Parameter Max. Units
VDS Drain- Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ±9.5
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V ±6.0 A
IDM Pulsed Drain Current ±76
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
EAS Single Pulse Avalanche Energy60 mJ
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
11/9/04
IRF7233PbF
HEXFET® Power MOSFET
Parameter Max. Units
RθJA Maximum Junction-to-Ambient50 °C/W
Thermal Resistance
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
VDSS = -12V
RDS(on) = 0.020Ω
Description
Absolute Maximum Ratings
W
www.irf.com 1
lUltra Low On-Resistance
lP-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
lLead-Free
Top View
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
PD - 95939
SO-8
IRF7233PbF
2www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
trr Reverse Recovery Time ––– 43 65 ns TJ = 25°C, IF = -2.5A
Qrr Reverse RecoveryCharge ––– 35 52 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
-76
-2.5
A
When mounted on 1 inch square copper board, t<10 sec
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
S
D
G
Starting TJ = 25°C, L = 1.3mH
RG = 25Ω, IAS = 9.5A.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -14 ––– ––– V VGS = 0V, ID = -5.0mA
V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.001 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.013 0.020 VGS = -4.5V, ID = -9.5A
0.023 0.033 VGS = -2.5V, ID = -6.0A
VGS(th) Gate Threshold Voltage -0.6 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance 3.3 ––– ––– S VDS = -10V, ID = -9.5A
––– ––– -10 VDS = -12V, VGS = 0V
––– ––– -1.0 VDS = -9.6V, VGS = 0V
––– ––– -100 VDS = -12V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V
QgTotal Gate Charge ––– 49 74 ID = -9.5A
Qgs Gate-to-Source Charge ––– 9.3 14 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 22 32 VGS = -5.0V
td(on) Turn-On Delay Time ––– 26 ––– VDD = -10V
trRise Time ––– 540 ––– ID = -9.5A
td(off) Turn-Off Delay Time ––– 77 ––– RD = 1.0Ω
tfFall Time ––– 370 ––– RG = 6.2Ω
Ciss Input Capacitance ––– 4530 6000 VGS = 0V
Coss Output Capacitance ––– 2400 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 2220 ––– ƒ = 1.0kHz
IRF7233PbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0
20
40
60
80
100
0246810
D
DS
20µs PULSE WIDTH
T = 25°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
-1.5V
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
0
20
40
60
80
100
0246810
D
DS
20µs PULSE WIDTH
T = 150°C
A
-I , Drain-to-Source Current (A)
-V , Drain-to-Source Voltage (V)
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1.5V
1
10
100
1.0 1.5 2.0 2.5 3.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , Gate-to-Source Voltage (V)
V = -10V
20µs PULSE WIDTH
DS
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-9.5A
IRF7233PbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
2000
3000
4000
5000
6000
024681012
C, Capacitance (pF)
A
DS
-V , Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
GS
iss gs gd ds
rss gd
oss ds gd
V = 0V, f = 1kHz
C = C + C , C SHORTED
C = C
C = C + C
1
10
100
0.0 1.0 2.0 3.0
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse Drain Current (A)
-V , Source-to-Drain Voltage (V)
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
010 20 30 40 50 60 70
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-9.5A
V =-10V
DS
IRF7233PbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
25 50 75 100 125 150
0
20
40
60
80
100
120
140
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-4.2A
-7.6A
-9.5A
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF7233PbF
6www.irf.com
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 B AS IC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MIL L I ME T E R SINCHES
MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 45°
8X L 8X c
y
0.25 [.010] C A B
e1
A
A1
8X b
C
0.10 [.004]
4312
F OOT PR I NT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I NE CONF OR MS T O J E DE C OU T L I NE MS -0 12 AA.
NOT ES :
1. DIME NS IONING & T OLERANCING PE R AS ME Y14.5M-1994.
2. CONT R OL LING DIMENS ION: MILL IMET ER
3. DIME NS IONS ARE S HOWN IN MILLIMET ERS [INCHES].
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS.
MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010].
7 DIMENSION IS T HE L ENGT H OF LEAD FOR S OLDERING T O
A SUBS T RAT E .
MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006].
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECT IFIER
LOGO
F 7101
Y = LAS T DIGIT OF T HE YE AR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF7101 (MOS FE T)
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
A = AS S E MB L Y S IT E CODE
IRF7233PbF
www.irf.com 7
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
