VP0808L, VP1008L
Vishay Siliconix
Document Number: 70218
S-04279—Rev. D, 16-Jul-01 www.vishay.com
11-1
P-Channel 80- and 100-V (D-S) MOSFETs
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)VGS(th) (V) ID (A)
VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28
VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28
FEATURES BENEFITS APPLICATIONS
DHigh-Side Switching
DLow On-Resistance: 2.5 W
DModerate Threshold: –3.4 V
DFast Switching Speed: 40 ns
DLow Input Capacitance: 75 pF
DEase in Driving Switches
DLow Offset (Error) Voltage
DLow-Voltage Operation
DHigh-Speed Switching
DEasily Driven Without Buffer
DDrivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
DBattery Operated Systems
DPower Supply, Converter Circuits
DMotor Control
“S” VP
1008L
xxyy
“S” VP
0808P
xxyy
1
TO-226AA
(TO-92)
Top View
S
D
G2
3
VP0808L
Device Marking
Front View
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Front View Device Marking
Front View
“S” = Siliconix Logo
xxyy = Date Code
Device Marking
Front View
“S” = Siliconix Logo
xxyy = Date Code
VP1008L
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol VP0808L VP1008L Unit
Drain-Source Voltage VDS –80 –100
Gate-Source Voltage VGS "30 "30 V
Continuous Drain Current TA= 25_C–0.28 –0.28
Continuous Drain Current
(TJ = 150_C) TA= 100_CID–0.17 –0.17 A
Pulsed Drain CurrentaIDM –3 –3
TA= 25_C0.8 0.8
Power Dissipation TA= 100_CPD0.32 0.32 W
Thermal Resistance, Junction-to-Ambient RthJA 156 156 _C/W
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 _C
Notes
a. Pulse width limited by maximum junction temperature.
VP0808L, VP1008L
Vishay Siliconix
www.vishay.com
11-2 Document Number: 70218
S-04279Rev. D, 16-Jul-01
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VP0808L VP1008L
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA110 80 100
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 1 mA 3.4 24.5 24.5 V
VDS = 0 V, VGS = "20 V "100 "100
Gate-Body Leakage IGSS TJ = 125_C"500 "500 nA
VDS = 80 V, VGS = 0 V 10
TJ = 125_C500
m
Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 10 mA
TJ = 125_C500
On-State Drain CurrentbID(on) VDS = 15 V, VGS = –10 V 21.1 1.1 A
bVGS = –10 V, ID = –1 A 2.5 5 5
W
Drain-Source On-ResistancebrDS(on) TJ = 125_C4.4 8 8
W
Forward T ransconductancebgfs VDS = 10 V, ID = 0.5 A 325 200 200
Common Source
Output Conductancebgos VDS = 7.5 V, ID = 0.1 A 0.45 mS
Dynamic
Input Capacitance Ciss 75 150 150
Output Capacitance Coss VDS = 25 V, VGS = 0 V
f = 1 MHz 40 60 60 pF
Reverse Transfer Capacitance Crss
f = 1 MHz 18 25 25
Switchingc
td(on) 11 15 15
T urn-On Time trVDD = 25 V, RL = 47 W
^
30 40 40
td(off) ID ^ 0.5 A, VGEN = 10 V
RG = 25 W20 30 30 ns
Turn-Off Time tf20 30 30
Notes
a. For DESIGN AID ONLY, not subject to production testing.. VPDV10
b. Pulse test: PW v300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
VP0808L, VP1008L
Vishay Siliconix
Document Number: 70218
S-04279Rev. D, 16-Jul-01 www.vishay.com
11-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
20
16
12
8
4
0
3.8 V
00.4 0.8 1.2 1.6 2.0
3.6 V
3.4 V
3.2 V
Ohmic Region Characteristics Output Characteristics for Low Gate Drive
On-Resistance vs. Drain Current Normalized On-Resistance
vs. Junction Temperature
Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage
VGS Gate-Source Voltage (V) VGS Gate-Source Voltage (V)
VDS Drain-to-Source Voltage (V) VDS Drain-to-Source Voltage (V)
ID Drain Current (A)
VGS = 10 V
TJ Junction Temperature (_C)
VGS = 4.0 V
2.0
012345
1.6
1.2
0.8
0.4
0
9 V
8 V
7 V
6 V
5 V
4 V
0.5
0.4
0.3
00210
0.2
0.1
468
125_C
10
8
6
000.5 3.0
4
2
1.0 1.5 2.0 2.5
7
04812 16 20
6
5
4
0
3
2
1
ID= 0.1A
0.5 A 1.0 A
2.00
1.75
0.50 50 10 150
1.50
1.25
30 70 110
1.00
0.75
VGS = 10 V
ID = 0.5 A
VDS = 10 V
VGS = 10 V
25_C
ID Drain Current (A)
ID Drain Current (mA)
ID Drain Current (A)
rDS(on) On-Resistance ( Ω )
rDS(on) Drain-Source On-Resistance ( Ω )
rDS(on) Drain-Source On-Resistance ( Ω )
(Normalized)
VP0808L, VP1008L
Vishay Siliconix
www.vishay.com
11-4 Document Number: 70218
S-04279Rev. D, 16-Jul-01
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
15.0
12.5
10.0
00100 500
7.5
5.0
200 300 400
2.5
80 V
10 K
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1
0.01
0.1
0.01
0.1 1 10010 1 K
10 50 100
100
10
120
200
160
120
0010 50
80
40
20 30 40
10
1
0.01
1.0 1.5 4.5
0.1
2.0 2.5 3.0 3.5 4.0
Threshold Region Capacitance
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Gate Charge Drive Resistance Effects on Switching
Normalized Effective Transient
Thermal Impedance
t1 Square Wave Pulse Duration (sec)
VDS Drain-to-Source Voltage (V)VGS Gate-to-Source Voltage (V)
55_C
Qg Total Gate Charge (pC)
125_C
Crss
Coss
Ciss
VGS = 0 V
f = 1 MHz
ID = 0.5 A
VDS = 50 V
VDD = 25 V
RL = 50 W
VGS = 0 to 10 V
ID = 500 mA
td(on)
td(off)
tr
tf
TJ = 150_C
25_C
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 156_C/W
3. TJM TA = PDMZthJA(t)
t1
t2
t1
Notes:
PDM
t2
VDS = 5 V
RG Gate Resistance (W)
ID Drain Current (mA)
C Capacitance (pF)
VGS Gate-to-Source Voltage (V)
t Switching Time (ns)