.90
V VCC=5V, IO=1.0A
-40~105℃- - 1.2
Output reference voltage
(Variable type) VFB 25℃ 0.792 0.800 0.808
V IO=0mA
-40~105℃0.776 - 0.824
Output voltage(Fixed type) VO 25℃ V
O×0.99 VO V
O×1.01 V IO=0mA
-40~105℃Vo×0.97 Vo Vo×1.03
EN Low voltage VEN(Low) 25℃ 0 - 0.8
V
-40~105℃0 - 0.8
EN High voltage VEN(High) 25℃ 2.4 - 8.0
V
-40~105℃2.4 - 8.0
EN Bias current IEN 25℃ 1 3 9
µA
-40~105℃- - 9
5/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 21.Feb.2014 Rev.002
Typical Performance Curves
(Unless otherwise noted, EN=3V, VCC=6V, R1=43kΩ, R2=8.2kΩ)
IO IO
VEN
VCC
VO
VEN
VCC
T.B.D
T.B.D T.B.D
Vo
100mV/div
Io
1A/div
Vo
100mV/div
Io
1A/div
10usec/div 10usec/div
Vo
100mV/div
Io
1A/div
10usec/div 2msec/div
Vo
100mV/div
Io
1A/div
Figure 6.
Transient Response
(1.0→0A)
Co=1µF,Ta=-40℃
Figure 5.
Transient Response
(0→1.0A)
Co=1µF,Ta=105℃
Figure 3.
Transient Response
(0→1.0A)
Co=1µF,Ta=-40℃
Figure 4.
Transient Response
(0→1.0A)
Co=1µF,Ta=25℃
6/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･15･001 21.Feb.2014 Rev.002
Figure 7.
Transient Response
(1.0→0A)
Co=1µF,Ta=25℃
2msec/div
Vo
100mV/div
Io
1A/div
2msec/div
Vo
100mV/div
Io
1A/div
Figure 8.
Transient Response
(1.0→0A)
Co=1µF,Ta=105℃
Vcc
2V/div
Vo
2V/div
Figure 9.
Input sequence 1
Co=1µF,Ta=-40℃
1msec/div
Vcc
2V/div
Vo
2V/div
VEN
2V/div
1msec/div
Figure 10.
Input sequence 1
Co=1µF,Ta=25℃
VEN
2V/div
7/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 21.Feb.2014 Rev.002
Vcc
2V/div
Vo
2V/div
1msec/div
Figure 11.
Input sequence 1
Co=1µF,Ta=105℃
40msec/div
Vcc
2V/div
Vo
2V/div
Figure 12.
OFF sequence 1
Co=1µF,Ta=-40℃
Vcc
2V/div
Vo
2V/div
Figure 13.
OFF sequence 1
Co=1µF,Ta=25℃
40msec/div 40msec/div
Vcc
2V/div
Figure 14.
OFF sequence 1
Co=1µF,Ta=105℃
VEN
2V/div VEN
2V/div
VEN
2V/div VEN
2V/div
Vo
2V/div
8/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 21.Feb.2014 Rev.002
VEN
2V/div
Vcc
2V/div
Vo
2V/div
1msec/div
Figure 15.
Input sequence 2
Co=1µF,Ta=-40℃
Vcc
2V/div
Vo
2V/div
1msec/div
Figure 16.
Input sequence 2
Co=1µF,Ta=25℃
VEN
2V/div
Vcc
2V/div
Vo
2V/div
1msec/div
Figure 17.
Input sequence 2
Co=1µF,Ta=105℃
VEN
2V/div
Vcc
2V/div
Vo
2V/div
Figure 18.
OFF sequence 2
Co=1µF,Ta=-40℃
40msec/div
VEN
2V/div
9/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･15･001 21.Feb.2014 Rev.002
VEN
2V/div
Vcc
2V/div
Vo
2V/div
VEN
2V/div
Vcc
2V/div
Vo
2V/div
40msec/div 40msec/div
Figure 19.
OFF sequence 2
Co=1µF,Ta=25℃
Figure 20.
OFF sequence 2
Co=1µF,Ta=105℃
4.8
4.9
5.0
5.1
5.2
-40 -15 10 35 60 85
Ta [°C]
Vo
[
V
]
105
Figure 21.
Ta-VO (IO=0mA)
Ta [℃]
VO [V]
400
500
600
700
800
-40 -15 10 35 60 85
T a [°C]
ICC
[µ
A
]
105
Figure 22.
Ta-ICC
Ta [℃]
VO [V]
4.8
4.9
5.0
5.1
5.2
-40 -15 10 35 60 85
Ta [°C]
Vo
[
V
]
105 400
500
600
700
800
-40 -15 10 35 60 85
Ta [°C]
ICC
[µ
A
]
105
5.2
5.1
5.0
4.9
4.8
800
700
600
500
400
-40 -15 10 35 60 85 105
-40 -15 10 35 60 85 105
Ta [°C] Ta [°C]
10/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･15･001 21.Feb.2014 Rev.002
Figure 24.
Ta-IEN
Figure 25.
IO-VO
VO[V]
IO[A]
0.0
0.2
0.4
0.6
0.8
1.0
-40 -15 10 35 60 85
Ta [°C]
ICC
[µ
A
]
105
Figure 23.
Ta-ISD
(VEN=0V)
Ta [℃]
ISD [µA]
0.0
2.0
4.0
6.0
8.0
-40 -15 10 35 60 85
Ta [°C]
ICC
[µ
A
]
105
IEN [µA]
Ta [℃]
0.0
1.0
2.0
3.0
4.0
5.0
02468101214
VCC [V]
ISD [uA]
Figure 26.
VCC-ISD
(VEN=0V)
VCC [V]
ISD [µA]
Temp=-40°C
Temp=25°C
Temp=105°C
VO[V]
Io [A]
0 0.2 0.4 0.6 0.8 1
5.2
5.1
5.0
4.9
4.8
1.0
0.8
0.6
0.4
0.0
0.2
8.0
6.0
4.0
2.0
0.0
-40 -15 10 35 60 85 105 -40 -15 10 35 60 85 105
11/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 21.Feb.2014 Rev.002
Figure 29.
OCP
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0 0.5 1 1.5 2 2.5
IO [A ]
VO [V]
Figure 30.
IO-ICC
Figure 28.
TSD (IO=0mA)
Vo[V]
IO [A]
VO [V]
VO[V]
Ta[℃]
0.0
2.0
4.0
6.0
0 2 4 6 8 10 12 14
VCC [V ]
VO [V]
Temp=105°C
Temp=25°C
Temp=-40°C
400
500
600
700
800
900
0 0.2 0.4 0.6 0.8 1
IO [A ]
ICC [µA]
Temp=105°C
Temp=25°C
Temp=-40°C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0 0.5 1 1.5 2 2.5
Io [A ]
Vo [V]
Temp=105°C
Temp=25°C
Temp=-40°C
800
700
600
500
400
900
Figure 27.
VCC-VO (IO=0mA)
12/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･15･001 21.Feb.2014 Rev.002
Fig.31
ESR Safety area Figure 32.
PSRR (IO=0mA)
IO [A]
PSRR
[dB]
Vdrop[V]
T.B.D
ESR – IO characteristics
0.01
0.10
1.00
10.00
0 0.2 0.4 0.6 0.8 1
Io [A]
ESR [Ω]
Safety Area
Figure 31.
ESR Safety area
0.2
0.3
0.4
0.5
0.6
-40 -15 10 35 60 85
T a [°C]
Vdro
p
[
V
]
105
Ta [°C]
Vdrop [V]
Figure 33.
Ta-Vdrop
(VCC=6V, IO=1A)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.2 0.4 0.6 0.8 1
Io [A]
Vdrop [V]
Figure 34.
Minimum dropout Voltage 1
（VCC=4.5V）
-40 -15 10 35 60 85 105
Temp=105°C
Temp=25°C
Temp=-40°C
13/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 21.Feb.2014 Rev.002
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.2 0.4 0.6 0.8 1
Io [A]
Vdrop [V]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.2 0.4 0.6 0.8 1
Io [A]
Vdrop [V]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.2 0.4 0.6 0.8 1
Io [A]
Vdrop [V]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.2 0.4 0.6 0.8 1
Io [A]
Vdrop [V]
Figure 35.
Minimum dropout Voltage 2
（VCC=6.0V）
Figure 36.
Minimum dropout Voltage 3
（VCC=8.0V）
Figure 37.
Minimum dropout Voltage 4
（VCC=10.0V）
Figure 38.
Minimum dropout Voltage 5
（VCC=12.0V）
Temp=105°C
Temp=25°C
Temp=-40°C
Temp=105°C
Temp=25°C
Temp=-40°C
Temp=105°C
Temp=25°C
Temp=-40°C Temp=105°C
Temp=25°C
Temp=-40°C
14/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･15･001 21.Feb.2014 Rev.002
Power Dissip ation
◎HTSOP-J8
Thermal design should allow operation within the following conditions. Note that the temperatures listed are the allowed
temperature limits, and thermal design should allow sufficient margin from the limits.
1. Ambient temperature Ta can be no hig her than 105℃.
2. Chip junction temperature (Tj) can be no higher than 150℃.
Chip junction temperature can be determined as f ollows:
Most of the heat loss that occ urs in the B D xxHC0MEFJ-LB i s gen erated f ro m the out put Pch FET. Power loss is determi ned
by the total VCC-VO voltage and output current. Be sure to confirm the system input and output voltage and the output
current conditions in relation to the heat dissipation characteristics of the VCC and VO in the design. Bearing in mind that
heat dissipation may vary substantially depending on the substrate employed (due to the power package incorporated in
the BDxxHC0MEFJ-LB make certain to factor conditions such as substrate size into the thermal design.
Power consumption[W] = Input voltage (VCC) - Output voltage (VO) ×IO(Ave)
Example) Where VCC=5.0V, VO=3.3V, IO(Ave) = 0.1A,
Power consumption[W] = 5.0V - 3.3V ×0.1A
=0.17W
Calculation based on ambient temperature (Ta)
Tj=Ta+θj-a×W
＜Reference values＞
1-layer substrat e (copper foil density 0mm×0mm)
2-layer substrat e (copper foil density 15mm×15mm)
2-layer substrat e (copper foil density 70mm×70mm)
4-layer substrat e (copper foil density 70mm×70mm)
Subst r ate size: 70mm×70mm×1.6mm (substrate with thermal via)
θj-a: HTSOP-J8 153.2℃/W
113.6℃/W
59.2℃/W
33.3℃/W
Measure condition: mounted on a ROHM board,
and IC
Substrate size: 70mm × 70mm × 1.6mm
(Substrate with thermal via)
・Solder the substrate and package reverse
exposure heat radiation part
① IC only
θj-a=249.5℃/W
② 1-layer（copper foil are :0mm×0mm）
θj-a=153.2℃/W
③ 2-layer（copper f oil are :15mm×15mm）
θj-a=113.6℃/W
④ 2-layer（copper f oil are :70mm×70mm）
θj-a=59.2℃/W
⑤ 4-layer（copper f oil are :70mm×70mm）
θj-a=33.3℃/W
Power Dissipation :Pd [W]
0 25 50 75 100 125 150
0
2.0
3.0
4.0
①0.50W
周囲温度:Ta [℃]
1.0
①0.50W
②0.82W
③1.10W
④2.11W
⑤3.76W
Ambient Temperature :Ta [℃]
15/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･15･001 21.Feb.2014 Rev.002
Input-to-Output Capacitor
It is recommended that a capacitor is placed nearby pin between Input pin and GND, output pin an d GND.
A capacitor, bet ween input pi n and GND, is valid when the power supply im ped ance is hig h or drawing is long. Also as for
a capacitor, between output pin and GND, the greater the capacity, more sustainable the line regulation and it makes
improvement of characterist ics b y load change. Ho wever, p lease check by mounted o n a boar d for the actual a pplicat ion.
Ceramic capacitor usually has difference, thermal characteristics and series bias characteristics, and moreover capacity
decreases gradually by using conditions.
For more detail, please be sure to inquire t he manufacturer, and select the best ceramic capacitor.
Equivalent Series Resistance ESR (ceramic capacitor etc.)
Please attach an anti-oscillation capacitor between VO and
GND. Capacitor usually has ESR(Equivalent Series
Resistance), and operates stable in ESR-IO range, showed
right. Generally, ESR of ceramic, tantalum and electronic
capacitor etc. is different for each, so please be sure to check
a capacitor which is going to use, and use it inside the stable
operating region, showed right. Then, please evaluate for the
actual application.
0.01
0.10
1.00
10.00
00.2 0.4 0.6 0.8 1
Io [A]
ESR [Ω]
ESR – IO characteristics
Safety Area
DC Bias Voltage [V]
Ceramic capacitor capacity – DC bias characteristics
(Characteristics example)
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
10
01 234
Rated Voltage：10V
B1 characteristics
Rated Voltage：4V
X6S characteristics
Capacitance Change [%]
Rated Voltage:10V
F characteristics
Rated Voltage：6.3V
B characteristics
B characteristics
Rated Voltage：10V
16/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
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TSZ22111･15･001 21.Feb.2014 Rev.002
Evaluation Board Circuit
Evaluation Board Parts List
Board Layout
･Input capacitor CIN of VCC (VIN) should be placed very close to VCC(VIN) pin as possible, and used broad wiring pattern.
Output capacitor COUT also should be placed close to IC pin as possible. In case connected to inner layer GND plane,
please use several through hole.
・FB pin has comparatively high impedance, and is apt to be effected by noise, so floating capacity should be minim um as
possible. Please be carefu l in wiring drawing
・Please take GND pattern space widely, and design layout to be able to increase radiation efficiency.
・For output voltage setting
Output voltage can be set by FB pin voltage（0.800V typ.）and external resistance R1, R2.
（The use of resistors with R1+R2=1k to 90kΩ is recommended）
Designation Value Part No. Company Designation Value Part No. Company
R1 43kΩ MCR01PZPZF4302 ROHM C4 ‐ ‐ ‐
R2 8.2kΩ MCR01PZPZF8201 ROHM C5 1µF CM105X7R105K16AB KYOCERA
R3 ‐ ‐ ‐ C6
R4 ‐ ‐ ‐ C7 ‐ ‐ ‐
R5 ‐ ‐ ‐ C8 ‐ ‐ ‐
R6 ‐ ‐ ‐ C9 ‐ ‐ ‐
C1 1µF CM105B105K16A KYOCERA C10 ‐ ‐ ‐
C2 ‐ ‐ U1 ‐ BD00HC0MEFJ-LB ROHM
C3 ‐ ‐ U2 ‐ ‐ ‐
VO = VFB× R1+R2
R2
N.C
GND
FB N.C
N.C.
VO
2
VO
C7
3
4
7
5
U1
8
C1
C2
C3
R1
R2
C6
C5
1 VCC
6
EN
GND
SW1
EN
FIN
VCC
VO
EN GND
(
VCC VIN ) CIN
R1 R2
COUT
17/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 21.Feb.2014 Rev.002
I/O Equivalent Circuits (Output Voltage Vairable type)
I/O Equivalent Circuits (Output Volt age Fixed type)
8pin (VCC) / 1pin (VO) 2pin (FB) 5pin (EN)
2pin (FB)
8pin (VCC)
1pin (VO)
5pin (EN)
1MΩ
2MΩ
8pin (VCC) / 1pin (VO) 2pin (VO_S) 5pin (EN)
2pin (VO_S)
8pin (VCC)
1pin (VO)
5pin (EN)
1MΩ
2MΩ
18/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 21.Feb.2014 Rev.002
Operational Notes
(1). Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open
circuit. If any o ver rated values will expect t o exceed the absolute maximu m ratings, consider adding ci rcuit protection
devices, such as fuses.
(2). Connecting the power supply connector backward
Connecting of the power supply in reverse polarity can damage IC. Take precautions when connecting the power
supply lines. An external direction diode can be added.
(3). Power supply lines
Design PCB layout pattern to provide lo w impedance GND and supply lines . To obtain a lo w noise ground and supply
line, separate the ground section and supply lines of the digital and analog blocks. Furthermore, for all power supply
terminals to ICs, connect a capacitor between the power supply and the GND terminal. When applying electrolytic
capacitors in the circuit, not that capacitance characteristic values are reduced at low temperatures.
(4). GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
(5). Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
(6). Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
(7). Actions in strong el ectromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
(8). ASO
When using the IC, set the output transistor so that it does not exceed absolut e maximum ratings or ASO.
(9). Thermal shutdown circuit
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is
designed only to shut the IC off to prevent thermal runaway. It is not designed to protect the IC or guarantee its
operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the
operation of this circuit is assumed.
(10). Testing on app lication boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to
stress. Always discharge capacitors after each process or step. Always turn the IC’s power supply off before
connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly
steps as an antistatic measure. Use similar precaution when transporting or storing the IC.
TSD ON Temperature[℃] (typ.) Hysteresis Temperature [℃] (typ.)
BDxxHC0MEFJ-LB 175 15
19/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 21.Feb.2014 Rev.002
(11). Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated.
P-N junctions are formed at the inters ection of these P layers with the N la yers of other elements, creating a parasitic
diode or transist or. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction op erates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC.
The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical
damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the
GND(P substrate) voltage to an input pin, should not be use d.
(12). Ground Wiring Pattern.
When using bot h small signal and large curr ent GND patterns, it is recommended to isolat e the t wo ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to
change the GND wiring pattern of any external components, either.
Resistor Transistor (NPN)
N
N N P+ P
+
P
P substrate
GND
Pin A
N
N P+ P+
P
P substrate
GND
Parasitic element
Pin B C B
E
N
GND
Pin A
Pin B
Other adjacent elements
E
B C
GND
P
aras
iti
c
element
P
aras
iti
c
element
Parasitic element
20/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 21.Feb.2014 Rev.002
Physical Dimension Tape and Reel Information
Package Name HTSOP-J8
21/21
BDxxHC0MEFJ-LB Datasheet
TSZ02201-0R6R0AZ00560-1-2
© 2013 ROHM Co., Ltd. All rights reserved.
www.rohm.com
TSZ22111･15･001 21.Feb.2014 Rev.002
Revision History
Date Revision Changes
10.Dec.2013 001 New Release
21.Feb.2014 002
Delete sentence “and log life cycle” in General Description and Futures (page 1).
Add “Industrial Equipment” in Applications (page 1).
Applied new style (change of the size of the title).
Datasheet
Datasheet
Notice - SS Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅢ CLASSⅡb CLASSⅢ
CLASSⅣ CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Datasheet
Datasheet
Notice - SS Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
DatasheetDatasheet
Notice – WE Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
