BAT54TW/ADW/CDW/SDW/BRW
SCHOTTKY DIODE
FEATURES
Power dissipation
P
D: 200 mW (Tamb=25℃)
Forward Current
I
F: 200 m A
Reverse Voltage
V
R: 30 V
Operating and storage junction temperature range
T
J, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100µA 30 V
Reverse voltage leakage current IR V
R=25V 2
µA
Forward voltage VF
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
240
320
400
500
1000
mV
Diode capacitance CD V
R=1V, f=1MHz 10 pF
Reverse recovery time t r r IF =10mA through IR=10mA
to IR=1.0mA RC=100Ω
5
nS
SO
T
-363
