Order this document by MJ2500/D SEMICONDUCTOR TECHNICAL DATA $%! #!& !""#!" . . . for use as output devices in complementary general purpose amplifier applications. * High DC Current Gain -- hFE = 4000 (Typ) @ IC = 5.0 Adc * Monolithic Construction with Built-in Base-Emitter Shunt Resistors IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS Symbol MJ2500 MJ3000 MJ2501 MJ3001 Unit VCEO 60 80 Vdc Collector-Base Voltage VCB 60 80 Vdc Emitter-Base Voltage Rating Collector-Emitter Voltage VEB 5.0 Vdc Collector Current IC 10 Adc Base Current IB 0.2 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 150 0.857 Watts W/_C TJ, Tstg - 55 to + 200 _C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case JC 1.17 _C/W Operating and Storage Junction Temperature Range *Motorola Preferred Device 10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60 - 80 VOLTS 150 WATTS THERMAL CHARACTERISTICS PNP MJ2500 MJ2501 COLLECTOR BASE NPN MJ3000 MJ3001 CASE 1-07 TO-204AA (TO-3) COLLECTOR BASE [ 2.0 k [ 50 [ 2.0 k [ 50 EMITTER EMITTER Figure 1. Darlington Circuit Schematic Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 60 80 -- -- Vdc -- -- -- -- 1.0 1.0 5.0 5.0 IEBO -- 2.0 mAdc ICEO -- -- 1.0 1.0 mAdc hFE 1000 -- -- VCE(sat) -- -- 2.0 4.0 Vdc VBE(on) -- 3.0 Vdc OFF CHARACTERISTICS Collector Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) MJ2500, MJ3000 MJ2501, MJ3001 Collector-Emitter Leakage Current (VEB = 60 Vdc, RBE = 1.0 k ohm) (VEB = 80 Vdc, RBE = 1.0 k ohm) (VEB = 60 Vdc, RBE = 1.0 k ohm, TC = 150_C) (VEB = 80 Vdc, RBE = 1.0 k ohm, TC = 150_C) MJ2500, MJ3000 MJ2501, MJ3001 MJ2500, MJ3000 MJ2501, MJ3001 ICER Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) (1) ON CHARACTERISTICS MJ2500, MJ3000 MJ2501, MJ3001 DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 20 mAdc) (IC = 10 Adc, IB = 50 mAdc) Base Emitter Voltage (IC = 5.0 Adc, VCE = 3.0 Vdc) (1)Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. hFE, SMALL-SIGNAL CURRENT GAIN 50,000 hFE, DC CURRENT GAIN 20,000 10,000 TJ = 150C 5000 25C 2000 1000 500 - 55C 200 VCE = 3.0 Vdc 100 50 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 5.0 3000 2000 1000 500 300 200 TC = 25C VCE = 3.0 Vdc IC = 5.0 Adc 100 50 30 103 10 104 105 f, FREQUENCY (Hz) Figure 2. DC Current Gain IC, COLLECTOR CURRENT (AMP) V, VOLTAGE (VOLTS) TJ = 25C 2.5 2.0 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.5 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 5.0 10 IC, COLLECTOR CURRENT (AMP) Figure 4. "On" Voltages There are two limitations on the power handling ability of a transistor: junction temperature and secondary breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation 2 10 7.0 5.0 3.0 SECONDARY BREAKDOWN LIMITED THERMALLY LIMITED @ TC = 25C BONDING WIRE LIMITED 2.0 1.0 0.7 0.5 0.3 0.2 MJ2500, MJ3000 MJ2501, MJ3001 TJ = 200C 2.0 106 Figure 3. Small-Signal Current Gain 3.5 3.0 mAdc 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. DC Safe Operating Area than the curves indicate. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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