Silicon Junction FETs (Small Signal)
1
Publication date: December 2004 SJF00040AED
2SK2593J
Silicon N-channel junction FET
For low-frequency amplification
For switching circuits
■Features
•Low noise figure NF
•High gate-drain voltage (source open) VGDO
•SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■Absolute Maximum Ratings Ta = 25°C
Unit: mm
Parameter Symbol Rating Unit
Drain-sourse voltage VDS 55 V
Gate-drain voltage (Source open) VGDO −55 V
Gate-source voltage (Drain open) VGSO −55 V
Drain current ID30 mA
Gate current IG10 mA
Power dissipation PD125 mW
Channel temperature Tch 125 °C
Storage temperature Tstg −55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Gate-drain surrender voltage VGDS IG = −100 µA, VDS = 0 −55 V
Drain-source cutoff current *IDSS VDS = 10 V, VGS = 0 1.0 6.5 mA
Gate-source cutoff current IGSS VGS = −30 V, VDS = 0 −10 nA
Gate-source cutoff voltage VGSC VDS = 10 V, ID = 10 µA−5V
Forward transfer admittance YfsVDS = 10 V, ID = 5 mA, f = 1 kHz 2.5 7.5 mS
Short-circuit forward transfer capacitance Ciss VDS = 10 V, VGS = 0, f = 1 MHz 6.5 pF
(Common source)
Reverse transfer capacitance Crss 1.9 pF
(Common source)
Noise figure NF VDS = 10 V, VGS = 0, f = 100 Hz 2.5 dB
Rg = 100 kΩ
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank P Q
IDSS (mA) 1.0 to 3.0 2.0 to 6.5
0.27±0.02
3
12
0.12+0.03
–0.01
0.80±0.05(0.80)
0.85
1.60±0.05
0 to 0.02
0.10 max.
0.70+0.05
–0.03
(0.375)
5˚
5˚
1.60+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05
–0.03
1: Source
2: Drain
3: Gate
EIAJ: SC-89 SSMini3-F1 Package
Marking Symbol: 2B
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hold appliances).
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tions satisfy your requirements.
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2003 SEP
