Semiconductor Group 1 Sep-12-1996
BSP 88
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• V
GS(th) = 0.6...1.2V
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Type
V
DS
I
D
R
DS(on) Package Marking
BSP 88 240 V 0.32 A 8 ΩSOT-223 BSP 88
Type Ordering Code Tape and Reel Information
BSP 88 Q67000-S070 E6327
Maximum Ratings
Parameter Symbol Values Unit
Drain source voltage
V
DS 240 V
Drain-gate voltage
R
GS = 20 kΩ
V
DGR 240
Gate source voltage
V
GS ± 14
Gate-source peak voltage,aperiodic
V
gs ± 20
Continuous drain current
T
A = 25 °C
I
D 0.32 A
DC drain current, pulsed
T
A = 25 °C
I
Dpuls 1.28
Power dissipation
T
A = 25 °C
P
tot 1.7 W
Semiconductor Group 2 Sep-12-1996
BSP 88
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature
T
j -55 ... + 150 °C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip to ambient air
R
thJA ≤ 72 K/W
Therminal resistance, junction-soldering point 1)
R
thJS ≤ 12
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA,
T
j = 25 °C
V
(BR)DSS 240 - - V
Gate threshold voltage
V
GS=
V
DS,
I
D = 1 mA
V
GS(th) 0.6 0.8 1.2
Zero gate voltage drain current
V
DS = 240 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = 240 V,
V
GS = 0 V,
T
j = 125 °C
V
DS = 100 V,
V
GS = 0 V,
T
j = 25 °C
I
DSS
-
-
-
-
10
0.1
100
100
1 µA
nA
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS - 10 100 nA
Drain-Source on-state resistance
V
GS = 4.5 V,
I
D = 0.32 A
V
GS = 2.8 V,
I
D = 14 mA
R
DS(on)
-
- 6
4 15
8 Ω
Semiconductor Group 3 Sep-12-1996
BSP 88
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS≥ 2 *
I
D *
R
DS(on)max,
I
D = 0.32 A
g
fs 0.14 0.34 - S
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
iss - 80 110 pF
Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
oss - 15 25
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
rss - 8 12
Turn-on delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.28 A
R
GS = 50 Ω
t
d(on)
- 5 8
ns
Rise time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.28 A
R
GS = 50 Ω
t
r
- 10 15
Turn-off delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.28 A
R
GS = 50 Ω
t
d(off)
- 30 40
Fall time
V
DD = 30 V,
V
GS = 10 V,
I
D = 0.28 A
R
GS = 50 Ω
t
f
- 25 35
Semiconductor Group 4 Sep-12-1996
BSP 88
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A = 25 °C
I
S- - 0.32 A
Inverse diode direct current,pulsed
T
A = 25 °C
I
SM - - 1.28
Inverse diode forward voltage
V
GS = 0 V,
I
F = 0.5 A,
T
j = 25 °C
V
SD - 1.05 1.3 V
Semiconductor Group 5 Sep-12-1996
BSP 88
Power dissipation
P
tot = ƒ(
T
A)
020 40 60 80 100 120 °C 160
T
A
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
W
2.0
P
tot
Drain current
I
D = ƒ(
T
A)
parameter:
V
GS ≥ 4 V
020 40 60 80 100 120 °C 160
T
A
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
A
0.34
I
D
Safe operating area
I
D=f(
V
DS)
parameter :
D
= 0,
T
C=25°C Transient thermal impedance
Z
th JA = ƒ(
t
p)
parameter:
D = t
p /
T
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
Z
thJC
10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 6 Sep-12-1996
BSP 88
Typ. output characteristics
I
D = ƒ(
V
DS)
parameter:
t
p = 80 µs ,
T
j = 25 °C
01234567V9
V
DS
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
0.60
0.65
A
0.75
I
D
V
GS [V]
a
a 1.5
b
b 2.0
c
c 2.5
d
d 3.0
e
e 3.5
f
f 4.0
g
g 4.5
h
h 5.0
i
i 6.0
j
j 7.0
k
k 8.0
l
P
tot = 2W
l 10.0
Typ. drain-source on-resistance
R
DS (on) = ƒ(
I
D)
parameter:
t
p = 80 µs,
T
j = 25 °C
0.00 0.10 0.20 0.30 0.40 0.50 A 0.65
I
D
0
2
4
6
8
10
12
14
16
18
20
22
Ω
26
R
DS (on)
V
GS [V] =
a
a
1.5
b
b
2.0
c
c
2.5
d
d
3.0
e
e
3.5
f
f
4.0
g
g
4.5
h
h
5.0
i
i
6.0
j
j
7.0
k
k
8.0
l
l
10.0
Typ. transfer characteristics
I
D
= f
(
V
GS)
parameter:
t
p = 80 µs
012345678V10
V
GS
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
A
1.3
I
D
Typ. forward transconductance
g
fs =
f
(
I
D)
parameter:
t
p = 80 µs,
0.0 0.2 0.4 0.6 0.8 A 1.1
I
D
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
S
0.55
g
fs
7 Sep-12-1996
Semiconductor Group
BSP 88
Drain-source on-resistance
R
DS (on) = ƒ(
T
j)
parameter:
I
D = 0.32 A,
V
GS = 4.5 V
-60 -20 20 60 100 °C 160
T
j
0
2
4
6
8
10
12
14
16
Ω
20
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th) = ƒ(
T
j)
parameter:
V
GS =
V
DS,
I
D = 1 mA
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
V
2.6
V
GS(th)
-60 -20 20 60 100 °C 160
T
j
2%
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS=0V,
f
= 1 MHz
0 5 10 15 20 25 30 V 40
V
DS
0
10
1
10
2
10
3
10
pF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
I
F = ƒ(
V
SD)
parameter:
T
j
, t
p = 80 µs
-2
10
-1
10
0
10
1
10
A
I
F
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)
Semiconductor Group 8 Sep-12-1996
BSP 88
Drain-source breakdown voltage
V
(BR)DSS = ƒ(
T
j)
-60 -20 20 60 100 °C 160
T
j
215
220
225
230
235
240
245
250
255
260
265
270
275
V
285
V
(BR)DSS
Safe operating area
I
D=f(
V
DS)
parameter :
D
= 0.01,
T
C=25°C
Semiconductor Group 9 Sep-12-1996
BSP 88
Package outlines
SOT-223
Dimensions in mm
