2N2990 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)100 V(BR)CBO (V)155 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (oC)200# I(CBO) Max. (A)25n/ @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V).80 @I(C) (A) (Test Condition)200m @I(B) (A) (Test Condition)20m h(FE) Min. Current gain.60 h(FE) Max. Current gain.120 @I(C) (A) (Test Condition)200m @V(CE) (V) (Test Condition)5.0 f(T) Min. (Hz) Transition Freq30M @I(C) (A) (Test Condition)100m @V(CE) (V) (Test Condition)10 t(d) Max. (s) Delay time. t(r) Max. (s) Rise time t(on) Max. (s) On time.