MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1GSeries Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1G series, two BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium. SOT-363 CASE 419B STYLE 1 (3) R1 * Simplifies Circuit Design Reduces Board Space Reduces Component Count AEC-Q101 Qualified and PPAP Capable S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (1) R2 Q1 Q2 R2 Features * * * * * (2) (4) R1 (5) (6) MARKING DIAGRAM 6 xx M G G 1 xx = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2012 August, 2012 - Rev. 10 1 Publication Order Number: MUN5211DW1T1/D MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Total Device Dissipation TA = 25C PD Derate above 25C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25C Max Unit 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW mW/C RqJA 670 (Note 1) 490 (Note 2) C/W Symbol Max Unit 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) mW PD Derate above 25C mW/C Thermal Resistance, Junction-to-Ambient RqJA 493 (Note 1) 325 (Note 2) C/W Thermal Resistance, Junction-to-Lead RqJL 188 (Note 1) 208 (Note 2) C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad DEVICE MARKING AND RESISTOR VALUES Package Marking R1 (K) R2 (K) Shipping MUN5211DW1T1G, SMUN5211DW1T1G SOT-363 (Pb-Free) 7A 10 10 3,000 / Tape & Reel MUN5212DW1T1G, NSVMUN5212DW1T1G SOT-363 (Pb-Free) 7B 22 22 3,000 / Tape & Reel MUN5213DW1T1G, SMUN5213DW1T1G SOT-363 (Pb-Free) 7C 47 47 3,000 / Tape & Reel MUN5214DW1T1G, SMUN5214DW1T1G SOT-363 (Pb-Free) 7D 10 47 3,000 / Tape & Reel MUN5215DW1T1G SOT-363 (Pb-Free) 7E 10 3,000 / Tape & Reel MUN5216DW1T1G, SMUN5216DW1T1G SOT-363 (Pb-Free) 7F 4.7 3,000 / Tape & Reel MUN5230DW1T1G, SMUN5230DW1T1G SOT-363 (Pb-Free) 7G 1.0 1.0 3,000 / Tape & Reel MUN5231DW1T1G SMUN5231DW1T1G SOT-363 (Pb-Free) 7H 2.2 2.2 3,000 / Tape & Reel MUN5232DW1T1G, SMUN5232DW1T1G SOT-363 (Pb-Free) 7J 4.7 4.7 3,000 / Tape & Reel MUN5233DW1T1G, SMUN5233DW1T1G SOT-363 (Pb-Free) 7K 4.7 47 3,000 / Tape & Reel MUN5234DW1T1G SOT-363 (Pb-Free) 7L 22 47 3,000 / Tape & Reel MUN5235DW1T1G, SMUN5235DW1T1G SOT-363 (Pb-Free) 7M 2.2 47 3,000 / Tape & Reel MUN5236DW1T1G SOT-363 (Pb-Free) 7N 100 100 3,000 / Tape & Reel MUN5237DW1T1G, SMUN5237DW1T1G SOT-363 (Pb-Free) 7P 47 22 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) Characteristic Symbol Min Typ Max - - 100 - - 500 Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211DW1T1G, SMUN5211DW1T1G MUN5212DW1T1G, NSVMUN5212DW1T1G MUN5213DW1T1G, SMUN5213DW1T1G MUN5214DW1T1G, SMUN5214DW1T1G MUN5215DW1T1G MUN5216DW1T1G, SMUN5216DW1T1G MUN5230DW1T1G, SMUN5230DW1T1G MUN5231DW1T1G, SMUN5231DW1T1G MUN5232DW1T1G, SMUN5232DW1T1G MUN5233DW1T1G, SMUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G, SMUN5235DW1T1G MUN5236DW1T1G MUN5237DW1T1G, SMUN5237DW1T1G IEBO Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 50 - - 50 - - 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 - - - - - - - - - - - - - - Vdc Vdc ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211DW1T1G, SMUN5211DW1T1G MUN5212DW1T1G, NSVMUN5212DW1T1G MUN5213DW1T1G, SMUN5213DW1T1G MUN5214DW1T1G, SMUN5214DW1T1G MUN5215DW1T1G MUN5216DW1T1G, SMUN5216DW1T1G MUN5230DW1T1G, SMUN5230DW1T1G MUN5231DW1T1G, SMUN5231DW1T1G MUN5232DW1T1G, SMUN5232DW1T1G MUN5233DW1T1G, SMUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G, SMUN5235DW1T1G MUN5236DW1T1G MUN5237DW1T1G, SMUN5237DW1T1G hFE Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) MUN5211DW1T1G, SMUN5211DW1T1G MUN5212DW1T1G, NSVMUN5212DW1T1G MUN5213DW1T1G, SMUN5213DW1T1G MUN5214DW1T1G, SMUN5214DW1T1G MUN5235DW1T1G, SMUN5235DW1T1G MUN5236DW1T1G (IC = 10 mA, IB = 5 mA) MUN5230DW1T1G, SMUN5230DW1T1G MUN5231DW1T1G, SMUN5231DW1T1G MUN5237DW1T1G, SMUN5237DW1T1G (IC = 10 mA, IB = 1 mA) MUN5215DW1T1G MUN5216DW1T1G, SMUN5216DW1T1G MUN5232DW1T1G, SMUN5232DW1T1G MUN5233DW1T1G, SMUN5233DW1T1G MUN5234DW1T1G VCE(sat) http://onsemi.com 3 Vdc - - - - - - - - - - - - 0.25 0.25 0.25 0.25 0.25 0.25 - - - - - - 0.25 0.25 0.25 - - - - - - - - - - 0.25 0.25 0.25 0.25 0.25 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 3) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MUN5211DW1T1G, SMUN5211DW1T1G MUN5212DW1T1G, NSVMUN5212DW1T1G MUN5214DW1T1G, SMUN5214DW1T1G MUN5215DW1T1G MUN5216DW1T1G, SMUN5216DW1T1G MUN5230DW1T1G, SMUN5230DW1T1G MUN5231DW1T1G, SMUN5231DW1T1G MUN5232DW1T1G, SMUN5232DW1T1G MUN5233DW1T1G, SMUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G, SMUN5235DW1T1G (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) MUN5213DW1T1G, SMUN5213DW1T1G (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW) MUN5236DW1T1G (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) MUN5237DW1T1G, SMUN5237DW1T1G VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) MUN5211DW1T1G, SMUN5211DW1T1G MUN5212DW1T1G, NSVMUN5212DW1T1G MUN5213DW1T1G, SMUN5213DW1T1G MUN5214DW1T1G, SMUN5214DW1T1G MUN5233DW1T1G, SMUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G, SMUN5235DW1T1G (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MUN5230DW1T1G, SMUN5230DW1T1G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN5215DW1T1G MUN5216DW1T1G, SMUN5216DW1T1G MUN5231DW1T1G, SMUN5231DW1T1G MUN5232DW1T1G, SMUN5232DW1T1G MUN5236DW1T1G MUN5237DW1T1G, SMUN5237DW1T1G VOH Input Resistor MUN5211DW1T1G, SMUN5211DW1T1G MUN5212DW1T1G, NSVMUN5212DW1T1G MUN5213DW1T1G, SMUN5213DW1T1G MUN5214DW1T1G, SMUN5214DW1T1G MUN5215DW1T1G MUN5216DW1T1G, SMUN5216DW1T1G MUN5230DW1T1G, SMUN5230DW1T1G MUN5231DW1T1G, SMUN5231DW1T1G MUN5232DW1T1G, SMUN5232DW1T1G MUN5233DW1T1G, SMUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G, SMUN5235DW1T1G MUN5236DW1T1G MUN5237DW1T1G, SMUN5237DW1T1G R1 Resistor Ratio MUN5211DW1T1G/SMUN5211DW1T1G/MUN5212DW1T1G/ NSVMUN5212DW1T1G/MUN5213DW1T1G/SMUN5213DW1T1G/ MUN5236DW1T1G MUN5214DW1T1G/SMUN5214DW1T1G MUN5215DW1T1G/MUN5216DW1T1G/SMUN5216DW1T1G MUN5230DW/SMUN5230DW/MUN5231DW/SMUN5231DW MUN5232DW1T1G/SMUN5232DW1T1G MUN5233DW1T1G/SMUN5233DW1T1G MUN5234DW1T1G MUN5235DW1T1G/SMUN5235DW1T1G MUN5237DW1T1G/SMUN5237DW1T1G R1/R2 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 4 Vdc - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - - 0.2 - - 0.2 - - 0.2 Vdc 4.9 4.9 4.9 4.9 4.9 4.9 4.9 - - - - - - - - - - - - - - 4.9 - - 4.9 4.9 4.9 4.9 4.9 4.9 - - - - - - - - - - - - 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 0.8 1.0 1.2 0.17 - 0.8 0.21 - 1.0 0.25 - 1.2 0.055 0.38 0.038 1.7 0.1 0.47 0.047 2.1 0.185 0.56 0.056 2.6 kW MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series ALL MUN5211DW1T1G SERIES DEVICES PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 -50 RqJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 5 150 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5211DW1T1G, SMUN5211DW1T1G TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75C 25C -25C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C 75C f = 1 MHz IE = 0 V TA = 25C 1 0.1 0.01 0.001 50 TA=-25C 10 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 6 50 10 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5212DW1T1G, NSVMUN5212DW1T1G IC/IB = 10 25C TA=-25C 0.1 75C 0.01 TA=75C 25C -25C 100 10 0.001 0 20 50 40 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 3 2 1 75C 25C TA=-25C 10 1 0.1 0.01 VO = 5 V 0 0 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 10. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) VCE = 10 V 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 7 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5213DW1T1G, SMUN5213DW1T1G IC/IB = 10 1 25C TA=-25C 75C 0.1 VCE = 10 V TA=75C 25C -25C 100 0.01 0 10 50 20 40 IC, COLLECTOR CURRENT (mA) 10 IC, COLLECTOR CURRENT (mA) 1 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 100 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 0.4 TA=-25C 10 1 0.1 0.01 0.2 0 25C 75C 0.6 0 VO = 5 V 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 Figure 14. Output Capacitance 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 0.8 100 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 8 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5214DW1T1G, SMUN5214DW1T1G 300 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C VCE = 10 250 25C 200 -25C 150 100 50 0 80 2 1 4 6 Figure 17. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25C 3 TA=75C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 10 VO = 5 V 1 50 25C -25C 0 Figure 19. Output Capacitance 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 Figure 20. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 18. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 21. Input Voltage versus Output Current http://onsemi.com 9 50 10 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series 1 1000 IC/IB = 10 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25C 10 1 50 TA = -25C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 4 f = 1 MHz IE = 0 V TA = 25C 3.5 3 2.5 2 1.5 1 0.5 75C 10 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 24. Output Capacitance 25C 1 TA = -25C 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 25C 75C VO = 0.2 V 0.1 0 9 10 Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 23. DC Current Gain 4.5 0 VCE = 10 V 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5215DW1T1G 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 10 50 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series 1 1000 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = -25C 25C 100 10 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC 100 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 29. Output Capacitance 75C 10 25C TA = -25C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 3.5 100 Figure 28. DC Current Gain 4.5 4 VCE = 10 V 75C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5216DW1T1G, SMUN5216DW1T1G 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage versus Output Current http://onsemi.com 11 50 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5230DW1T1G, SMUN5230DW1T1G 75C 0.1 -25C 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 25C TA = -25C VCE = 10 V 1 50 75C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 34. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 75C 1 25C VO = 0.2 V 0.1 0 9 10 Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 4 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 36. Input Voltage versus Output Current http://onsemi.com 12 50 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5231DW1T1G, SMUN5231DW1T1G 75C 0.1 -25C 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) TA = -25C VCE = 10 V 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 37. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 4 f = 1 MHz IE = 0 V TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 39. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 75C 1 25C VO = 0.2 V 0.1 0 9 10 Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 38. DC Current Gain 4.5 0 25C 75C 10 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 41. Input Voltage versus Output Current http://onsemi.com 13 50 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5232DW1T1G, SMUN5232DW1T1G 75C 0.1 -25C 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) TA = -25C 10 1 50 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 5 4 3 2 1 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 44. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 43. DC Current Gain 6 0 25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 46. Input Voltage versus Output Current http://onsemi.com 14 50 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5233DW1T1G, SMUN5233DW1T1G 75C -25C 25C 0.01 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 75C 1 10 IC, COLLECTOR CURRENT (mA) Figure 47. VCE(sat) versus IC f = 1 MHz IE = 0 V TA = 25C 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 49. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 50. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 3 100 Figure 48. DC Current Gain 4 3.5 25C 10 1 30 TA = -25C 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 51. Input Voltage versus Output Current http://onsemi.com 15 25 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 0.1 75C -25C 0.01 0.001 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5234DW1T1G 0 5 25C 10 15 25 20 IC, COLLECTOR CURRENT (mA) 75C 100 1 10 IC, COLLECTOR CURRENT (mA) 100 IC, COLLECTOR CURRENT (mA) Figure 53. DC Current Gain TBD VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 54. Output Capacitance Figure 55. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) Figure 52. VCE(sat) versus IC TBD 25C 10 1 30 TA = -25C TBD IC, COLLECTOR CURRENT (mA) Figure 56. Input Voltage versus Output Current http://onsemi.com 16 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5235DW1T1G, SMUN5235DW1T1G 75C 0.1 -25C 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 57. VCE(sat) versus IC f = 1 MHz IE = 0 V TA = 25C 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 75C 1 TA = -25C 0.1 0.01 0.001 50 25C VO = 5 V 0 Figure 59. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 75C 1 25C TA = -25C VO = 0.2 V 0.1 0 9 10 Figure 60. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 3.5 100 Figure 58. DC Current Gain 4.5 4 25C 10 1 50 TA = -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 61. Input Voltage versus Output Current http://onsemi.com 17 50 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series 1000 1 75C 75C 25C 0.1 0.01 0.001 0 VCE = 10 V -25C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5236DW1T1G 10 20 40 30 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 62. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 4.5 f = 1 MHz IE = 0 V TA = 25C 4 3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 1 25C TA = -25C 0.1 0.01 0.001 50 Figure 64. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 1 25C VO = 0.2 V 0.1 0 9 10 Figure 65. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 63. DC Current Gain 5 0 25C 10 1 50 TA = -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 66. Input Voltage versus Output Current http://onsemi.com 18 50 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 -25C 75C 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5237DW1T1G, SMUN5237DW1T1G 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 67. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 4.5 f = 1 MHz IE = 0 V TA = 25C 4 3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 69. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 1 25C VO = 0.2 V 0.1 0 9 10 Figure 70. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 68. DC Current Gain 5 0 25C 10 1 50 TA = -25C 40 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 71. Input Voltage versus Output Current http://onsemi.com 19 50 MUN5211DW1T1G, SMUN5211DW1T1G, NSVMUN5211DW1T1G Series PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W D e 6 5 4 1 2 3 HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. DIM A A1 A3 b C D E e L HE -E- b 6 PL 0.2 (0.008) M E M INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 A3 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 SOLDERING FOOTPRINT* L 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches SC-88/SC70-6/SOT-363 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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