FCA20N60S-F109 - Fairchild Semiconductor

FCA20N60S REV. A1

FCA20N60S 600V N-Channel MOSFET

SuperFETTM

September 2006

FCA20N60S

600V N-Channel MOSFET

Features

•650V @T

J = 150°C

• Typ. Rds(on)=0.22Ω

• Ultra low gate charge (typ. Qg=55nC)

• Low effective output capacitance (typ. Coss.eff=110pF)

• 100% avalanche tested

Description

SuperFETTM is, Farichild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

TO-3P

FCA Series

GSD

Absolute Maximum Ratings

Symbol Parameter FCA20N60S Unit

VDSS Drain-Source Voltage 600 V

IDDrain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

12.7

IDM Drain Current - Pulsed (Note 1) 60 A

VGSS Gate-Source voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 450 mJ

IAR Avalanche Current (Note 1) 20 A

EAR Repetitive Avalanche Energy (Note 1) 26 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PDPower Dissipation (TC = 25°C)

- Derate above 25°C

260

2.1

W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds 300 °C

Thermal Characteristics

Symbol Parameter FCA20N60S Unit

RθJC Thermal Resistance, Junction-to-Case 0.48 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 41.7 °C/W

*Drain current limited by maximum junction temperature

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FCA20N60S REV. A1

FCA20N60S 600V N-Channel MOSFET

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FCA20N60S FCA20N60S TO-3P - - 30

FCA20N60S FCA20N60S_F109 TO-3PN - - 30

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C600 -- -- V

VGS = 0V, ID = 250μA, TJ = 150°C-- 650 -- V

ΔBVDSS

/ ΔTJ

Breakdown Voltage Temperature

Coefficient ID = 250μA, Referenced to 25°C-- 0.6 -- V/°C

BVDS Drain-Source Avalanche Breakdown

Voltage

VGS = 0V, ID = 20A -- 700 -- V

IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V

VDS = 480V, TC = 125°C

μA

IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10V, ID = 10A -- 0.22 0.26 Ω

gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) -- 11.5 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25V, VGS = 0V,

f = 1.0MHz

-- 1730 2250 pF

Coss Output Capacitance -- 960 1150 pF

Crss Reverse Transfer Capacitance -- 85 -- pF

Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 45 60 pF

Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 110 -- pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 300V, ID = 20A

RG = 25Ω

(Note 4, 5)

-- 46 90 ns

trTurn-On Rise Time -- 140 280 ns

td(off) Turn-Off Delay Time -- 175 350 ns

tfTurn-Off Fall Time -- 100 200 ns

QgTotal Gate Charge VDS = 480V, ID = 20A

VGS = 10V

(Note 4, 5)

-- 57 72 nC

Qgs Gate-Source Charge -- 11.5 14 nC

Qgd Gate-Drain Charge -- 28 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 20 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A

VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0V, IS = 20A

dIF/dt =100A/μs (Note 4)

-- 450 -- ns

Qrr Reverse Recovery Charge -- 8.2 -- μC

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 20A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

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FCA20N60S REV. A1

FCA20N60S 600V N-Channel MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100101

100

101

102

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

* Notes :

1. 250μs Pulse Test

2. TC = 25oC

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

246810

100

101

102

-55oC

* Note:

1. VDS = 40V

2. 250μs Pulse Test

150oC

25oC

ID , Drain Current [A]

VGS , Gate-Source Voltage [V]

0 5 10 15 20 25 30 35 40 45 50

0.0

0.1

0.2

0.3

0.4

0.5

0.6

VGS = 20V

VGS = 10V

* Note: TJ = 25

RDS(ON) [Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.20.40.60.81.01.21.41.6

100

101

102

25oC

150oC

∗ Notes :

1. VGS = 0V

2. 250 μs Pulse Test

IDR , Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]

10-1 100101

1000

2000

3000

4000

5000

6000

7000

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

* Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0 102030405060

VDS = 250V

VDS = 100V

VDS = 480V

* Note : ID = 20A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

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FCA20N60S REV. A1

FCA20N60S 600V N-Channel MOSFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

* Notes :

1. VGS = 0 V

2. ID = 250 μA

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

* Notes :

1. VGS = 10 V

2. ID = 10 A

RDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

25 50 75 100 125 150

ID, Drain Current [A]

TC, Case Temperature [oC]

100101102103

10-2

10-1

100

101

102

10 ms

10 us

Operation in This Area

is Limited by R DS(on)

1 ms

100 us

* Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

* Notes :

1. ZθJC (t) = 0.48oC/W Max.

2. D uty Factor, D =t1/t2

3. TJM - TC = PDM * ZθJC (t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC(t), Thermal Response

t1, Square W ave Pulse Duration [sec]

PDM

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FCA20N60S REV. A1

FCA20N60S 600V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

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FCA20N60S REV. A1

FCA20N60S 600V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

Sam e Type

as D U T

VGS

• dv/dt controlled by R

•I

controlled by pulse period

VDD

ISD

10V

VGS

( D riv e r )

ISD

( D U T )

VDS

( DUT )

VDD

Body D iode

Forw ard Volta

e D ro

VSD

, B ody D iode Forw ard C urrent

Body D iode R everse C urrent

IRM

Body D iode R ecovery dv/dt

di/dt

D = G ate Pulse W idth

Gate Pulse Period

--------------------------

DUT

VDS

Driver

Sam e Type

as D U T

VGS

• dv/dt controlled by R

•I

controlled by pulse period

VDD

ISD

10V

VGS

( D riv e r )

ISD

( D U T )

VDS

( DUT )

VDD

Body D iode

Forw ard Volta

e D ro

VSD

, B ody D iode Forw ard C urrent

Body D iode R everse C urrent

IRM

Body D iode R ecovery dv/dt

di/dt

D = G ate Pulse W idth

Gate Pulse Period

--------------------------

D = G ate Pulse W idth

Gate Pulse Period

--------------------------

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FCA20N60S REV. A1

FCA20N60S 600V N-Channel MOSFET

15.60 ±0.20

4.80 ±0.20

13.60 ±0.20

9.60 ±0.20

2.00 ±0.20

3.00 ±0.20

1.00 ±0.20 1.40 ±0.20

ø3.20 ±0.10

3.80 ±0.20

13.90 ±0.20

3.50 ±0.20

16.50 ±0.30

12.76 ±0.20

19.90 ±0.20

23.40 ±0.20

18.70 ±0.20

1.50 +0.15

–0.05

0.60 +0.15



–0.05

5.45TYP

[5.45 ±0.30]

5.45TYP

[5.45 ±0.30]

TO-3P

Dimensions in Millimeters

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FCA20N60S REV. A1

FCA20N60S 600V N-Channel MOSFET

Mechanical Dimensions (continued)

TO-3PN

Dimensions in Millimeters

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FCA20N60S REV. A1

FCA20N60S 600V N-Channel MOSFET

TRADEMARKS

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intended to be an exhaustive list of all such trademarks.

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IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE

OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE

RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS,

SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

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which, (a) are intended for surgical implant into the body, or (b)

support or sustain life, or (c) whose failure to perform when

properly used in accordance with instructions for use provided

in the labeling, can be reasonably expected to result in

significant injury to the user.

2. A critical component is any component of a life support device

or system whose failure to perform can be reasonably expected

to cause the failure of the life support device or system, or to

affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx™

ActiveArray™

Bottomless™

Build it Now™

CoolFET™

CROSSVOLT™

DOME™

EcoSPARK™

E2CMOS™

EnSigna™

FACT™

FAST®

FASTr™

FPS™

FRFET™

FACT Quiet Series™

GlobalOptoisolator™

GTO™

HiSeC™

I2C™

i-Lo™

ImpliedDisconnect™

IntelliMAX™

ISOPLANAR™

LittleFET™

MICROCOUPLER™

MicroFET™

MicroPak™

MICROWIRE™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC®

OPTOPLANAR™

PACMAN™

POP™

Power247™

PowerEdge™

PowerSaver™

PowerTrench®

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

RapidConnect™

µSerDes™

ScalarPump™

SILENT SWITCHER®

SMART START™

SPM™

Stealth™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TCM™

TinyBoost™

TinyBuck™

TinyPWM™

TinyPower™

TinyLogic®

TINYOPTO™

TruTranslation™

UHC™

UniFET™

UltraFET®

VCX™

Wire™

Across the board. Around the world.™

The Power Franchise®

Programmable Active Droop™

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I20