VS-1N1...A, VS-1N36..A Series
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Revision: 11-Jan-18 1Document Number: 93493
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A
FEATURES
• Voltage ratings from 50 V to 1000 V
• High surge capability
• Low thermal impedance
• High temperature rating
• Can be supplied as JAN and JAN-TX devices in
accordance with MIL-S-19500/260
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
• JEDEC® registered values are in bold
ELECTRICAL SPECIFICATIONS
Notes
• JEDEC® registered values are in bold
• Basic part number indicates cathode to case; for anode to case, add “R” to part number, e.g., 1N1199RA
PRIMARY CHARACTERISTICS
IF(AV) 12 A
Package DO-4 (DO-203AA)
Circuit configuration Single
DO-4 (DO-203AA)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IF(AV)
12 A
TC150 °C
IFSM
50 Hz 230 A
60 Hz 240
I2t50 Hz 260 A2s
60 Hz 240
TJ-65 to +200 °C
VRRM Range 50 to 1000 V
VOLTAGE RATINGS
TYPE NUMBER
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
(TC = -65 °C TO 200 °C)
V
VR(RMS), MAXIMUM RMS
REVERSE VOLTAGE
(TC = -65 °C TO 200 °C)
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
(TC = -65 °C TO 200 °C)
V
VRM, MAXIMUM DIRECT
REVERSE VOLTAGE
(TC = -65 °C TO 200 °C)
V
VS-1N1199A 50 35 100 50
VS-1N1200A 100 70 200 100
VS-1N1201A 150 105 300 150
VS-1N1202A 200 140 350 200
VS-1N1203A 300 210 450 300
VS-1N1204A 400 280 600 400
VS-1N1205A 500 350 700 500
VS-1N1206A 600 420 800 600
VS-1N3670A 700 490 900 700
VS-1N3671A 800 560 1000 800
VS-1N3672A 900 630 1100 900
VS-1N3673A 1000 700 1200 1000
VS-1N3624 1000 1200 1400 1000
VS-1N1...A, VS-1N36..A Series
www.vishay.com Vishay Semiconductors
Revision: 11-Jan-18 2Document Number: 93493
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• JEDEC® registered values are in bold
(1) I2t for time tx = I2t x tx
(2) Maximum peak reverse current (IRM) under same conditions 2 x rated IR(AV)
Note
• JEDEC registered values are in bold
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature IF(AV) 180° sinusoidal conduction 12 A
150 °C
Maximum peak one cycle non-repetitive
surge current IFSM
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse Following any rated load
condition and with rated
VRRM applied
230
A
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse 240
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse Following any rated load
condition and with VRRM
applied following surge = 0 V
275
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse 285
Maximum I2t for fusing
I2t
t = 10 ms With rated VRRM applied
following surge,
initial TJ = 200 °C
260
A2s
t = 8.3 ms 240
Maximum I2t for individual
device fusing
t = 10 ms With VRRM = 0 V following
surge, initial TJ = 200 °C
370
t = 8.3 ms 340
Maximum I2t for individual
device fusing I2t (1) t = 0.1 ms to 10 ms, VRRM = 0 V following surge 3715 A2s
Maximum forward voltage drop VFM IF(AV) = 12 A (38 A peak), TC = 25 °C 1.35 V
Maximum average
reverse current
VRRM = 50 V
IR(AV) (2) Maximum rated IF(AV) and TC
3.0
mA
VRRM = 100 V 2.5
VRRM = 150 V 2.25
VRRM = 200 V 2.0
VRRM = 300 V 1.75
VRRM = 400 V 1.5
VRRM = 500 V 1.25
VRRM = 600 V 1.0
VRRM = 700 V 0.9
VRRM = 800 V 0.8
VRRM = 900 V 0.7
VRRM = 1000 V 0.6
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating case and
storage temperature range TC, TStg -65 to 200 °C
Maximum internal thermal
resistance, junction to case RthJC DC operation 2.0
°C/W
Thermal resistance,
case to sink RthCS Mounting surface, smooth, flat and greased 0.5
Mounting torque
minimum Torque applied to nut; non-lubricated threads 1.36 (12)
N · m
(lbf · in)
maximum 1.69 (15)
minimum Torque applied to nut; lubricated threads 1.07 (9.45)
maximum 1.30 (11.55)
minimum Torque applied to device case; lubricated threads 1.17 (10.35)
maximum 1.43 (12.65)
Approximate weight 7.0 g
0.25 oz.
Case style JEDEC®DO-4 (DO-203AA)
VS-1N1...A, VS-1N36..A Series
www.vishay.com Vishay Semiconductors
Revision: 11-Jan-18 3Document Number: 93493
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
Fig. 2 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
Fig. 3 - Maximum High Level Forward Power Loss vs.
Average Forward Current
Fig. 4 - Maximum Forward Voltage vs. Forward Current
Fig. 5 - Maximum Transient Thermal Impedance,
Junction to Case vs. Pulse Duration
Fig. 6 - Maximum Non-Repetitive 50 Hz Surge Current vs.
Number of Current Pulses
Maximum Allowable Case Temperature (°C)
Average
Forward Current Over Full Cycle (A)
+180 °C Wave
+180 °C Wave
+60 °C &
Wave
+120 °C &
Wave
DC
Conduction Period
0
0
2468 1210 14 1816 20
200
220
180
160
140
120
100
Average Forward Power Loss
Over Full Cycle (W)
Average
Forward Current Over Full Cycle (A)
TJ = 200°C
Conduction Period
0
0
24 6810
12
14
10
8
6
4
2
+180 °C Wave
+180 °C Wave
+120 °C & Wave
+60 °C & Wave
DC
Average Forward Power Loss
Over Full Cycle (W)
Average
Forward Current Over Full Cycle (A)
102
10
1.0
1.0 10
2
5
25 102
25 103
25
2
5
103
104
102
2
5
2
5
+180 °C Wave
+180 °C Wave
+120 °C & Wave
+120 °C & Wave
T
J
= 200°C
Conduction Period
DC
IF - Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
102
103
10
1.0
2
5
2
5
2
5
25 °C
TJ = 200 °C
t
-
Square Wave Pulse Duration (s)
Z
thJC
-
Transient Thermal Impedance (°C/W)
1.0
10
10-1
10-2
2
5
25 25 25 25 25
2
5
2
5
1 1010-1
10-2
10-3
10-4
Steady State Value = 2.0 °C/W
Peak Half Sine Wave Forward Current (A)
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
2 4 6 8 10 20 40 6011
100
200
300
0
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge
60 Hz
50 Hz
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95311
Document Number: 95311 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 30-Jun-08 1
DO-203AA (DO-4)
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
3.30 (0.13)
4.00 (0.16)
5.50 (0.22) MIN.
10.20 (0.40)
MAX.
11.50 (0.45)
10.70 (0.42)
10/32" UNF-2A
For metric devices: M5 x 0.8
0.8 ± 0.1
(0.03 ± 0.004)
R 0.40
R (0.02)
Ø 6.8 (0.27)
Ø 1.80 ± 0.20
(Ø 0.07 ± 0.01)
3.50 (0.14)
20.30 (0.80) MAX.
11 (0.43)
2
+ 0.3
0
(0.08 )
+ 0.01
0
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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