DMA150YC1600NA 3~ Rectifier Standard Rectifier VRRM = 1600 V I DAV = 150 A I FSM = 800 A Half 3~ Bridge, Common Cathode Part number DMA150YC1600NA Backside: isolated 1 3 2 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130128a DMA150YC1600NA Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 V IR reverse current VR = 1600 V TVJ = 25C 100 A VR = 1600 V TVJ = 150C 1.5 mA TVJ = 25C 1.21 V 1.68 V 1.15 V VF IF = forward voltage drop min. 50 A typ. I F = 150 A IF = TVJ = 125 C 50 A I F = 150 A TC = 95C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved V 150 A TVJ = 150 C 0.82 V d= for power loss calculation only Ptot 1.75 T VJ = 150 C 6.3 m 0.6 K/W K/W 0.10 TC = 25C 165 W t = 10 ms; (50 Hz), sine TVJ = 45C 800 A t = 8,3 ms; (60 Hz), sine VR = 0 V 865 A t = 10 ms; (50 Hz), sine TVJ = 150 C 680 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 735 t = 10 ms; (50 Hz), sine TVJ = 45C 3.20 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 3.12 kAs TVJ = 150 C 2.31 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 2.25 kAs 25 pF 20130128a DMA150YC1600NA Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 150 Unit A -40 150 C -40 150 C Weight 30 MD mounting torque MT terminal torque d Spp/App VISOL t = 1 minute D M A 150 YC 1600 NA XXXXX (R) abcd Assembly Line DateCode Ordering Standard Part Number DMA150YC1600NA Equivalent Circuits for Simulation V0 R0 terminal to backside 8.6 6.8 mm 3000 V 2500 V = = = = = = = Diode Standard Rectifier (up to 1800V) Current Rating [A] Half 3~ Bridge, Common Cathode Reverse Voltage [V] SOT-227B (minibloc) Marking on Product DMA150YC1600NA Package SOT-227B (minibloc) * on die level Delivery Mode Tube Quantity 10 Code No. 509174 Voltage class 1600 T VJ = 150 C Rectifier V 0 max threshold voltage 0.82 V R 0 max slope resistance * 4.4 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Nm mm Assembly Code Similar Part DMA150YA1600NA I 1.5 Part number Part No. Zyyww 1.1 Nm 3.2 50/60 Hz, RMS; IISOL 1 mA Product Marking Logo 1.5 10.5 t = 1 second isolation voltage 1.1 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g Data according to IEC 60747and per semiconductor unless otherwise specified 20130128a DMA150YC1600NA Outlines SOT-227B (minibloc) 1 3 2 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130128a DMA150YC1600NA Rectifier 200 700 150 600 104 50 Hz, 80%VRRM VR = 0 V TVJ = 45C IFSM IF 100 2 It TVJ = 45C 500 [A] [A] 50 0 0.5 1.0 1.5 2 [A s] TVJ = 150C 400 TVJ = 150C TVJ = 125C TVJ = 25C 102 300 0.001 2.0 TVJ = 150C 103 VF [V] Fig. 1 Forward current versus voltage drop per diode 0.01 0.1 1 1 t [s] Fig. 2 Surge overload current 2 3 4 5 6 7 8 910 t [ms] 2 Fig. 3 I t versus time per diode 150 100 RthHA = 0.2 K/W 0.4 K/W 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 80 Ptot60 DC = 1 0.5 0.4 0.33 0.17 0.08 100 IF(AV)M [W]40 [A] 50 20 0 0 0 10 20 30 40 50 60 70 0 25 50 IF(AV)M [A] 75 100 125 150 175 0 25 50 75 100 125 150 175 TC [C] Tamb [C] Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 5 Max. forward current versus case temperature 0.7 0.6 0.5 Constants for ZthJC calculation: ZthJC i 0.4 Rthi (K/W) ti (s) [K/W] 1 0.017 0.01 0.3 2 0.013 0.00001 3 0.010 0.01 4 0.04 0.04 5 0.12 0.3 0.2 0.1 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130128a