© Semiconductor Components Industries, LLC, 2012
August, 2012 − Rev. 10
1Publication Order Number:
MUN5211DW1T1/D
MUN5211DW1T1G,
SMUN5211DW1T1G,
NSVMUN5211DW1T1GSeries
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5211DW1T1G
series, two BRT devices are housed in the SOT−363 package which is
ideal for low power surface mount applications where board space is at
a premium.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•AEC−Q101 Qualified and PPAP Capable
•S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted, common for Q1 and Q2)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Q1
R1
R2
R2
R1
Q2
(1)(2)(3)
(4) (5) (6)
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
xx M G
G
1
6
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
xx = Device Code
M = Date Code*
G= Pb−Free Package
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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2
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated) Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient RqJA 670 (Note 1)
490 (Note 2)
°C/W
Characteristic (Both Junctions Heated) Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient RqJA 493 (Note 1)
325 (Note 2)
°C/W
Thermal Resistance, Junction-to-Lead RqJL 188 (Note 1)
208 (Note 2)
°C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 °C
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping†
MUN5211DW1T1G,
SMUN5211DW1T1G
SOT−363
(Pb−Free)
7A 10 10 3,000 / Tape & Reel
MUN5212DW1T1G,
NSVMUN5212DW1T1G
SOT−363
(Pb−Free)
7B 22 22 3,000 / Tape & Reel
MUN5213DW1T1G,
SMUN5213DW1T1G
SOT−363
(Pb−Free)
7C 47 47 3,000 / Tape & Reel
MUN5214DW1T1G,
SMUN5214DW1T1G
SOT−363
(Pb−Free)
7D 10 47 3,000 / Tape & Reel
MUN5215DW1T1G SOT−363
(Pb−Free)
7E 10 ∞3,000 / Tape & Reel
MUN5216DW1T1G,
SMUN5216DW1T1G
SOT−363
(Pb−Free)
7F 4.7 ∞3,000 / Tape & Reel
MUN5230DW1T1G,
SMUN5230DW1T1G
SOT−363
(Pb−Free)
7G 1.0 1.0 3,000 / Tape & Reel
MUN5231DW1T1G
SMUN5231DW1T1G
SOT−363
(Pb−Free)
7H 2.2 2.2 3,000 / Tape & Reel
MUN5232DW1T1G,
SMUN5232DW1T1G
SOT−363
(Pb−Free)
7J 4.7 4.7 3,000 / Tape & Reel
MUN5233DW1T1G,
SMUN5233DW1T1G
SOT−363
(Pb−Free)
7K 4.7 47 3,000 / Tape & Reel
MUN5234DW1T1G SOT−363
(Pb−Free)
7L 22 47 3,000 / Tape & Reel
MUN5235DW1T1G,
SMUN5235DW1T1G
SOT−363
(Pb−Free)
7M 2.2 47 3,000 / Tape & Reel
MUN5236DW1T1G SOT−363
(Pb−Free)
7N 100 100 3,000 / Tape & Reel
MUN5237DW1T1G,
SMUN5237DW1T1G
SOT−363
(Pb−Free)
7P 47 22 3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
− − 100
nAdc
Collector-Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
− − 500
nAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN5211DW1T1G, SMUN5211DW1T1G
MUN5212DW1T1G, NSVMUN5212DW1T1G
MUN5213DW1T1G, SMUN5213DW1T1G
MUN5214DW1T1G, SMUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G, SMUN5216DW1T1G
MUN5230DW1T1G, SMUN5230DW1T1G
MUN5231DW1T1G, SMUN5231DW1T1G
MUN5232DW1T1G, SMUN5232DW1T1G
MUN5233DW1T1G, SMUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G, SMUN5235DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G, SMUN5237DW1T1G
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO 50 − −
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO 50 − −
Vdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN5211DW1T1G, SMUN5211DW1T1G
MUN5212DW1T1G, NSVMUN5212DW1T1G
MUN5213DW1T1G, SMUN5213DW1T1G
MUN5214DW1T1G, SMUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G, SMUN5216DW1T1G
MUN5230DW1T1G, SMUN5230DW1T1G
MUN5231DW1T1G, SMUN5231DW1T1G
MUN5232DW1T1G, SMUN5232DW1T1G
MUN5233DW1T1G, SMUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G, SMUN5235DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G, SMUN5237DW1T1G
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
MUN5211DW1T1G, SMUN5211DW1T1G
MUN5212DW1T1G, NSVMUN5212DW1T1G
MUN5213DW1T1G, SMUN5213DW1T1G
MUN5214DW1T1G, SMUN5214DW1T1G
MUN5235DW1T1G, SMUN5235DW1T1G
MUN5236DW1T1G
(IC = 10 mA, IB = 5 mA)
MUN5230DW1T1G, SMUN5230DW1T1G
MUN5231DW1T1G, SMUN5231DW1T1G
MUN5237DW1T1G, SMUN5237DW1T1G
(IC = 10 mA, IB = 1 mA)
MUN5215DW1T1G
MUN5216DW1T1G, SMUN5216DW1T1G
MUN5232DW1T1G, SMUN5232DW1T1G
MUN5233DW1T1G, SMUN5233DW1T1G
MUN5234DW1T1G
VCE(sat)
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Vdc
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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Characteristic UnitMaxTypMinSymbol
ON CHARACTERISTICS (Note 3)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
MUN5211DW1T1G, SMUN5211DW1T1G
MUN5212DW1T1G, NSVMUN5212DW1T1G
MUN5214DW1T1G, SMUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G, SMUN5216DW1T1G
MUN5230DW1T1G, SMUN5230DW1T1G
MUN5231DW1T1G, SMUN5231DW1T1G
MUN5232DW1T1G, SMUN5232DW1T1G
MUN5233DW1T1G, SMUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G, SMUN5235DW1T1G
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
MUN5213DW1T1G, SMUN5213DW1T1G
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
MUN5236DW1T1G
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
MUN5237DW1T1G, SMUN5237DW1T1G
VOL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
MUN5211DW1T1G, SMUN5211DW1T1G
MUN5212DW1T1G, NSVMUN5212DW1T1G
MUN5213DW1T1G, SMUN5213DW1T1G
MUN5214DW1T1G, SMUN5214DW1T1G
MUN5233DW1T1G, SMUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G, SMUN5235DW1T1G
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
MUN5230DW1T1G, SMUN5230DW1T1G
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MUN5215DW1T1G
MUN5216DW1T1G, SMUN5216DW1T1G
MUN5231DW1T1G, SMUN5231DW1T1G
MUN5232DW1T1G, SMUN5232DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G, SMUN5237DW1T1G
VOH
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Vdc
Input Resistor
MUN5211DW1T1G, SMUN5211DW1T1G
MUN5212DW1T1G, NSVMUN5212DW1T1G
MUN5213DW1T1G, SMUN5213DW1T1G
MUN5214DW1T1G, SMUN5214DW1T1G
MUN5215DW1T1G
MUN5216DW1T1G, SMUN5216DW1T1G
MUN5230DW1T1G, SMUN5230DW1T1G
MUN5231DW1T1G, SMUN5231DW1T1G
MUN5232DW1T1G, SMUN5232DW1T1G
MUN5233DW1T1G, SMUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G, SMUN5235DW1T1G
MUN5236DW1T1G
MUN5237DW1T1G, SMUN5237DW1T1G
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k W
Resistor Ratio
MUN5211DW1T1G/SMUN5211DW1T1G/MUN5212DW1T1G/
NSVMUN5212DW1T1G/MUN5213DW1T1G/SMUN5213DW1T1G/
MUN5236DW1T1G
MUN5214DW1T1G/SMUN5214DW1T1G
MUN5215DW1T1G/MUN5216DW1T1G/SMUN5216DW1T1G
MUN5230DW/SMUN5230DW/MUN5231DW/SMUN5231DW
MUN5232DW1T1G/SMUN5232DW1T1G
MUN5233DW1T1G/SMUN5233DW1T1G
MUN5234DW1T1G
MUN5235DW1T1G/SMUN5235DW1T1G
MUN5237DW1T1G/SMUN5237DW1T1G
R1/R2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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5
Figure 1. Derating Curve
300
200
150
100
50
0
−50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
RqJA = 833°C/W
250
PD, POWER DISSIPATION (mW)
ALL MUN5211DW1T1G SERIES DEVICES
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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6
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5211DW1T1G, SMUN5211DW1T1G
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
1002030
IC, COLLECTOR CURRENT (mA)
10
1
0.1
TA=-25°C
75°C
25°C
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001 020 4050
IC, COLLECTOR CURRENT (mA)
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
TA=-25°C
25°C
Figure 5. Output Current versus Input Voltage
75°C
25°C
TA=-25°C
100
10
1
0.1
0.01
0.001 01 234
Vin, INPUT VOLTAGE (VOLTS)
56 78 910
Figure 6. Input Voltage versus Output Current
50
010203040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
75°C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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7
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5212DW1T1G, NSVMUN5212DW1T1G
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 7. VCE(sat) versus ICFigure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
101 100
75°C 25°C
100
0
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001 246810
TA=-25°C
0
IC, COLLECTOR CURRENT (mA)
100
TA=-25°C
75°C
10
1
0.1 10 20 30 40 50
25°C
Figure 11. Input Voltage versus Output Current
0.001
TA=-25°C
75°C
25°C
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
020 50
50
0 10 203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC/IB = 10 VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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8
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5213DW1T1G, SMUN5213DW1T1G
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 12. VCE(sat) versus IC
0246810
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
75°C25°C
Figure 13. DC Current Gain
Figure 14. Output Capacitance
100
10
1
0.1
010 203040 50
IC, COLLECTOR CURRENT (mA)
Figure 15. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10 1 100
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 16. Input Voltage versus Output Current
020 40 50
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
25°C
75°C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
TA=-25°C
TA=-25°C
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5214DW1T1G, SMUN5214DW1T1G
10
1
0.1 01020304050
100
10
10246810
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
Figure 18. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10
300
250
200
150
100
50
02468 1520405060708090
f = 1 MHz
lE = 0 V
TA = 25°C
25°C
IC/IB = 10 TA=-25°C
TA=75°C25°C
-25°C
VO = 0.2 V TA=-25°C
75°C
VO = 5 V
25°C
75°C
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215DW1T1G
75°C
25°C
−25°C
Figure 22. VCE(sat) versus ICFigure 23. DC Current Gain
Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 26. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
0.01
0.1
30
VR, REVERSE BIAS VOLTAGE (VOLTS)
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
3525155
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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11
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5216DW1T1G, SMUN5216DW1T1G
75°C
25°C
−25°C
Figure 27. VCE(sat) versus ICFigure 28. DC Current Gain
Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Figure 31. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020
10
0
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
0.01
0.1
30
VR, REVERSE BIAS VOLTAGE (VOLTS)
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
3525155
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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12
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230DW1T1G, SMUN5230DW1T1G
75°C
25°C
−25°C
Figure 32. VCE(sat) versus ICFigure 33. DC Current Gain
Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 36. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
VCE = 10 V
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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13
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5231DW1T1G, SMUN5231DW1T1G
75°C
25°C
−25°C
Figure 37. VCE(sat) versus ICFigure 38. DC Current Gain
Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 41. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
4.5
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
VCE = 10 V
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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14
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232DW1T1G, SMUN5232DW1T1G
75°C
25°C
−25°C
Figure 42. VCE(sat) versus ICFigure 43. DC Current Gain
Figure 44. Output Capacitance Figure 45. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 46. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
45 50403020100
0
Cob, CAPACITANCE (pF)
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
3
100
5
6
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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15
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5233DW1T1G, SMUN5233DW1T1G
75°C
25°C
−25°C
Figure 47. VCE(sat) versus ICFigure 48. DC Current Gain
Figure 49. Output Capacitance Figure 50. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 51. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
302515100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
151050
0.1
1
20 25
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
20
3.5
3
2.5
100
5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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16
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5234DW1T1G
75°C
25°C
−25°C
Figure 52. VCE(sat) versus ICFigure 53. DC Current Gain
Figure 54. Output Capacitance Figure 55. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 56. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
302515100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
Cob, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (mA)
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
0.01
20
100
TBD TBD
TBD
5
IC/IB = 10 VCE = 10 V
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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17
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235DW1T1G, SMUN5235DW1T1G
75°C
25°C
−25°C
Figure 57. VCE(sat) versus ICFigure 58. DC Current Gain
Figure 59. Output Capacitance Figure 60. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 61. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C
25°CTA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
100
4.5
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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18
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5236DW1T1G
75°C
25°C
−25°C
Figure 62. VCE(sat) versus ICFigure 63. DC Current Gain
Figure 64. Output Capacitance Figure 65. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 66. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
100
4.5
5
10
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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19
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5237DW1T1G, SMUN5237DW1T1G
75°C
25°C
−25°C
Figure 67. VCE(sat) versus ICFigure 68. DC Current Gain
Figure 69. Output Capacitance Figure 70. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 71. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
504020100
IC, COLLECTOR CURRENT (mA)
100101
1000
10
1
0.001
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
1.5
45 50403020100
0
Cob, CAPACITANCE (pF)
0.5
1
2
4
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
3020100
0.1
1
40 50
Vin, INPUT VOLTAGE (VOLTS)
75°C
25°C
TA = −25°C
75°C
25°C
TA = −25°C
75°C25°C
TA = −25°C
0.01
3525155
0.01
0.1
30
3.5
3
2.5
100
4.5
5
10
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10 VCE = 10 V
MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series
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20
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
E0.2 (0.008) MM
123
D
e
A1
A
A3
C
L
654
−E−
b6 PL
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
DIM MIN NOM MAX
MILLIMETERS
A0.80 0.95 1.10
A1 0.00 0.05 0.10
A3
b0.10 0.21 0.30
C0.10 0.14 0.25
D1.80 2.00 2.20
0.031 0.037 0.043
0.000 0.002 0.004
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
MIN NOM MAX
INCHES
0.20 REF 0.008 REF
HE
HE
E1.15 1.25 1.35
e0.65 BSC
L0.10 0.20 0.30
2.00 2.10 2.20
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
ǒmm
inchesǓ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
SC−88/SC70−6/SOT−363
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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