APT33GF120BR APT33GF120BR(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. 1200V 52A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-247 * Low Forward Voltage Drop * Ultra Low Leakage Current * Low Tail Current * RBSOA and SCSOA Rated * High Freq. Switching to 20KHz G C C E G E MAXIMUM RATINGS (IGBT) Symbol All Ratings: TC = 25C unless otherwise specified. APT33GF120BR(G) Parameter VCES Collector-Emitter Voltage 1200 VCGR Collector-Gate Voltage (RGE = 20K) 1200 VGE Gate Emitter Voltage 20 IC1 Continuous Collector Current @ TC = 25C 52 IC2 Continuous Collector Current @ TC = 105C 33 1 Pulsed Collector Current ILM RBSOA Clamped Inductive Load Current @ RG = 11 TC = 125 C EAS Single Pule Avalanche Energy PD Total Power Dissipation TJ,TSTG TL Volts Amps 104 @ TC = 25C ICM UNIT 66 2 65 mJ 297 Watts -55 to 150 Operating and Storage Junction Temperature Range C 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS (IGBT) VGE(TH) VCE(ON) I CES I GES TYP MAX 5.5 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) 2.7 3.2 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) 3.3 3.9 Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) MIN 1200 4.5 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) 0.5 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) 5.0 Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT Volts mA nA 3-2003 BVCES Characteristic / Test Conditions 052-6206 Rev D Symbol APT33GF120BR(G) DYNAMIC CHARACTERISTICS (IGBT) Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance 3 Qg Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge td(on) tr td(off) tf td(on) tr td(off) tf Turn-on Delay Time Rise Time MIN Capacitance VGE = 0V 230 VCE = 25V f = 1 MHz 110 Gate Charge VGE = 15V 170 I C = I C2 100 Resistive Switching (25C) 24 VGE = 15V 85 Turn-off Delay Time I C = I C2 25 60 Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V Fall Time 74 I C = I C2 2.8 Eoff Turn-off Switching Energy TJ = +150C 2.8 Ets Total Switching Losses tr td(off) Turn-on Delay Time Rise Time Turn-off Delay Time ns 210 R G = 10 td(on) ns 125 RG =10 Turn-on Switching Energy Eon nC 170 Turn-on Delay Time Rise Time UNIT pF 19 VCC = 0.5VCES Turn-off Delay Time MAX 1855 VCC = 0.8VCES Fall Time TYP mJ 5.6 27 Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES 65 VGE = 15V ns 190 I C = I C2 Fall Time R G = 10 70 Ets Total Switching Losses TJ = +25C 5.2 mJ gfe Forward Transconductance 8.5 20 S MIN TYP tf VCE = 20V, I C = 25A THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RJC Junction to Case RJA Junction to Ambient 3-2003 WT 052-6206 Rev D Characteristic MAX UNIT 0.42 C/W Package Weight 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 IC = IC2, VCC = 50V, RGE = 25, L = 120H, Tj = 25C 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 40 0.22 oz 5.90 gm 12V VGE=17, 15 & 13V 11V 40 10V 20 9V 8V 7V 0 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) TC=-55C TC=+25C TC=+150C 40 20 0 Cies C, CAPACITANCE (pF) 1,000 f = 1MHz Coes 100 Cres 10 .01 0.1 1.0 10 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage 11V 40 10V 20 9V 8V 7V LIMITED BY VCE (SAT) 100s 10 1ms TC =+25C TJ =+150C SINGLE PULSE 10ms 1 1 10 100 1200 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Maximum Forward Safe Operating Area VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Output Characteristics @ VGE = 15V 3,000 VGE=17, 15 & 13V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 2, Typical Output Characteristics (TJ = 150C) 100 OPERATION 80 60 12V 0 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics (TJ = 25C) 250Sec. Pulse Test VGE = 15V APT33GF120BR(G) APT33GF120BR 60 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) 60 20 IC = IC2 TJ = +25C 16 VCE=240V VCE=600V 12 VCE =960V 8 4 0 0 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage D=0.5 0.1 0.2 0.05 0.1 0.05 0.01 0.005 t2 SINGLE PULSE 0.001 10 -5 t1 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10 -2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 052-6206 Rev D 0.01 3-2003 Note: 0.02 PDM ZJC, THERMAL IMPEDANCE (C/W) 0.5 4.0 IC1 2.0 IC2 0.5 IC2 1.5 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 10, Breakdown Voltage vs Junction Temperature IC1 1 IC2 0.5 IC2 VCC = 0.66 VCES VGE = +15V RG = 10 25 VCC = 0.66 VCES VGE = +15V TJ = +25C IC = IC2 12 Eoff 8 Eon 4 0 20 40 60 80 100 RG, GATE RESISTANCE (OHMS) Figure 11, Typical Switching Energy Losses vs Gate Resistance 4 SWITCHING ENERGY LOSSES (mJ) 20 20 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 9, Maximum Collector Current vs Case Temperature 16 SWITCHING ENERGY LOSSES (mJ) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature 1.2 1.1 40 0 1.0 TOTAL SWITCHING ENERGY LOSSES (mJ) APT33GF120BR(G) APT33GF120BR 60 IC, COLLECTOR CURRENT (AMPERES) VCE(SAT), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (VOLTS) 5.0 0 VCC = 0.66 VCES VGE = +15V TJ = +125C RG = 10 3 2 Eoff 1 Eon 0 0.1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 12, Typical Switching Energy Losses vs. Junction Temperature 0 10 20 30 40 IC, COLLECTOR CURRENT (AMPERES) Figure 13, Typical Switching Energy Losses vs Collector Current IC, COLLECTOR CURRENT (AMPERES) 052-6206 Rev D 3-2003 100 For Both: Duty Cycle = 50% TJ = +125C Tsink = +90C Gate drive as specified Power dissapation = 83W ILOAD = IRMS of fundamental 10 1 0.1 1.0 10 F, FREQUENCY (KHz) Figure 14,Typical Load Current vs Frequency 100 1000 APT33GF120BR APT33GF120BR(G) VCHARGE *DRIVER SAME TYPE AS D.U.T. VCC = 0.66 VCES Et s = E on + E off A A 90% VC B 10% B t d (on) t d(off) IC VC IC 100uH 90% D.U.T. VCE (SAT) tr VC A D.U.T. DRIVER* 10% IC RG V CLAMP 90% 10% tf E on t=2us E off Figure 15, Switching Loss Test Circuit and Waveforms 2 VCE(off) VGE(on) V CC 90% .5 VCES RL = I C2 2 D.U.T. 10% VGE(off) tr t d(off) 1 tf Figure 16, Resistive Switching Time Test Circuit and Waveforms T0-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Collector Emitter 3-2003 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 052-6206 Rev D t d (on) Collector 1 From Gate Drive Circuitry VCE(on) RG