VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L -80 5 @ VGS = -10 V -2 to -4.5 -0.28 VP1008L -100 5 @ VGS = -10 V -2 to -4.5 -0.28 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control High-Side Switching Low On-Resistance: 2.5 W Moderate Threshold: -3.4 V Fast Switching Speed: 40 ns Low Input Capacitance: 75 pF Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer TO-226AA (TO-92) S G D 1 VP0808L VP1008L Device Marking Front View Device Marking Front View "S" VP 0808P xxyy "S" VP 1008L xxyy "S" = Siliconix Logo xxyy = Date Code "S" = Siliconix Logo xxyy = Date Code 2 3 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol VP0808L VP1008L Drain-Source Voltage Parameter VDS -80 -100 Gate-Source Voltage VGS "30 "30 -0.28 -0.28 -0.17 -0.17 -3 -3 Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation ID IDM TA= 25_C TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range PD RthJA TJ, Tstg 0.8 0.8 0.32 0.32 156 156 -55 to 150 Unit V A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70218 S-04279--Rev. D, 16-Jul-01 www.vishay.com 11-1 VP0808L, VP1008L Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VP0808L Parameter Test Conditions Typa Min V(BR)DSS VGS = 0 V, ID = -10 mA -110 -80 VGS(th) VDS = VGS, ID = -1 mA -3.4 -2 Symbol Max VP1008L Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage VDS = 0 V, VGS = "20 V Gate-Body Leakage IGSS TJ = 125_C VDS = -80 V, VGS = 0 V IDSS -2 "100 "100 "500 "500 On-State Drain Drain-Source On-Resistanceb ID(on) rDS(on) -10 nA m mA -500 VDS = -15 V, VGS = -10 V -2 VGS = -10 V, ID = -1 A 2.5 5 5 4.4 8 8 TJ = 125_C V -500 VDS = -100 V, VGS = 0 V TJ = 125_C Currentb -4.5 -10 TJ = 125_C Zero Gate Voltage Drain Current -100 -4.5 Forward Transconductanceb gfs VDS = -10 V, ID = -0.5 A 325 Common Source Output Conductanceb gos VDS = -7.5 V, ID = -0.1 A 0.45 -1.1 -1.1 200 A W 200 mS Dynamic Input Capacitance Ciss VDS = -25 V, VGS = 0 V f = 1 MHz 75 150 150 Output Capacitance Coss 40 60 60 Reverse Transfer Capacitance Crss 18 25 25 td(on) 11 15 15 30 40 40 20 30 30 20 30 30 pF Switchingc Turn-On Time Turn-Off Time tr td(off) VDD = -25 V, RL = 47 W ID ^ -0.5 A, VGEN = -10 V RG = 25 W tf Notes a. For DESIGN AID ONLY, not subject to production testing.. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VPDV10 Document Number: 70218 S-04279--Rev. D, 16-Jul-01 VP0808L, VP1008L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics Output Characteristics for Low Gate Drive -2.0 -20 VGS = -10 V VGS = -4.0 V -16 -9 V ID - Drain Current (mA) ID - Drain Current (A) -1.6 -8 V -1.2 -7 V -0.8 -6 V -0.4 -12 -3.8 V -8 -3.6 V -4 -3.4 V -5 V -4 V 0 -3.2 V 0 0 -1 -2 -3 -4 -5 0 -0.4 VDS - Drain-to-Source Voltage (V) -1.2 -1.6 -2.0 VDS - Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage -0.5 7 6 rDS(on) - On-Resistance ( ) 25_C -0.4 ID - Drain Current (A) -0.8 125_C VDS = -10 V -0.3 -0.2 -0.1 I D = -0.1A 5 4 -0.5 A 3 -1.0 A 2 1 0 0 0 -2 -4 -6 -8 0 -10 -8 -12 -16 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 10 -20 2.00 rDS(on) - Drain-Source On-Resistance ( ) (Normalized) rDS(on) - Drain-Source On-Resistance ( ) -4 VGS - Gate-Source Voltage (V) 8 6 4 VGS = -10 V 2 0 1.75 VGS = -10 V ID = -0.5 A 1.50 1.25 1.00 0.75 0.50 0 -0.5 -1.0 -1.5 -2.0 ID - Drain Current (A) Document Number: 70218 S-04279--Rev. D, 16-Jul-01 -2.5 -3.0 -50 -10 30 70 110 150 TJ - Junction Temperature (_C) www.vishay.com 11-3 VP0808L, VP1008L Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance -10 200 VGS = 0 V f = 1 MHz VDS = -5 V TJ = 150_C -1 C - Capacitance (pF) ID - Drain Current (mA) 160 25_C 125_C -55_C -0.1 120 Ciss 80 Coss Crss 40 -0.01 0 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 0 -10 -20 Gate Charge -40 -50 Drive Resistance Effects on Switching -15.0 100 tr ID = -0.5 A -12.5 tf t - Switching Time (ns) VGS - Gate-to-Source Voltage (V) -30 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) -10.0 VDS = -50 V -7.5 -80 V -5.0 td(off) 10 td(on) VDD = -25 V RL = 50 W VGS = 0 to -10 V ID = -500 mA -2.5 0 1 100 0 200 300 400 500 10 20 Qg - Total Gate Charge (pC) 50 100 RG - Gate Resistance (W) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 - Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70218 S-04279--Rev. D, 16-Jul-01