BSP 88 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * VGS(th) = 0.6...1.2V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 88 240 V 0.32 A 8 SOT-223 BSP 88 Type BSP 88 Ordering Code Q67000-S070 D Tape and Reel Information E6327 Maximum Ratings Parameter Symbol Drain source voltage VDS VDGR Drain-gate voltage RGS = 20 k Values 240 V 240 Gate source voltage VGS 14 Gate-source peak voltage,aperiodic Vgs 20 Continuous drain current ID TA = 25 C A 0.32 IDpuls DC drain current, pulsed TA = 25 C 1.28 Ptot Power dissipation TA = 25 C Semiconductor Group Unit W 1.7 1 Sep-12-1996 BSP 88 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air RthJA 72 Therminal resistance, junction-soldering point 1) RthJS 12 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C V 240 - - 0.6 0.8 1.2 VDS = 240 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 240 V, VGS = 0 V, Tj = 125 C - 10 100 VDS = 100 V, VGS = 0 V, Tj = 25 C - - 100 Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 RDS(on) - 4 8 VGS = 2.8 V, ID = 14 mA - 6 15 2 nA nA VGS = 4.5 V, ID = 0.32 A Semiconductor Group A Sep-12-1996 BSP 88 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 0.32 A Input capacitance 0.14 pF - 80 110 - 15 25 - 8 12 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 0.34 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Rise time - 5 8 - 10 15 - 30 40 - 25 35 tr VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.28 A RGS = 50 Semiconductor Group 3 Sep-12-1996 BSP 88 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 C Inverse diode direct current,pulsed - 0.32 - - 1.28 VSD VGS = 0 V, IF = 0.5 A, Tj = 25 C Semiconductor Group - ISM TA = 25 C Inverse diode forward voltage A V - 4 1.05 1.3 Sep-12-1996 BSP 88 Power dissipation Ptot = (TA) Ptot Drain current ID = (TA) parameter: VGS 4 V 2.0 0.34 W A 1.6 ID 0.28 1.4 0.24 1.2 0.20 1.0 0.16 0.8 0.12 0.6 0.08 0.4 0.04 0.2 0.0 0.00 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 TA 120 C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = (tp) parameter: D = tp / T parameter : D = 0, TC=25C 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 88 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 0.75 26 Ptot = 2W k i lj hgf A 0.65 ID Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C a b c d e 22 VGS [V] a 1.5 0.60 d b 2.0 c 2.5 d 3.0 0.45 e 3.5 0.40 f 4.0 g 4.5 h 5.0 0.30 i 6.0 0.25 j 7.0 0.55 0.50 c 0.35 b 0.20 k 8.0 l 10.0 RDS (on) 20 18 16 14 12 10 8 e 6 0.15 4 0.10 a 2 0.05 0.00 0 f igk hj l VGS [V] = a 1.5 b 2.0 c 2.5 d 3.0 e f 3.5 4.0 0.20 0.30 g 4.5 h i 5.0 6.0 j 7.0 k l 8.0 10.0 0 1 2 3 4 5 6 7 V 9 0.00 0.10 0.40 0.50 VDS A 0.65 ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, 1.3 0.55 A S 1.1 ID gfs 1.0 0.45 0.40 0.9 0.35 0.8 0.7 0.30 0.6 0.25 0.5 0.20 0.4 0.15 0.3 0.10 0.2 0.05 0.1 0.0 0.00 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0.0 0.2 0.4 0.6 0.8 A ID 1.1 Sep-12-1996 BSP 88 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 0.32 A, VGS = 4.5 V Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 20 2.6 V 2.2 RDS (on) 16 VGS(th) 2.0 14 1.8 12 1.6 1.4 98% 10 98% 1.2 8 1.0 6 0.8 typ typ 2% 0.6 4 0.4 2 0.2 0 0.0 -60 -20 20 60 100 C 160 -60 -20 20 60 100 C Tj 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 10 1 pF A C IF 10 2 10 0 Ciss Coss 10 1 10 -1 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 Sep-12-1996 BSP 88 Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = (Tj ) parameter : D = 0.01, TC=25C 285 V 275 V(BR)DSS270 265 260 255 250 245 240 235 230 225 220 215 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 Sep-12-1996 BSP 88 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996