BFS17A / BFS17AR / BFS17AW
Document Number 85039
Rev. 1.5, 29-Apr-05
Vishay Semiconductors
www.vishay.com
1
19150
SOT-23
1
23
Electrostatic sensitive device.
Observe precautions for handling.
SOT-23
SOT-323
1
32
1
23
Silicon NPN Planar RF Transistor
Features
• Low noise figure
• High power gain
• Small collector capacitance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Wide band, low noise, small signal amplifiers up to
UHF frquencies, high speed logic applications and
oscillator applications.
Mechanical Data
Typ: BFS17A
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: E2
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFS17AR
Case: SOT-23 Plastic case
Weight: approx. 8.0 mg
Marking: E5
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Typ: BFS17AW
Case: SOT-323 Plastic case
Weight: approx. 6.0 mg
Marking: WE2
Pinning: 1 = Collector, 2 = Base, 3 = Emitter
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Collector-base voltage VCBO 25 V
Collector-emitter voltage VCEO 15 V
Emitter-base voltage VEBO 2.5 V
Collector current IC25 mA
Total power dissipation Tamb ≤ 60 °C Ptot 200 mW
Junction temperature Tj150 °C
Storage temperature range Tstg - 65 to + 150 °C
e3
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Document Number 85039
Rev. 1.5, 29-Apr-05
BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
Maximum Thermal Resistance
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Junction ambient 1) RthJA 450 K/W
Parameter Test condition Symbol Min Typ. Max Unit
Collector-emitter cut-off current VCE = 25 V, VBE = 0 ICES 100 μA
Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA
Emitter-base cut-off current VEB = 2.5 V, IC = 0 IEBO 10 μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0 V(BR)CEO 15 V
Collector-emitter saturation
voltage
IC = 20 mA, IB = 2 mA VCEsat 0.1 0.6 V
DC forward current transfer ratio VCE = 1 V, IC = 2 mA hFE 20 100 150
VCE = 1 V, IC = 25 mA hFE 20
Parameter Test condition Symbol Min Typ. Max Unit
Transition frequency VCE = 5 V, IC = 2 mA,
f = 300 MHz
fT1.5 GHz
VCE = 5 V, IC = 14 mA,
f = 300 MHz
fT3.5 GHz
VCE = 5 V, IC = 30 mA,
f = 300 MHz
fT33.2 GHz
Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.6 pF
Collector-emitter capacitance VCE = 5 V, f = 1 MHz Cce 0.1 pF
Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 1.1 pF
Noise figure VCE = 5 V, IC = 2 mA,
ZS = 50 Ω, f = 800 MHz
F2.5dB
Power gain VCE = 10 V, IC = 14 mA,
ZS = 50 Ω, f = 800 MHz
Gpe 13 dB
Linear output voltage - two tone
intermodulation test
VCE = 10 V, IC = 14 mA,
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
V1 = V2150 mV
Third order intercept point VCE = 10 V, IC = 14 mA,
f = 800 MHz
IP323.5 dBm
BFS17A / BFS17AR / BFS17AW
Document Number 85039
Rev. 1.5, 29-Apr-05
Vishay Semiconductors
www.vishay.com
3
Common Emitter S-Parameters
Z0 = 50 Ω, Tamb = 25 °C, unless otherwise specified
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG
deg deg deg deg
5 2 100 0.829 -29.5 6.22 158.9 0.028 74.2 0.965 -8.9
300 0.672 -79.5 4.80 126.1 0.064 53.3 0.812 -19.2
500 0.544 -113.6 3.54 105.6 0.078 45.2 0.707 -21.7
800 0.457 -145.4 2.43 88.0 0.087 45.7 0.648 -22.5
1000 0.442 -160.1 2.03 79.5 0.093 49.6 0.639 -23.9
1200 0.444 -172.5 1.77 72.2 0.101 54.0 0.634 -26.6
1500 0.463 172.1 1.49 61.7 0.117 60.6 0.619 -31.5
1800 0.474 159.0 1.31 52.3 0.142 65.5 0.596 -36.2
2000 0.493 153.0 1.22 45.0 0.168 65.6 0.559 -39.7
5 5 100 0.658 -45.1 12.07 149.5 0.025 69.6 0.909 -14.4
300 0.485 -106.3 7.43 113.4 0.048 55.1 0.668 -23.0
500 0.409 -139.6 4.93 96.8 0.061 55.7 0.572 -21.6
800 0.370 -166.3 3.23 82.7 0.080 61.4 0.537 -19.7
1000 0.369 -177.7 2.65 75.8 0.094 64.1 0.540 -20.6
1200 0.373 173.9 2.28 69.3 0.110 66.3 0.540 -23.3
1500 0.397 162.7 1.89 60.3 0.136 68.2 0.529 -28.0
1800 0.417 152.7 1.64 51.7 0.166 68.2 0.510 -31.5
2000 0.440 148.7 1.52 44.4 0.193 65.2 0.479 -33.4
5 10 100 0.480 -65.1 17.64 139.7 0.020 67.8 0.833 -19.2
300 0.376 -130.2 8.89 105.3 0.039 62.6 0.570 -22.9
500 0.355 -158.2 5.66 91.6 0.055 66.2 0.499 -19.4
800 0.336 -179.7 3.63 79.6 0.081 69.7 0.484 -16.6
1000 0.336 171.9 2.95 73.5 0.098 70.8 0.492 -17.6
1200 0.343 165.2 2.53 67.7 0.117 71.2 0.497 -20.5
1500 0.370 157.2 2.09 59.3 0.145 70.8 0.486 -25.1
1800 0.393 149.1 1.80 50.9 0.177 69.0 0.470 -28.2
2000 0.420 147.0 1.66 44.0 0.204 65.1 0.445 -29.1
5 15 100 0.390 -81.5 20.46 133.8 0.018 67.5 0.780 -21.3
300 0.344 -143.8 9.34 101.4 0.036 66.9 0.532 -21.6
500 0.340 -167.0 5.87 89.3 0.054 70.8 0.476 -17.3
800 0.332 174.4 3.74 78.1 0.081 73.0 0.470 -14.7
1000 0.333 167.1 3.04 72.2 0.100 73.1 0.481 -15.9
1200 0.336 161.9 2.60 66.7 0.119 72.8 0.485 -19.2
1500 0.367 155.3 2.14 58.5 0.149 71.8 0.476 -23.7
1800 0.391 147.4 1.84 50.6 0.181 69.5 0.461 -26.8
2000 0.416 145.8 1.70 43.6 0.207 65.3 0.437 -27.5
5 20 100 0.342 -95.6 21.91 129.4 0.016 68.3 0.743 -21.9
300 0.337 -152.5 9.44 99.0 0.035 70.3 0.515 -19.9
500 0.340 -172.8 5.85 87.8 0.053 73.6 0.469 -16.0
800 0.333 170.8 3.74 77.0 0.081 75.0 0.469 -13.6
1000 0.334 164.8 3.03 71.4 0.100 74.4 0.482 -15.1
1200 0.342 159.2 2.59 65.9 0.120 73.9 0.485 -18.4
1500 0.371 153.9 2.14 57.8 0.149 72.7 0.476 -23.1
1800 0.398 147.0 1.84 49.7 0.181 70.2 0.461 -26.2
2000 0.423 144.8 1.69 42.8 0.207 65.8 0.438 -27.0
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4
Document Number 85039
Rev. 1.5, 29-Apr-05
BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
10 2 100 0.827 -29.0 6.37 157.9 0.024 73.1 0.965 -7.7
300 0.651 -76.2 4.81 126.6 0.053 53.9 0.835 -15.4
500 0.534 -108.9 3.58 107.7 0.065 47.2 0.759 -17.6
800 0.457 -140.7 2.51 90.1 0.073 48.8 0.712 -19.4
1000 0.437 -157.5 2.09 81.4 0.079 52.7 0.701 -21.1
1200 0.438 -170.6 1.81 73.8 0.086 57.8 0.695 -23.4
1500 0.441 173.7 1.51 64.2 0.099 65.6 0.688 -27.4
1800 0.454 160.4 1.31 56.1 0.119 71.8 0.685 -32.3
2000 0.470 152.5 1.22 50.8 0.136 74.9 0.681 -35.5
10 5 100 0.658 -43.5 12.32 148.9 0.021 69.7 0.913 -12.5
300 0.462 -102.5 7.51 114.5 0.041 55.8 0.711 -18.3
500 0.390 -133.9 5.05 98.6 0.052 57.2 0.645 -17.4
800 0.355 -161.4 3.35 84.2 0.068 63.2 0.618 -17.8
1000 0.353 -174.5 2.74 77.2 0.081 66.6 0.613 -19.3
1200 0.357 175.4 2.34 70.8 0.094 69.3 0.613 -21.5
1500 0.372 163.3 1.94 62.6 0.115 72.2 0.610 -25.5
1800 0.390 153.6 1.67 55.0 0.139 74.0 0.607 -30.1
2000 0.406 146.9 1.54 50.3 0.157 74.5 0.604 -33.4
10 10 100 0.492 -61.8 18.05 139.5 0.018 66.6 0.846 -16.3
300 0.351 -126.2 9.08 106.1 0.034 62.3 0.628 -17.5
500 0.321 -153.8 5.81 92.9 0.047 67.0 0.584 -15.3
800 0.310 -175.0 3.77 80.8 0.069 71.5 0.573 -15.4
1000 0.316 174.4 3.06 74.6 0.084 73.1 0.575 -17.0
1200 0.324 166.7 2.60 68.9 0.100 74.0 0.575 -19.5
1500 0.344 157.6 2.15 61.3 0.124 74.8 0.575 -23.5
1800 0.362 149.3 1.85 54.3 0.149 75.0 0.572 -28.1
2000 0.380 143.7 1.70 49.6 0.167 74.3 0.571 -31.3
10 15 100 0.411 -76.1 21.04 133.5 0.016 66.5 0.799 -17.7
300 0.318 -140.0 9.59 102.1 0.031 67.0 0.596 -15.9
500 0.305 -162.9 6.01 90.2 0.046 71.4 0.565 -13.5
800 0.302 178.7 3.87 79.1 0.070 74.7 0.563 -14.1
1000 0.304 170.3 3.14 73.2 0.085 75.5 0.565 -15.8
1200 0.318 163.9 2.67 67.8 0.102 75.8 0.569 -18.2
1500 0.336 155.2 2.19 60.4 0.126 75.9 0.568 -22.5
1800 0.360 147.7 1.89 53.8 0.151 75.6 0.567 -27.0
2000 0.376 142.5 1.73 49.0 0.169 75.0 0.564 -30.4
10 20 100 0.365 -88.4 22.59 129.0 0.014 65.8 0.765 -18.1
300 0.311 -149.1 9.67 99.5 0.029 69.8 0.586 -14.4
500 0.305 -169.0 6.00 88.5 0.045 73.6 0.564 -12.3
800 0.305 175.4 3.85 78.0 0.069 76.2 0.564 -13.3
1000 0.312 167.2 3.12 72.4 0.085 76.9 0.570 -15.1
1200 0.322 161.4 2.65 66.9 0.102 76.8 0.571 -17.8
1500 0.344 154.1 2.18 59.6 0.126 76.6 0.571 -22.1
1800 0.366 146.6 1.87 52.9 0.151 76.2 0.570 -26.9
2000 0.381 141.8 1.72 48.3 0.170 75.5 0.568 -30.1
VCE/V IC/mA f/MHz S11 S21 S12 S22
LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG LIN
MAG
ANG
deg deg deg deg
BFS17A / BFS17AR / BFS17AW
Document Number 85039
Rev. 1.5, 29-Apr-05
Vishay Semiconductors
www.vishay.com
5
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Transition Frequency vs. Collector Current
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
0
50
100
150
200
250
300
0 20 40 60 80 100 120 140 160
96 12159
P-Total Power Dissipation ( mW )
tot
T
amb
- Ambient Temperature ( °C)
0
500
1000
1500
2000
2500
3000
3500
4000
0 5 10 15 20 25 30
I
C
– Collector Current ( mA )
13605
f – Transition Frequency ( MHz )
T
V
CE
=5V
f = 300 MHz
0.0
0.2
0.4
0.6
0.8
1.0
0 4 8 12 16 20
V
CB
– Collector Base Voltage(V)
13606
C – Collector Base Capacitance ( pF )
cb
f=1MHz
Figure 4. Noise Figure vs. Collector Current
0
1
2
3
4
5
0 5 10 15 20 25 30
I
C
– Collector Current ( mA )
13607
F – Noise Figure ( dB )
V
CE
=5V
f = 800 MHz
Z
S
=50Ω
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Document Number 85039
Rev. 1.5, 29-Apr-05
BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
VCE = 8 V, IC = 25 mA, Z0 = 50 Ω
S11
S12
S21
S22
Figure 5. Input Reflection Coefficient
Figure 6. Reverse Transmission Coefficient
13550
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
0.2 1 2 5
2.0 GHz
1.0
0.1
0.3
∞
13551
0°
90 °
180 °
–90°
0.08 0.16
–150 °
–120 ° –60°
–30 °
120 °
150 ° 30 °
2.0 GHz
0.5
1.0
0.1
1.5
Figure 7. Forward Transmission Coefficient
Figure 8. Output Reflection Coefficient
13552
0°
90 °
180 °
–90 °
10 20
–150 °
–120 ° –60°
–30°
120 °
150 °
60 °
30 °
2.0 GHz
0.3
0.1
13553
–j0.2
–j0.5
–j
–j2
–j5
0
j0.2
j0.5
j
j2
j5
0.2 0.5 1 5
2.0 GHz
0.8
0.1
∞
BFS17A / BFS17AR / BFS17AW
Document Number 85039
Rev. 1.5, 29-Apr-05
Vishay Semiconductors
www.vishay.com
7
Package Dimensions in mm (Inches)
Package Dimensions in mm (Inches)
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
BE
C
9511346
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
EB
C
9511347
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
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8
Document Number 85039
Rev. 1.5, 29-Apr-05
BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
Package Dimensions in mm (Inches)
96 12236
0.9 (0.035)
0.39 (0.015)
Mounting Pad Layout
0.95 (0.37) 0.95 (0.037)
2.0 (0.079)
1.00 (0.039)
10
0.10 (0.004) 0.10 (0.004)
2.05 (0.080)
2.00 (0.078)
1.25 (0.049)
0.30 (0.012)
1.3 (0.051)
S
O
M
e
t
h
o
d
E
BFS17A / BFS17AR / BFS17AW
Document Number 85039
Rev. 1.5, 29-Apr-05
Vishay Semiconductors
www.vishay.com
9
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
