BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT-23 Features * * * * * Low noise figure High power gain e3 Small collector capacitance Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 2 3 1 SOT-23 3 Applications 2 1 Wide band, low noise, small signal amplifiers up to UHF frquencies, high speed logic applications and oscillator applications. SOT-323 2 Mechanical Data 3 19150 Electrostatic sensitive device. Observe precautions for handling. Typ: BFS17A Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking: E2 Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFS17AR Case: SOT-23 Plastic case Weight: approx. 8.0 mg Marking: E5 Pinning: 1 = Collector, 2 = Base, 3 = Emitter Typ: BFS17AW Case: SOT-323 Plastic case Weight: approx. 6.0 mg Marking: WE2 Pinning: 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Symbol Value Unit Collector-base voltage Parameter Test condition VCBO 25 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 2.5 V IC 25 mA Ptot 200 mW Tj 150 C Tstg - 65 to + 150 C Collector current Total power dissipation Junction temperature Storage temperature range Document Number 85039 Rev. 1.5, 29-Apr-05 Tamb 60 C www.vishay.com 1 BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Maximum Thermal Resistance Parameter Junction ambient 1) Test condition Symbol Value Unit RthJA 450 K/W 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 m Cu Electrical DC Characteristics Tamb = 25 C, unless otherwise specified Parameter Max Unit VCE = 25 V, VBE = 0 ICES 100 A Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 2.5 V, IC = 0 IEBO 10 A Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter saturation voltage IC = 20 mA, IB = 2 mA Collector-emitter cut-off current Test condition DC forward current transfer ratio VCE = 1 V, IC = 2 mA VCE = 1 V, IC = 25 mA Symbol V(BR)CEO Min Typ. 15 VCEsat hFE 20 hFE 20 Symbol Min V 0.1 0.6 100 150 Typ. Max V Electrical AC Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Unit VCE = 5 V, IC = 2 mA, f = 300 MHz fT 1.5 GHz VCE = 5 V, IC = 14 mA, f = 300 MHz fT 3.5 GHz VCE = 5 V, IC = 30 mA, f = 300 MHz fT 3.2 GHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 0.6 pF Collector-emitter capacitance VCE = 5 V, f = 1 MHz Cce 0.1 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 1.1 pF Noise figure VCE = 5 V, IC = 2 mA, ZS = 50 , f = 800 MHz F 2.5 dB Power gain VCE = 10 V, IC = 14 mA, ZS = 50 , f = 800 MHz Gpe 13 dB Linear output voltage - two tone intermodulation test VCE = 10 V, IC = 14 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 V1 = V2 150 mV Third order intercept point VCE = 10 V, IC = 14 mA, f = 800 MHz IP3 23.5 dBm Transition frequency www.vishay.com 2 3 Document Number 85039 Rev. 1.5, 29-Apr-05 BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Common Emitter S-Parameters Z0 = 50 , Tamb = 25 C, unless otherwise specified VCE/V IC/mA f/MHz S11 S21 LIN MAG ANG LIN MAG ANG 5 5 5 5 2 100 0.829 -29.5 6.22 300 500 0.672 -79.5 0.544 -113.6 800 0.457 1000 1200 5 10 15 20 Document Number 85039 Rev. 1.5, 29-Apr-05 S22 LIN MAG ANG LIN MAG ANG 158.9 0.028 74.2 0.965 -8.9 4.80 126.1 3.54 105.6 0.064 53.3 0.812 -19.2 0.078 45.2 0.707 -145.4 2.43 -21.7 88.0 0.087 45.7 0.648 -22.5 0.442 -160.1 0.444 -172.5 2.03 79.5 0.093 49.6 0.639 -23.9 1.77 72.2 0.101 54.0 0.634 1500 0.463 -26.6 172.1 1.49 61.7 0.117 60.6 0.619 1800 -31.5 0.474 159.0 1.31 52.3 0.142 65.5 0.596 -36.2 2000 0.493 153.0 1.22 45.0 0.168 65.6 0.559 -39.7 100 0.658 -45.1 12.07 149.5 0.025 69.6 0.909 -14.4 300 0.485 -106.3 7.43 113.4 0.048 55.1 0.668 -23.0 500 0.409 -139.6 4.93 96.8 0.061 55.7 0.572 -21.6 800 0.370 -166.3 3.23 82.7 0.080 61.4 0.537 -19.7 1000 0.369 -177.7 2.65 75.8 0.094 64.1 0.540 -20.6 1200 0.373 173.9 2.28 69.3 0.110 66.3 0.540 -23.3 1500 0.397 162.7 1.89 60.3 0.136 68.2 0.529 -28.0 1800 0.417 152.7 1.64 51.7 0.166 68.2 0.510 -31.5 2000 0.440 148.7 1.52 44.4 0.193 65.2 0.479 -33.4 100 0.480 -65.1 17.64 139.7 0.020 67.8 0.833 -19.2 300 0.376 -130.2 8.89 105.3 0.039 62.6 0.570 -22.9 500 0.355 -158.2 5.66 91.6 0.055 66.2 0.499 -19.4 800 0.336 -179.7 3.63 79.6 0.081 69.7 0.484 -16.6 1000 0.336 171.9 2.95 73.5 0.098 70.8 0.492 -17.6 1200 0.343 165.2 2.53 67.7 0.117 71.2 0.497 -20.5 1500 0.370 157.2 2.09 59.3 0.145 70.8 0.486 -25.1 1800 0.393 149.1 1.80 50.9 0.177 69.0 0.470 -28.2 2000 0.420 147.0 1.66 44.0 0.204 65.1 0.445 -29.1 100 0.390 -81.5 20.46 133.8 0.018 67.5 0.780 -21.3 300 0.344 -143.8 9.34 101.4 0.036 66.9 0.532 -21.6 500 0.340 -167.0 5.87 89.3 0.054 70.8 0.476 -17.3 800 0.332 174.4 3.74 78.1 0.081 73.0 0.470 -14.7 1000 0.333 167.1 3.04 72.2 0.100 73.1 0.481 -15.9 1200 0.336 161.9 2.60 66.7 0.119 72.8 0.485 -19.2 1500 0.367 155.3 2.14 58.5 0.149 71.8 0.476 -23.7 1800 0.391 147.4 1.84 50.6 0.181 69.5 0.461 -26.8 2000 0.416 145.8 1.70 43.6 0.207 65.3 0.437 -27.5 100 0.342 -95.6 21.91 129.4 0.016 68.3 0.743 -21.9 300 0.337 -152.5 9.44 99.0 0.035 70.3 0.515 -19.9 500 0.340 -172.8 5.85 87.8 0.053 73.6 0.469 -16.0 800 0.333 170.8 3.74 77.0 0.081 75.0 0.469 -13.6 1000 0.334 164.8 3.03 71.4 0.100 74.4 0.482 -15.1 1200 0.342 159.2 2.59 65.9 0.120 73.9 0.485 -18.4 1500 0.371 153.9 2.14 57.8 0.149 72.7 0.476 -23.1 1800 0.398 147.0 1.84 49.7 0.181 70.2 0.461 -26.2 2000 0.423 144.8 1.69 42.8 0.207 65.8 0.438 -27.0 deg 5 S12 deg deg deg www.vishay.com 3 BFS17A / BFS17AR / BFS17AW Vishay Semiconductors VCE/V IC/mA f/MHz S11 S21 LIN MAG ANG ANG 10 10 10 10 www.vishay.com 4 2 100 0.827 -29.0 6.37 300 500 0.651 -76.2 0.534 -108.9 800 0.457 1000 5 10 15 20 S22 LIN MAG ANG 157.9 0.024 4.81 126.6 3.58 107.7 -140.7 2.51 0.437 -157.5 2.09 1200 0.438 -170.6 1.81 73.8 0.086 57.8 0.695 -23.4 1500 0.441 173.7 1.51 64.2 0.099 65.6 0.688 -27.4 1800 0.454 160.4 1.31 56.1 0.119 71.8 0.685 -32.3 2000 0.470 152.5 1.22 50.8 0.136 74.9 0.681 -35.5 100 0.658 -43.5 12.32 148.9 0.021 69.7 0.913 -12.5 300 0.462 -102.5 7.51 114.5 0.041 55.8 0.711 -18.3 500 0.390 -133.9 5.05 98.6 0.052 57.2 0.645 -17.4 800 0.355 -161.4 3.35 84.2 0.068 63.2 0.618 -17.8 1000 0.353 -174.5 2.74 77.2 0.081 66.6 0.613 -19.3 1200 0.357 175.4 2.34 70.8 0.094 69.3 0.613 -21.5 1500 0.372 163.3 1.94 62.6 0.115 72.2 0.610 -25.5 1800 0.390 153.6 1.67 55.0 0.139 74.0 0.607 -30.1 2000 0.406 146.9 1.54 50.3 0.157 74.5 0.604 -33.4 100 0.492 -61.8 18.05 139.5 0.018 66.6 0.846 -16.3 300 0.351 -126.2 9.08 106.1 0.034 62.3 0.628 -17.5 500 0.321 -153.8 5.81 92.9 0.047 67.0 0.584 -15.3 800 0.310 -175.0 3.77 80.8 0.069 71.5 0.573 -15.4 1000 0.316 174.4 3.06 74.6 0.084 73.1 0.575 -17.0 1200 0.324 166.7 2.60 68.9 0.100 74.0 0.575 -19.5 1500 0.344 157.6 2.15 61.3 0.124 74.8 0.575 -23.5 1800 0.362 149.3 1.85 54.3 0.149 75.0 0.572 -28.1 2000 0.380 143.7 1.70 49.6 0.167 74.3 0.571 -31.3 100 0.411 -76.1 21.04 133.5 0.016 66.5 0.799 -17.7 300 0.318 -140.0 9.59 102.1 0.031 67.0 0.596 -15.9 500 0.305 -162.9 6.01 90.2 0.046 71.4 0.565 -13.5 800 0.302 178.7 3.87 79.1 0.070 74.7 0.563 -14.1 1000 0.304 170.3 3.14 73.2 0.085 75.5 0.565 -15.8 1200 0.318 163.9 2.67 67.8 0.102 75.8 0.569 -18.2 1500 0.336 155.2 2.19 60.4 0.126 75.9 0.568 -22.5 1800 0.360 147.7 1.89 53.8 0.151 75.6 0.567 -27.0 2000 0.376 142.5 1.73 49.0 0.169 75.0 0.564 -30.4 100 0.365 -88.4 22.59 129.0 0.014 65.8 0.765 -18.1 300 0.311 -149.1 9.67 99.5 0.029 69.8 0.586 -14.4 500 0.305 -169.0 6.00 88.5 0.045 73.6 0.564 -12.3 800 0.305 175.4 3.85 78.0 0.069 76.2 0.564 -13.3 1000 0.312 167.2 3.12 72.4 0.085 76.9 0.570 -15.1 1200 0.322 161.4 2.65 66.9 0.102 76.8 0.571 -17.8 1500 0.344 154.1 2.18 59.6 0.126 76.6 0.571 -22.1 1800 0.366 146.6 1.87 52.9 0.151 76.2 0.570 -26.9 2000 0.381 141.8 1.72 48.3 0.170 75.5 0.568 -30.1 deg 10 S12 LIN MAG LIN MAG ANG 73.1 0.965 -7.7 0.053 53.9 0.835 -15.4 0.065 47.2 0.759 -17.6 90.1 0.073 48.8 0.712 -19.4 81.4 0.079 52.7 0.701 -21.1 deg deg deg Document Number 85039 Rev. 1.5, 29-Apr-05 BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 5 F - Noise Figure ( dB ) Ptot -Total Power Dissipation ( mW ) 300 250 200 150 100 50 0 3 2 V CE = 5 V f = 800 MHz ZS = 50 1 0 0 20 40 60 80 100 120 140 160 Tamb - Ambient Temperature ( C ) 96 12159 0 13607 Figure 1. Total Power Dissipation vs. Ambient Temperature f T - Transition Frequency ( MHz ) 4 5 10 15 20 25 30 I C - Collector Current ( mA ) Figure 4. Noise Figure vs. Collector Current 4000 3500 3000 2500 2000 1500 1000 V CE = 5 V f = 300 MHz 500 0 0 13605 5 10 15 20 25 I C - Collector Current ( mA ) 30 Ccb - Collector Base Capacitance ( pF ) Figure 2. Transition Frequency vs. Collector Current 1.0 0.8 0.6 0.4 0.2 f = 1 MHz 0.0 0 13606 4 8 12 16 20 V CB - Collector Base Voltage ( V ) Figure 3. Collector Base Capacitance vs. Collector Base Voltage Document Number 85039 Rev. 1.5, 29-Apr-05 www.vishay.com 5 BFS17A / BFS17AR / BFS17AW Vishay Semiconductors VCE = 8 V, IC = 25 mA, Z0 = 50 S11 S21 j 90 j0.5 120 j2 0.1 150 j0.2 60 30 j5 0.3 2.0 GHz 0.2 1.0 0 1 2 5 180 2.0 GHz 10 20 0 0.3 -j0.2 -j5 0.1 -150 -j0.5 -30 -j2 -120 -j 13550 -60 -90 13552 Figure 7. Forward Transmission Coefficient Figure 5. Input Reflection Coefficient S12 S22 90 120 j 2.0 GHz j0.5 1.5 150 j2 30 1.0 j0.2 j5 0.5 0.1 180 0.08 0.16 0 0 0.2 0.5 1 0.8 5 2.0 GHz 0.1 -j5 -j0.2 -150 -30 -j0.5 -120 Figure 6. Reverse Transmission Coefficient www.vishay.com 6 -j2 -60 -90 13551 13553 -j Figure 8. Output Reflection Coefficient Document Number 85039 Rev. 1.5, 29-Apr-05 BFS17A / BFS17AR / BFS17AW Vishay Semiconductors 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.95 (.037) 1.15 (.045) Package Dimensions in mm (Inches) 2.6 (.102) 2.35 (.092) 0.4 (.016) ISO Method E 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.52 (0.020) 0.4 (.016) C B 1.20(.047) 1.43 (.056) 0.9 (0.035) 2.0 (0.079) E 0.95 (.037) 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 9511346 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.95 (.037) 1.15 (.045) Package Dimensions in mm (Inches) 2.6 (.102) 2.35 (.092) 0.4 (.016) ISO Method E 3.1 (.122) Mounting Pad Layout 2.8 (.110) 0.52 (0.020) 0.4 (.016) C E 0.95 (.037) 1.20(.047) 1.43 (.056) 0.9 (0.035) 2.0 (0.079) B 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 9511347 Document Number 85039 Rev. 1.5, 29-Apr-05 www.vishay.com 7 BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Package Dimensions in mm (Inches) 0.10 (0.004) 1.00 (0.039) 0.10 (0.004) SO Method E 10 Mounting Pad Layout 2.05 (0.080) 0.39 (0.015) 1.3 (0.051) 8 2.0 (0.079) 0.95 (0.37) 0.30 (0.012) www.vishay.com 2.00 (0.078) 1.25 (0.049) 0.9 (0.035) 0.95 (0.037) 96 12236 Document Number 85039 Rev. 1.5, 29-Apr-05 BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85039 Rev. 1.5, 29-Apr-05 www.vishay.com 9 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1