BU406/406H/408 — NPN Epitaxial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
BU406/406H/408 Rev. B0 1
April 2012
BU406/406H/408
NPN Epitaxial Silicon Transistor
Features
• High Voltage Switching
• Use In Horizontal Deflection Output Stage
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Electrical Characteristics TC = 25°C unles s othe rwis e note d
Symbol Parameter Value Units
VCBO Collector-Base Voltage 400 V
VCEO Collector-Emitter Voltage 200 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current (DC) 7 A
ICP Collector Current (Pulse) 10 A
IB Base Current 4 A
PC Collector Dissipation 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 55 to 150 °C
Symbol Parameter Test Condition Min. Max. Units
ICES Collector Cut-off Current VCE = 400V, VBE = 0
VCE = 250V, VBE = 0
VCE = 250V, VBE = 0 @ TC=150°C
5
100
1
mA
μA
mA
IEBO Emitter Cut-off Current VBE = 6V, IC = 0 1 mA
VCE(sat) Collector-Emitter Saturation Voltage
: BU406
: BU406H
: BU408
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.8A
IC = 6A, IB = 1.2A
1
1
1
V
V
V
VBE(sat) Base-Emitter Saturation Voltage
: BU406
: BU406H
: BU408
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.5A
IC = 6A, IB = 1.2A
1.2
1.2
1.5
V
V
V
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 10 MHz
tOFF Turn Off Time : BU406
: BU406H
: BU408
IC = 5A, IB = 0.5A
IC = 5A, IB = 0.8A
IC = 6A, IB = 1.2A
0.75
0.4
0.4
μs
μs
μs
1.Base 2.Collector 3.Emitter
1TO-220
BU406/406H/408 — NPN Epitaxial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
BU406/406H/408 Rev. B0 2
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage Figure 4. Collector Ou tput Capa cita nce
Figure 5. Safe Operating Area Figure 6. Power Derating
012345678910
0
1
2
3
4
5
I
B
= 180mA
I
B
= 140mA
I
B
= 60mA
I
B
= 120mA
I
B
= 40mA
I
B
= 80mA
I
B
= 160mA
I
B
= 20mA
I
B
= 100mA
I
B
= 200mA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
1 10 100 1000 10000
1
10
100
1000
VCE = 5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000 10000
10
100
1000
10000
VCE(sat)
VBE(sat)
IC = 10 IB
VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
1 10 100
1
10
100
1000
f = 1MHz
Cob [pF], CAPACITANCE
VCB[V], COLLECTOR-B ASE VOLTAGE
1 10 100
0.1
1
10
VCE MAX.
S/b Limited
10ms
IC Max. (Continuous)
IC Max. (Pulsed)
Dissipation Limited
100ms
1ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
60
70
80
PC [W], P OWER D IS S IPATIO AN
TC[oC], CASE TEMPERATURE
BU406/406H/408 — NPN Epitaxial Silicon Transistor
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
BU406/406H/408 Rev. B0 3
Physical Dimensions
4.50 ±0.2
0
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10 2.40 ±0.20
10.00 ±0.20
1.27 ±0.10
ø3.60 ±0.10
(8.70)
2.80 ±0.1015.90 ±0.20
10.08 ±0.30 18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20 ±0.2013.08 ±0.20
1.30 ±0.10
1.30 +0.1
0
–0.0
5
0.50 +0.10
–0.05
2.54TYP
[2.54 ±0.20]2.54TYP
[2.54 ±0.20]
TO-220
Dimensions in Millimeters
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I61
