DMA150YC1600NA
Half 3~ Bridge, Common Cathode
Standard Rectifier
3
4
2
1
Part number
DMA150YC1600NA
Backside: isolated
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
SOT-227B (minibloc)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
● Isolation Voltage: V~
3000
RRM
1600
I150
FSM
800
DAV
V=V
A
A
=
=
I
3~
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130128aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DMA150YC1600NA
V = V
kA²s
kA²s
kA²s
kA²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.21
R0.6 K/W
R
min.
150
V
RSM
V
100T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
95
P
tot
165 WT = 25°C
C
RK/W
50
1600
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.68
T = 25°C
VJ
150
V
F0
V0.82T = °C
VJ
150
r
F
6.3 mΩ
V1.15T = °C
VJ
I = A
F
V
50
1.75
I = A
F
150
I = A
F
150
threshold voltage
slope resistance for power loss calculation only
µA
125
V
RRM
V1600
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
25
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
150
800
865
2.31
2.25
A
A
A
A
680
735
3.20
3.12
1600
DAV
d =rectangular ⅓
bridge output current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1700
0.10
IXYS reserves the right to change limits, conditions and dimensions. 20130128aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DMA150YC1600NA
Ratings
abcdZyyww
XXXXX
Product Marking
Logo Part No.
DateCode Assembly Code
Assembly Line
®
D
M
A
150
YC
1600
NA
Part number
Diode
Standard Rectifier
(up to 1800V)
Half 3~ Bridge, Common Cathode
SOT-227B (minibloc)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
VJ
°C
M
D
Nm1.5
mounting torque 1.1
T
stg
°C150
storage temperature -40
Weight g30
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
M
T
Nm1.5
terminal torque 1.1
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
10.5 3.2
8.6 6.8
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 150 A
per terminal
150-40
terminal to terminal
SOT-227B
(
minibloc
)
Similar Part Package Voltage class
DMA150YA1600NA SOT-227B (minibloc) 1600
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
DMA150YC1600NA 509174Tube 10DMA150YC1600NAStandard
2500
3000
ISOL
threshold voltage V0.82
mΩ
V
0 max
R
0 max
slope resistance * 4.4
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130128aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DMA150YC1600NA
3
4
2
1
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions. 20130128aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DMA150YC1600NA
0.001 0.01 0.1 1
300
400
500
600
700
23456789011
10
2
10
3
10
4
0.5 1.0 1.5 2.0
0
50
100
150
200
0 10203040506070
0
20
40
60
80
100
1 10 100 1000 10000
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 25 50 75 100 125 150 175
0
50
100
150
I
F
[A]
V
F
[V]
I
FSM
[A]
t[s]
I
2
t
[A
2
s]
t[ms]
P
tot
[W]
I
F(AV)M
T]A[
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
t[ms]
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.017 0.01
2 0.013 0.00001
3 0.010 0.01
4 0.04 0.04
5 0.12 0.3
0 25 50 75 100 125 150 175
50 Hz, 80%V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
T
VJ
= 45°C
V
R
= 0 V
T
VJ
=150°C
R
thHA
=
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
=25°C
DC =
1
0.5
0.4
0.33
0.17
0.08
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130128aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
